NCP5208DR2 Search Results

N5208

Contextual Info: NCP5208 DDR- I/II Termination Regulator The NCP5208 is a linear regulator specifically designed for the active termination of DDR- I/II SDRAM. The device can be operated from a single supply voltage as low as 1.7 V. For DDR- I applications, the device is capable of sourcing and sinking current up

1500w audio amplifier circuit

Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
Contextual Info: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies

N5208

Abstract: A114 A115 JESD22 JESD78 NCP5208 NCP5208DR2
Contextual Info: NCP5208 DDR−I/II Termination Regulator The NCP5208 is a linear regulator specifically designed for the active termination of DDR−I/II SDRAM. The device can be operated from a single supply voltage as low as 1.7 V. For DDR−I applications, the device is capable of sourcing and sinking current up

Contextual Info: NCP5208 DDR−I/II Termination Regulator The NCP5208 is a linear regulator specifically designed for the active termination of DDR−I/II SDRAM. The device can be operated from a single supply voltage as low as 1.7 V. For DDR−I applications, the device is capable of sourcing and sinking current up

N5208

Contextual Info: NCP5208 DDR−I/II Termination Regulator The NCP5208 is a linear regulator specifically designed for the active termination of DDR−I/II SDRAM. The device can be operated from a single supply voltage as low as 1.7 V. For DDR−I applications, the device is capable of sourcing and sinking current up

N5208

Abstract: A114 JESD22 NCP5208 NCP5208DR2 NCP5208DR2G APE New Power MOSFETs
Contextual Info: NCP5208 DDR−I/II Termination Regulator The NCP5208 is a linear regulator specifically designed for the active termination of DDR−I/II SDRAM. The device can be operated from a single supply voltage as low as 1.7 V. For DDR−I applications, the device is capable of sourcing and sinking current up

CS5170

Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Contextual Info: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .