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    DNDA

    Contextual Info: 1.0 m Process Family: XDH10 Modular 1.0μm 650V Trench Insulated BCD Process DESCRIPTION XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		xdh10dnda PDF

    nd65d

    Abstract: nd35b nd65c PMOS XDH10
    Contextual Info: 1.0 µm BCD Process XDH10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 650V Trench Insulated BCD Process Thick SOI material together with area efficient deep trench insulation allows the design of plenty of silicon islands separated by dielectrical insulation deep enough to construct vertical devices up to 650V.


    Original     		xdh10nd65dnd35bnd65c+1pmos PDF

    "X-Fab" Core cell library

    Abstract: nd65d RM3 transistors XDH10 analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b
    Contextual Info: 1.0 µm BCD Process XDH10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 650V Trench Insulated BCD Process Description XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		xdh10x-fab" core cell librarynd65drm3 transistors+6analog devices transistor tutorialspnp transistor 650vmos rm3 data20 phb zenermos rm3nd35b PDF