NE651R479A Search Results

NE6510179A

Abstract: NE650103M NE651R479A
Contextual Info: NEC Discrete Power Devices www.cel.com GaAs Driver Devices Typical Specifications @ TC = 25°C Power & Gain Frequency Linear Range P1dB POUT PIN Gain GHz (dBm) (dBm) (dBm) (dB) Part Number NE651R479A 0.8 to 3.7 — NE6510179A 0.8 to 3.7 — NE650103M 0.8 to 2.7

Contextual Info: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm

Contextual Info: Preliminary Data Sheet 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA,

k 2134 nec

Abstract: NEC k 2134
Contextual Info: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm

NEC k 2134

Contextual Info: 0.4 W L & S-BAND POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, PIN = +13 dBm POUT = +27 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, PIN = +15 dBm

ATC 1084

Abstract: GRM40C0G 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A
Contextual Info: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

Contextual Info: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS

IC 3140

Abstract: transistor NEC D 882 p ATC 1084 nec d 882 p 901 704 16 08 55 nec d 882 p datasheet 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-T1
Contextual Info: 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS

nec d 882 p

Abstract: 100A5R1CP150X IMT-2000 NE651R479A NE651R479A-A NE651R479A-T1-A nec 1251
Contextual Info: NEC's 1 W, L&S-BAND NE651R479A Medium POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

NE6510179A

Abstract: NE6510379A NE651R479A NE651R479A-T1
Contextual Info: DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power CW with high linear

Contextual Info: NONLINEAR MODEL NE651R479A DRAIN SCHEMATIC Ldpkg L=0.001 nH Ld L=0.55 nH GATE Lspkg L=0.001 nH Q1 Cdspkg C=0.1 pF Lg L=1.45 nH Cdspkg C=0.1 pF Lspkg L=0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 1.0 VTO 0.9255 RG VTOSC RD 0.2

IC 3140

Abstract: 6822 FET NEC k 2134 ic atc 1084
Contextual Info: NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transm itter applications for mobile communication systems. It is capable of delivering 0.4 watt of output power CW with high linear gain, high

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of