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    NE3520 Search Results

    NE3520 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE3520S03-A
    		Renesas Electronics RF FETs, Discrete Semiconductor Products, FET RF HFET 20GHZ 2V 10MA S03 Original PDF 10
    NE3520S03-T1C-A
    		Renesas Electronics RF FETs, Discrete Semiconductor Products, FET RF HFET 20GHZ 2V 10MA S03 Original PDF 10
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    NE3520 Price and Stock

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    California Eastern Laboratories (CEL) NE3520S03-A

    RF MOSFET GAAS HJ-FET 2V S03
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    DigiKey NE3520S03-A Bulk
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    California Eastern Laboratories (CEL) NE3520S03-T1C-A

    RF MOSFET GAAS HJ-FET 2V S03
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    LUMEL SA EA19N E35200000008

    Ammeter; on panel; I AC: 0÷2kA; 40÷72Hz; Length: 97mm; EA19; 96x96mm
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    TME EA19N E35200000008 1
    • 1 $30.82
    • 10 $28.62
    • 100 $28.62
    • 1000 $28.62
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    LUMEL SA EA19N E35200000005

    Ammeter; on panel; I AC: 0÷2kA; 40÷72Hz; Length: 97mm; EA19; 96x96mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME EA19N E35200000005 1
    • 1 $45.74
    • 10 $42.47
    • 100 $42.47
    • 1000 $42.47
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    LUMEL SA EA19N E35200000000

    Ammeter; on panel; I AC: 0÷2kA; 40÷72Hz; Length: 97mm; EA19; 96x96mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME EA19N E35200000000 1
    • 1 $30.82
    • 10 $28.62
    • 100 $28.62
    • 1000 $28.62
    • 10000 $28.62
    		Get Quote
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    NE3520 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE3520S03

    Abstract: nE352
    Contextual Info: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package


    Original     		NE3520S03 R09DS0029EJ0100 NE3520S03-T1C NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A NE3520S03 nE352 PDF

    ne3520

    Abstract: nE352 hjfet
    Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA


    Original     		NE3520S03 R09DS0029EJ0100 NE3520S03-T1C NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A ne3520 nE352 hjfet PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 PDF