NE32684AS Search Results

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOT RECOM MENDED FOR NEW DESIGN NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 GHz

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz HGH ASSOCIATED GAIN: n 1 .5 dB Typical at 12 GHz _ CO T> La s 0.20 pm, Wa = 200 im

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOT RECOMMENDED FOR NEW DESIGN FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I d s = 10m A VERY LOW NOISE FIGURE: 0.5 dB typical at 12 G H z HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 G H z

NE32684A

Abstract: NE32684AS NE32684A-T1
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOT RECOMMENDED FOR NEW DESIGN NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz 24 1.2 µm, WG = 200 µm • LG = 0.20 µ • LOW COST METAL CERAMIC PACKAGE