NEC 28 PIN Search Results

2SC3660A

Abstract: nec 2sc3660A diode gp 426 2SC3660 NEM060C69-28 NEM080C69-28 NEM080CC9-28 NEM080CM-28 4a7m1 J11J
Contextual Info: NEC/ CALIFORNIA SbE D b427414 0002550 NEC CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR 7 44 « N E C C NEM060C69-28 NEM080C69-28 OUTLINE DIMENSIONS FEATURES Units in mm O U TLIN E 69 • HIGH P O W E R A N D H IGH GAIN: Vcc = 28 V, C lass A B N EM 080C69-28: Po = 49.6 dBm, G p = 5.6 dB (TYP)

Contextual Info: NEC NEC Electronics Inc. ;iPB100484 4,096 X 4-Bit 100K ECL RAM Description Pin Configurations The /tPB100484 is a very high-speed 100K interface ECL RAM organized as 4,096 words by 4 bits with openemitter outputs noninverted . It is available in 28-pin cerdip or flatpack packages.

container

Abstract: NEC Electronics thickness Tube 01A
Contextual Info: TUBE CONTAINER 2.9 6.9 UNIT : mm 20.4 MM450-01A, LB-067 Length : 495±2.0 Thickness : 1.0+− 0.3 0.2 Tolerance : ±0.4 Material : Plastic with antistatic finish Applied Package 28-pin Plastic SOP Quantity (pcs) MAX. 25 SSD-A-H5215-2 NEC Electronics Corporation 2007

28-pin

Abstract: h6411
Contextual Info: TUBE CONTAINER 2.9 6.0 UNIT : mm 20.0 MM450-03A Length : 495±2.0 Thickness : 0.8+− 0.3 0.2 Tolerance : ±0.4 Material : Plastic with antistatic finish Applied Package Quantity (pcs) 24-pin Plastic SOP MAX. 30 28-pin Plastic SOP MAX. 25 SSD-A-H6411-1 NEC Electronics Corporation 2007

TSOP package tray

Abstract: TRAY DIMENSIONS TSOP 62 Package TSOP TRAY tray tsop 1220 JEDEC tray standard tsop
Contextual Info: TRAY CONTAINER UNIT : mm HEAT PROOF 7 12.20 18.80 A' 20.42 14.56 285.88 315.0 322.6 SECTION A-A' 18.80 5.62 (6.35) 15.00 7.62 135.9 PPE NEC 135°C MAX 13.67 13.27 TSOP(2)400MIL18 109.36 9x15=135 A Applied Package Quantity (pcs) 28-pin Plastic TSOP (II)

TSOP package tray

Abstract: JEDEC TRAY DIMENSIONS tsop 28 PIN tray JEDEC tray standard tsop TSOP I SSD-A-H7033-1
Contextual Info: TRAY CONTAINER 119.9 HEAT PROOF 7 135° CMAX PPE A' 8.15 10.90 8.00 A NEC TSOP 1 8x13.4 12×18=216 17.20 11.30 13.74 292.4 315.0 (322.6) SECTION A – A' 13.74 5.62 (6.35) 10.00 7.62 135.9 UNIT : mm Applied Package 28-pin Plastic TSOP (I) (8×13.4) 32-pin Plastic TSOP (I) (8×13.4)

k246

Abstract: DC to AC inverter 2N3904 2N3906 K2463 SM02 lcd inverter 28 pins lcd inverter 7 pin LCD inverter circuit erg ccfl
Contextual Info: K2463 Specifications and Applications Information 8m Class 2 Lamp DC to AC Inverter 12/28/10 8m Class The ERG K2463 8m Class low profile dc to ac inverter is specifically designed to power the NEC NL6448BC20-14 LCD display module to a moderate brightness level from a +5 volt dc source.

NAT7210APD

Abstract: NAT7210 NEC uPD7210 NAT4882 PD7210
Contextual Info: Drop-In Replacement Chip for NEC µPD7210 Controller NAT7210 T/R1 T/R2 CLK RESET T/R3 DRQ DACK CS RD WR INT D0 D1 D2 D3 D4 D5 D6 D7 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 NAT7210APD Features 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24

NAT7210

Abstract: NEC uPD7210 NAT7210APD NAT4882 PD7210 NEC 24 pin uP
Contextual Info: Drop-In Replacemet Chip for NEC µPD7210 Controller NAT7210 NAT7210 Overview T/R1 T/R2 CLK RESET T/R3 DRQ DACK CS RD WR INT D0 D1 D2 D3 D4 D5 D6 D7 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23

2SC3286

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3286-M NPN SILICON EPITAXIAL TRANSISTOR FOR 230-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in millimeters * High gain and high power output at 230 MHz 2 Pout = 140 W @ Vcc = 28 V, Pin = 10 W, class AB

nec 16312

Abstract: ha 13463 SN 16880 8377 om 7082 B ic audio amplifier sn 7456 nec 8039 TRANSISTOR C 5706 9522 transistor fr 3709
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (U nit: mm) Low noise NF = 1 .3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz

TFL0816-2N7

Abstract: diode gp 429 TFL0816-1N0 Marking g3b
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2134TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin

nec 14312 transistor

Abstract: tag 9040 tag 8538 TM 5503 tag 8504 nec 6681 TAG 8743 tag 14472 8504 nec
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION The juPA836TF has tw o different built-irvtransistors (Q1 and Q 2) for low noise amplification in the VHF band to UHF

7082 B ic audio amplifier

Abstract: SN 16880 14 pin ic 4027 TRANSISTOR NPN 16085 TRANSISTOR SN 532-3 NEC 4570 IC 7487 transistor lc 7822 n transistor 9527 IC AT 6884
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAG E DRAWINGS (U nit: mm) FEATURES • Low noise and high gain •

sem 5025

Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
Contextual Info: PRELIMINARY DATA SHEET S ilico n T ransistor juPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1

Contextual Info: User’s Manual µPD750008 4-bit Single-Chip Microcontrollers µPD750004 µPD750006 µPD750008 µPD75P0016 Document No. U10740EJ2V1UM00 2nd edition Date Published April 2003 N CP (K) c Printed in Japan GENERAL 1 PIN FUNCTIONS 2 FEATURES OF THE ARCHITECTURE AND MEMORY MAP

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD FEATURES • PACKAGE DRAWINGS (Unit: mm) Low noise NF = 1.3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz

GR-468-CORE

Abstract: NX7312UA NX7313UA NX7314UA NX7315UA STM-16
Contextual Info: DATA SHEET LASER DIODE NX7315UA 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE TOSA DESCRIPTION The NX7315UA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP

transistor sr 13009

Abstract: sr 13009 transistor d 13009 UPA831TF transistors W 5753 1997N apa831 ic 5219 8mm on 5297 transistor
Contextual Info: PRELIMINARY DATA SH EET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ,uPA831TF has tw o different built-in transistors (Q1 and Q2) for tow noise am plification in the VHF band to UHF

sem 5025

Abstract: NEC JAPAN 2415 on 5297 transistor transistor d 13009 9622 transistor LA 7687 a La 7833 la 7687 t 3866
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /¿PA821TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 THIN-TYPE SMALL MINI MOLD The //PA821TF has 2 built-in low-voltage transistors which are PACKAGE DRAWINGS (Unit: mm)

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

rd4.7sl

Abstract: RD5.1SL RD5.1SL(0)-T1-A RD10SL RD11SL RD12SL RD13SL RD15SL RD16SL RD18SL
Contextual Info: DATA SHEET ZENER DIODES RD4.7SL to RD39SL ZENER DIODES 200 mW 2 PIN SUPER MINI MOLD DESCRIPTION Mold Package zener diodes possessing an allowable power dissipation of 200 mW featuring low noise and sharp breakdown characteristic. They are intended for use in audio

ic 5219 8mm

Abstract: TRANSISTOR 2sC 6090 transistor 2sc 4977 2sc 1364 transistor 2sc 6090 13009 power transistor IC 4017 B ic 4069 pin configuration IC 4069 14 PIN 832t
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION The /iP A 832T F has two different built-in transistors (Q1 2 . 10* 0.1 and Q2) for low noise amplification in the VHF band to UHF

Contextual Info: r ZENER DIODES r RD4.7FM to RD51FM ZENER DIODES 1 W 2 PIN POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD4.7FM to RD51FM Series are 2 PIN Power M ini M old Unit: mm Package zener diodes possessing allowable pow er dissipation o f 1 W. QUALITY GRADE