ND SOT323 Search Results

61GICT-ND

Abstract: SMCJ188A-E3 1N6290AGOS-ND 1N6295AGOS-ND SMAJ12A-E3 TVS SMBJ5.0CA smbj3v3-e3 smcj33a-e3 SMCJ15CA smcj24a-e3
Contextual Info: Transient Voltage Suppressors 1500 Watt Mosorb TVS Breakdown Voltage VBR Min. Nom. Max. VRWM Minimum V (Cont.) IR @ Tape and Reel VRWM Digi-Key Pricing Digi-Key Pricing (µA) Part No. 1 10 100 250 Part No. 1,500 40.9 43 45.2 36.8 5 1N6286AGOS-ND◊ .77

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

ND SOT-323

Contextual Info: BAT54W SERIES SURFACE MOUNT SCHOTTKY BARRIER VOLTAGE 30 Volts CURRENT 0.2 Amperes FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection. • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . Halogen Free

sot323 diode marking 38w

Abstract: MARKING 38W PRODUCT MARKING CODE 38W
Contextual Info: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

Transistor C1173

Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
Contextual Info: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

oriole lcd datasheet

Abstract: ODM16216-9SL 26 pin male FRC connector FRC 14 PIN Male connector ecg manual ic moving message LED display schematic smd 5VOLT AUDIO AMPLIFIER IC 16 x 32 led matrix pc based moving message display using lcd ECG ic manual
Contextual Info: USER MANUAL STM32 Based LED Matrix Display Demo Introduction This user manual describes the operation of STM32 based LED Matrix Display Demo board. This board demonstrates the capability of STP16DP05 LED driver to drive the matrix LED panel. The complete system includes one master board, one slave board and LED Matrix

Contextual Info: DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES 120-250 Volts POWER 200mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. FEATURES • Fast switching speed. 0.087(2.20) 0.070(1.80) • Surface mount package Ideally Suited for Automatic insertion 0.087(2.20)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.087(2.20) 0.070(1.80) • Collector current I C = 200mA

ND SOT-323

Contextual Info: DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES VOLTAGE 120-250 Volts POWER SOT-323 200mWatts Unit: inch mm FEATURES .087(2.2) .070(1.8) • Electrically Identical to Standard JEDEC .054(1.35) .045(1.15) • High Conductance .087(2.2) .078(2.0) • Surface mount package Ideally Suited for Automatic insertion

Contextual Info: DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES VOLTAGE 120-250 Volts POWER SOT-323 200mWatts Unit: inch mm FEATURES .087(2.2) .070(1.8) • Electrically Identical to Standard JEDEC .054(1.35) .045(1.15) • High Conductance .087(2.2) .078(2.0) • Surface mount package Ideally Suited for Automatic insertion

ND SOT-323

Abstract: BAS21W BAS19W RA SOT323 BAS19W PANJIT
Contextual Info: DATA SHEET BAS19W~BAS21W SOT-323 SURFACE MOUNT SWITCHING DIODES POWER 200mWatts FEATURES .087 2.2 .070(1.8) • Fast switching speed. .087(2.2) .078(2.0) 120-250 Volts .004(.10)MIN. VOLTAGE Unit: inch (mm) .054(1.35) .045(1.15) • Surface mount package Ideally Suited for Automatic insertion

ND SOT-323

Contextual Info: DATA SHEET BAS19W~BAS21W SURFACE MOUNT SWITCHING DIODES 120-250 Volts POWER SOT-323 200mWatts Unit：inch mm 0.004(0.10)MIN. FEATURES • Fast switching speed. 0.087(2.20) 0.070(1.80) • Surface mount package Ideally Suited for Automatic insertion 0.087(2.20)

c828 npn transistor datasheet

Abstract: FS800R06KE3 c828 npn 09HVD6B-EMGF-NR TOKO CERAMIC FILTER a50 c828 TRANSISTOR equivalent c828 transistor diode in40 gp WMV smd transistor c828 transistor datasheet
Contextual Info: HybridPACK Hybrid Kit for HybridPACK™2 Evaluation Kit for Applications with HybridPACK™2 Module Application Note V2.2, 2010-03 System Engineering Edition 2010-03 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

marking code 46B

Abstract: BC847CW PAN JIT
Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS CURRENT 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.

BFG87

Abstract: BSF17 BSF17W Philips BFQ bipolar transistor blt81 driver circuit BGY46B BFE505 T119 Transistor BFQ43 bgy132
Contextual Info: Philips Sem iconductors Selection guide Selection list GENERAL For further information, refer to Data Handbook SC08a “R F Bipolar transistors", to Data Handbook SC09 “R F Power Modules”and to Data Handbook SC14 “R F Wideband Transistors, Video Transistors and Modules"

k72 wn

Abstract: k72 diode 2N7002KW
Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

K72 marking diode

Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • Advanced Trench Process Technology 0.087(2.20) 0.070(1.80) • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

Contextual Info: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

sot323 diode marking 38w

Contextual Info: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

M2A transistor

Contextual Info: MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit：inch mm • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V 0.087(2.20) 0.070(1.80) • Collector current IC = 600mA • / 

PRODUCT MARKING CODE 38W

Contextual Info: BSS138W 50V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@2.5V,IDS@100mA=6Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance

zxsc310

Abstract: transistor c310 samwha capacitor GENERIC CAPACITOR ZHCS750 ZHCS500 ZXSC310E5 BAT54 C310 FMMT618
Contextual Info: ZXSC310 LED DRIVER SOLUTION FOR LCD BACKLIGHTING DEVICE DESCRIPTION The ZXSC310 is a single or multi cell LED driver designed for LCD backlighting applications. The input voltage range of the device is between 0.8V and 8V. This means the ZXSC310 is compatible with single