NE 22 MOSFET Search Results

10X1000

Abstract: MMT10B230T3
Contextual Info: Order this publication as PBTSPD150A/D Motorola Semiconductor Components Discrete, Analog and Logic Devices 22-Feb-1999 tion c e t Pro ckage e g r a e Su SMB P r o M s nt 50% e Mou ne Line ac Pho r Surf o F Introduction Motorola’s new MMT10BXXX series are high voltage, bi-directional

11W60C3

Contextual Info: PowerMOSFET OUTLI NE FP11W60C3 Uni tmm Package I TO3P 5.5 15 ロット記号 （例） Date code 600V11A 22 管理番号 （例） Control No. 品名 Type No. 0000 11W60C3 Feat ur e 18.0 LowRON Fas tSwi t chi ng I s ol at edPackage ① ② ①: G ②:D ③: S

Contextual Info: PowerMOSFET OUTLI NE FP20W60C3 Uni tmm Package I TO3P 5.5 15 ロット記号 （例） Date code 600V20A 22 管理番号 （例） Control No. 品名 Type No. 0000 P20W60C3 Feat ur e 18.0 LowRON Fas tSwi t chi ng I s ol at edPackage ① ② ①: G ②:D ③: S

p20w60

Abstract: P20W60C3 P20W
Contextual Info: PowerMOSFET •外観図 FP20W60C3 OUTLI NE Package：I TO3P 5.5 15 ロット記号 （例） Date code 600V20A t ：mm Uni 煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ 22 管理番号 （例） Control No. 特 長 品名 Type No. 0000

11W60C3

Abstract: 11w60 s01z
Contextual Info: PowerMOSFET •外観図 FP11W60C3 OUTLI NE Package：I TO3P 5.5 15 ロット記号 （例） Date code 600V11A t ：mm Uni 煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ 22 管理番号 （例） Control No. 特 長 品名 Type No. 0000

11W60C3

Abstract: 11w60
Contextual Info: PowerMOSFET •外観図 FP11W60C3 OUTLI NE Package：I TO3P 5.5 15 ロット記号 （例） Date code 600V11A t ：mm Uni 煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ 22 管理番号 （例） Control No. 特 長 品名 Type No. 0000

p20w60

Contextual Info: PowerMOSFET •外観図 FP20W60C3 OUTLI NE Package：I TO3P 5.5 15 ロット記号 （例） Date code 600V20A t ：mm Uni 煙低オン抵抗 煙高速スイッチング 煙絶縁タイプ 22 管理番号 （例） Control No. 特 長 品名 Type No. 0000

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply • Package

Contextual Info: FS4422-DS-13_EN NOV 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet FS4422 Single N-Channel Enhancement Mode Power MOSFET FS4422 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

ne 22 mosfet

Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)

ne 22 mosfet

Abstract: solar inverter solar inverter circuit mosfet Vds 50 Vgsth
Contextual Info: FMM 65-015P ID25 = 65 A = 150 V VDSS Ω RDSon typ. = 12 mΩ Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM 3 Preliminary data 5 T1 4 1 1 T2 2 si gn 5 MOSFET T1/T2 Features Conditions Maximum Ratings VDSS TVJ = 25°C to TVJmax VGS TC = 25°C TC = 90°C

k3995

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs 2SK3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive

Contextual Info: DMC2990UDJ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary NE EW A DNVEAWN C I NP FR OO RD MUAC T TI O N A D V A NPCREO IDNUFCOTR M A T I O N Device Q1 Q2 RDS ON max V(BR)DSS 20V -20V • • • • • • • • • •

Contextual Info: STB22NE03L N - CHANNEL 30V - 0.034£2 - 22A TO-263 _ STripFET POWER MOSFET P R ELIM IN ARY DATA TYPE STB22N E03L V dss RDS on Id 30 V < 0 .0 5 Q. 22 A . . . . . TYPICAL R D S (on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

NEM0899F06-30

Abstract: J294 J29-4
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES PACKAGE DRAWING Unit: mm • High output, high gain, high efficiency Po = 100 W, GL = 12 dB, KD = 50 %

TR40-10

Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Contextual Info: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance

CA3080T

Abstract: ed 3b diod a 3140 12 diod full wave bridge rectifier ic BA 10B FULL WAVE RECTIFIER a3140 CA3130 ica ca3130 ca 3140a a3140 equivalent
Contextual Info: CA3140, CA3140A Semiconductor September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational am plifiers that com bine the advantages of high voltage PM O S transistors with high voltage bipolar transistors on a single

GA3140

Abstract: PIN DIAGRAM OF IC CA3140 ca3140s 10vpp triangle wave generator CA3140E Wien Bridge Oscillator CA3140T ca3140 application circuit CA3140A baxandall
Contextual Info: h a r r is S E M I C O N D U C T O R C A 3 1 4 0 ,C A 3 1 4 0 A J 4 .5 M H z, B iM O S O p e ra tio n a l A m p lifie r w ith M O S F E T In p u t/B ip o la r O u tp u t November 1996 Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational ampli­

FZH 191

Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
Contextual Info: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine

pin diagram of IC ca3130

Abstract: about the IC ca3130 IC CA3130 application CA3130 CA3130 BIMOS OP AMP IC CA3130T CA3130A equivalent ics of ca3130t equivalent ic of ca3130 Astable Multivibrator operation amplifier
Contextual Info: CA3130, CA3130A Semiconductor September 1998 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output File Number 817.4 Features • M O S F E T Input Stage P rovides: C A 3 13 0A and C A 3 13 0 are op am ps th a t com b in e the - Very High Z, = 1.5 T £i 1.5 x 10 1 2 £i (Typ)

k408

Contextual Info: _ SÌ6562DQ Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET lü U U im M y K V o s *vj N -Ch an n el R D8(ON> P I Id (A) 0.030 @ V GS = 4.5 V ± 4.5 0.040 V GS = 2.5 V ± 3.9 20 P-C ha n ne i 0.050 @ V Gs = -4 .5 V ± 3.5

Contextual Info: CA3140, CA3140A h a r ® J S E M I C O N D U C T O R • M M ■ 4 .5 MHz, BiMOS Operational Amplifier November 1996 with M OSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational ampli­

SiC714CD10

Contextual Info: SiC714CD10 Vishay Siliconix Fast Switching MOSFETs With Integrated Driver FEATURES PRODUCT SUMMARY Input Voltage Range 3.3 to 15 V Output Voltage Range 0.5 to 6 V Operating Frequency 100 kHz to 1 MHz Continuous Output Current Up to 27 A Peak Efficiency > 94 % at 300 kHz

SiC714CD10

Contextual Info: SiC714CD10 Vishay Siliconix Fast Switching MOSFETs With Integrated Driver FEATURES PRODUCT SUMMARY Input Voltage Range 3.3 to 15 V Output Voltage Range 0.5 to 6 V Operating Frequency 100 kHz to 1 MHz Continuous Output Current Up to 27 A Peak Efficiency > 94 % at 300 kHz