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Catalog Datasheet	Type	Document Tags	PDF
S9430 Abstract: IRF 810 Contextual Info: February 1996 N NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These • -5.3A, -20V. R ^ , = 0.06Q @ Væ = -10V. ■ High density cell design for extremely low R,'DS ON P-Channel enhancement mode power field effect	OCR Scan	NDS9430 NDS943Q S9430 IRF 810	PDF

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S9430

Abstract: IRF 810
Contextual Info: February 1996 N NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These • -5.3A, -20V. R ^ , = 0.06Q @ Væ = -10V. ■ High density cell design for extremely low R,'DS ON P-Channel enhancement mode power field effect

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NDS9430 NDS943Q S9430 IRF 810

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