NC MARKING TRANSISTOR Search Results
NC MARKING TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
NC MARKING TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP A6 A7 CE\ CE2 NC NC WEH\ WEL\ CE2\ VCC VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A8 A9 FEATURES MARKING -8 -9 -10 A10 NC NC VCCQ VSSQ NC |
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as5ss256k18as5ss256k18dq-8/it-40oc-55oc+1 | |
PSOP-20
Abstract: CS8361 CS8361YDPS7 CS8361YDPSR7 CS8361YDWF16 CS8361YDWFR16
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cs8361r14525cs8361/dpsop-20+4 | |
CS8361
Abstract: CS8361YDPS7 CS8361YDPSR7 CS8361YDWF16 CS8361YDWFR16 mst 518 5- pin smd IC 775
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cs8361r14525cs8361/dcs8361ydps7+5 | |
431 smdContextual Info: Back CS8361 5.0 V Dual Micropower Low Dropout Regulator with ENABLE and RESET SO–16L DW SUFFIX CASE 751G 16 1 D2PAK 7–PIN DPS SUFFIX CASE 936H 1 7 PIN CONNECTIONS AND MARKING DIAGRAM 1 VIN NC VTRK GND GND Adj NC ENABLE CS8361 Features • 2 Regulated Outputs |
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cs8361100mar14525cs8361/d+1 | |
automotive microprocessorContextual Info: CS8361 5.0 V Dual Micropower Low Dropout Regulator with ENABLE and RESET SO−16L DW SUFFIX CASE 751G D2PAK−7 DPS SUFFIX CASE 936H PIN CONNECTIONS AND MARKING DIAGRAM VIN NC 1 VTRK GND GND Adj NC ENABLE CS8361 Features • 2 Regulated Outputs − Standby Output 5.0 V ± 2%; 100 mA |
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cs8361so-16lautomotive microprocessor | |
smart ups 750 circuit
Abstract: 100 20L A1 diode PSOP-20 CS8361YDPSR7 CS8361YDWF16 CS8361YDWFR16 CS8361 CS8361YDPS7 d2pak-7
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cs8361so-16lcs8361/dsmart ups 750 circuit+7 | |
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Contextual Info: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0 .H Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BF840 Collector-base voltage open emitter |
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bf840bf841 | |
BF840
Abstract: BF841
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ot-23bf840bf841c-120 | |
transistor smd marking ND
Abstract: BF840 BF840 data sheet SMD IC MARKING NC BF841 SOT23 marking 828
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ot-23bf840bf841c-120+4 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF840 BF841 SILICON PLANAR TRANSISTORS N–P–N transisto rs Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration |
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ot-23bf840bf841c-120 | |
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Contextual Info: MC34280 Power Supply & Management IC for Handheld Electronic Products FEATURES: http://onsemi.com 32−LEAD LQFP FTB SUFFIX CASE 873A MARKING DIAGRAM MC34280F TB AWLYYWW 32 PIN CONNECTIONS • • • • • • • VMAIN VMAINSW VMAINGND NC LIBAOUT LIBATIN |
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mc34280mc34280/d | |
DRCF114YContextual Info: DRCF114Y Tentative Total pages page DRCF114Y Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NC Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open) |
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drcf114y | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package ■ Features • Code SMini3-F2 • Marking Symbol: 3S |
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2002/95/ec2sc4805g | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462G • Package ■ Features • Code SSMini3-F3 • Marking Symbol: Y |
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2002/95/ec2sd2216g2sb1462g | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3936G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: K • Pin Name |
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2002/95/ec2sc3936g | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C |
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2002/95/ec2sd2413g | |
2SD2413GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C |
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2002/95/ec2sd2413g | |
2SD1511GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: P ■ Absolute Maximum Ratings Ta = 25°C |
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2002/95/ec2sd1511g | |
BF840
Abstract: BF841 transistors marking ND transistors C 828
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bf840bf84133c14transistors marking nd+1 | |
2SD2460
Abstract: 2SD24
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2sd24602sd24 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplification • Package Code SSSMini3-F2 Marking Symbol: E M Di ain sc te on na tin nc ue e/ d Features Absolute Maximum Ratings Ta = 25°C |
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2002/95/ec2sa2164 | |
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Contextual Info: BF840 BF841 SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.09 0.48 1 0.38 1 1 3 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 I 2.4 I1 . |
OCR Scan |
bf840bf841 | |
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Contextual Info: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T |
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t35l6432a100-pint35l6432a-5qt35l6432a-5t | |
T35L6432AContextual Info: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T |
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t35l6432a100-pint35l6432a-5qt35l6432a-5t+1 | |