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    Chemi-Con EKZE500ELL471MK20S

    Aluminum Electrolytic Capacitors - Radial Leaded 50volts 470uF 12.5X20
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    TTI EKZE500ELL471MK20S Bulk 37,200 100
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    Vishay Intertechnologies CRCW060366R5FKEA

    Thick Film Resistors - SMD 1/8 Watt 66.5ohms 1%
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    TTI CRCW060366R5FKEA Reel 30,000 5,000
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    Amphenol Corporation 91-578852-35M

    Circular MIL Spec Connector CTV 13C 13#22D PIN PLUG
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    TTI 91-578852-35M Each 6 1
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    Vishay Intertechnologies VY1101K31Y5SQ63V0

    Safety Capacitors 100pF X760 Y500VAC 10% Y5S
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    TTI VY1101K31Y5SQ63V0 Bulk 10,000
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    YAGEO Corporation RE1206FRE07100KL

    Thick Film Resistors - SMD 100 kOhms 250 mW 1206 1%
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    TTI RE1206FRE07100KL Reel 35,000
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    K3995 Datasheets Context Search

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    k3995

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs K3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


    Original     		2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995 PDF

    k3995

    Abstract: 2sk3995 k399
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs K3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


    Original     		2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995 2sk3995 k399 PDF

    k3995

    Abstract: 2SK3995
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs K3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Features  Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


    Original     		2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995 2SK3995 PDF

    k3995

    Abstract: 2sk3995 k399 TO-220C-G1
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power er MOSFETs K3995 Silicon N-channel enhancement MOSFET For high speed switching circuits For PDP • Package  Medium breakdown voltag: VDSS = 200 V, ID = 30 A  Low ON resistance, optimum for PDP panel drive


    Original     		2002/95/EC) 2SK3995 O-220C-G1 K3995 k3995 2sk3995 k399 TO-220C-G1 PDF