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    ND32A Price and Stock

    Molex

    Molex DND32A-M002

    |Molex DND32A-M002
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    Newark DND32A-M002 Bulk 4
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    • 100 $43.80
    • 1000 $42.83
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    Molex DND32A-M005

    Mic 5P M/Mfe 0.5M St/90; |Molex DND32A-M005
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    Newark DND32A-M005 Bulk 4
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    • 100 $40.31
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    Molex DND32A-M050

    |Molex DND32A-M050
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    Newark DND32A-M050 Bulk 4
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    • 100 $80.73
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    Molex DND32A-M004

    |Molex DND32A-M004
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    Newark DND32A-M004 Bulk 4
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    • 10 $51.89
    • 100 $43.03
    • 1000 $42.08
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    Molex DND32A-M025

    |Molex DND32A-M025
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    Newark DND32A-M025 Bulk 4
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    • 100 $65.43
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    TME DND32A-M025 76 2
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    • 100 $51.88
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    ND32A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    zener diode phc

    Abstract: zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15
    Contextual Info: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		xdm10zener diode phczener phc 12zener diode phc 10+7zener ph-czener diode phc 16zener diode phc 24zener ph-c 15zener diode phc 12nd25dzener diode phc 15 PDF

    zener diode phc 24

    Abstract: 350v ZENER DIODE -20/zener diode phc 24
    Contextual Info: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description Key Features XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		xdm10zener diode phc 24350v zener diode-20/zener diode phc 24 PDF

    XDM10

    Abstract: ND32A "X-Fab" nd25c
    Contextual Info: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Thick SOI material together with area efficient deep trench insulation allows the design of plenty of silicon islands separated by dielectrical insulation deep enough to construct vertical devices up to 350V.


    Original     		xdm10nd32ax-fabnd25c PDF