ND TRANSISTOR Search Results

740L6000

Abstract: H11L1QT 740L6010 H11L1QT-ND H11L2QT-ND QT OPTOELECTRONICS CLA114CT-ND OPTOCOUPLER 8-PIN isocom cla103-nd HCPL2631QT-ND
Contextual Info: Optoisolators SCR & Triac Output Optoisolators A Isolation Voltage Max. IF Trigger Min. Blocking Voltage Iout mA A 660 14mA 400V 300 4N40IS-ND B B B 5300 5300 5300 30mA 15mA 10mA 250V 250V 250V 100 100 100 MOC3009QT-ND MOC3010QT-ND MOC3011QT-ND B B B B B

marking w4s

Abstract: marking code transistor ND D 756 transistor MARKING HRA transistor wc
Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage a nd extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of N P N transistors a nd F E T s from

IRFF320R

Abstract: IRFF323R IRFF321R IRFF322R
Contextual Info: Rugged Power MOSFETs_ IRFF320R, IRFF321R, IRFF322R, IRFF323R File Number 2028 Avalanche Energy Rated N-Channel Power MOSFETs 2-OA a nd 2.5A, 350V -400V ros on = 1 .8 0 a nd 2 .5 0 N-CHANNEL ENHANCEMENT MODE D Feature«: • ■ ■ ■

MC68302

Abstract: MC68000 MC68302RC20 2C65T motorola memory scm
Contextual Info: Ke lv in I nd. E s t a t e . E a s t Kilbride , S c ot la nd. G 7 5 0 TG . EKB Applications Power Measurements on the MC68302 Document ID: Document Location: Author s : Version #: Date: Power Measurements on the MC68302 EKB Datacomms Server / Product Info / MC68302 Info / Power

D4081BC

Abstract: 4081bc 4081B cd4081bcd 4073B CD4081B CD4082S
Contextual Info: HARRIS CMOS AND Gates High-Voltage Types 2 0 -V o lt Rating CD4073B Triple 3-Input A ND Gate CD4081B Quad 2-Input A ND Gate CD4082B Dual 4-Input A N D Gate • C D 4073B , CD 4081B and CD4 0 8 2 6 A N D gates provide the system de­ signer with direct implementation of the

PM5360

Abstract: 63A52 PMC-2020735 0719h 0837H BC 459 3627AM 1602h* lcd BCD 548 BC 558 EQUIVALENT BC 309
Contextual Info: 6: 27 AM S/UNI MULTI-48 ASSP Telecom Standard Product Data Sheet Released em be r, 20 11 08 :3 PM5360 Mo nd ay ,2 8N ov S/UNI® MULTI-48 nd ar es an of IH S on Multi-rate SATURN® User Network Interface for 1x2488, 4x622, and 4x155 Released Issue No. 5: September 2003

Contextual Info: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0 .H Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BF840 Collector-base voltage open emitter

Contextual Info: SANYO S EM ICO ND UCT OR CORP 2SC3986 2041 - N PN Planar Silicon Darlington Transistor Driver Applications • ; 2220A Use . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain . Large current capacity and wide ASO

MV-S100649-00

Abstract: Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111
Contextual Info: 7v u3 M 1z AR zf VE nu LL a-e CO 468 NF 1d ID ge EN * M 7v TI ar u3 AL ve M 1z , U ll S AR zf ND em VE nu ER ic LL a-e NDond CO 468 A# uc NF 1d 02 tor, ID ge EN * M 13 In 03 c. TI ar AL ve , U ll S ND em ER ic NDond A# uc 02 tor, 13 In 03 c. MARVELL CONFIDENTIAL

BFS98

Abstract: ZTX452 ZTX750 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX453
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE

ZTX301

Abstract: BC557P BFS60 BFS98 ZTX108 BC546P BC556P BFS61 MPSA06 MPSA56
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE

BFS98

Abstract: ZTX313 ZTX109 ZTX302 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE

BF840

Abstract: BF841
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF840 BF841 SILICON PLANAR TRANSISTORS N–P–N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF840 BF841 SILICON PLANAR TRANSISTORS N–P–N transisto rs Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: SAMSU NG S E M I C O ND U C T O R INC MMBT2222 14E D | T'Ibm ME 00072S3 1 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS T,=25°C C haracteristic CoBector-Base Voltage Codec tor-Emltter Voltage Emitter-Base Voltage

hsk 103

Abstract: 55163 RFT Transistoren service-mitteilungen GER-A RFT HMK 100 aiwa RFT Service Mitteilung GC 6131 RFT A 210 K
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RU ND FU NK UND FERNSEH EN radio -television Ausgabe Seite 198? 1-8 Mitteilung aus dem VBB Elektronische Bauelemente Teltow Neu im Angebot des Handels Phonogerät LT - CS 01 - Vollautomatischer Tangential-Plattenspieler

PMBT2369

Contextual Info: PMBT2369 _ J\ _ SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N tra ns is tor in a plastic S OT- 23 pa ckage inte nd ed f o r high speed sw itc h in g applications. Q UICK REFERENCE DATA Collector-base voltage open e m it te r

L4938N

Abstract: L4*8n L4938NPD L4938ND PSO20 SO20
Contextual Info: L4938N/ND L4938NPD  DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . STANDBYOUTPUT VOLTAGEPRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE

Contextual Info: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: 3625 3626 \nd POWER HALL SENSOR/DRIVER FOR RRUSHLESS DC MOTORS Requiring a minimum of external components, the UDN3625M and UDN3626M are monolithic ICs that provide single-chip control and direct drive solutions for many small, single-phase, unipolar brushless

L4938N

Abstract: L4938ND L4938NPD PSO20 SO20
Contextual Info: L4938N/ND L4938NPD DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . PRELIMINARY DATA STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE

relay ras 1210

Abstract: tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R IRFD212R IRFD213R 03a s4
Contextual Info: Rugged Pow er M O SFETs File Num ber 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V rDS o n = 1 .5 0 a nd 2 .4 0 N-CHANNEL ENHANCEMENT MODE

L4938N

Abstract: L4938ND L4938NPD PSO20 SO20
Contextual Info: L4938N/ND L4938NPD DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . PRELIMINARY DATA STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE

L4938N

Abstract: L4938NPD L4938ND PSO20 SO20
Contextual Info: L4938N/ND L4938NPD DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE