NARROW PULSE WIDTH CIRCUIT Search Results

Contextual Info: NJM2257 SYNCHRONOUS SEPARATOR WITH AFC GENERAL DESCRIPTION The NJM2257 excutes Horizontal and Vertical synchronous signal separation, and odd / even field signal detection, from composit video signals. Built-in 1 / 2 fH Killer Function circuit can make stabilization of the

SP705

Abstract: SP706 SP707 SP708 SP813L
Contextual Info: SP705-708/813L/813M Low Power Microprocessor Supervisory Circuits • Precision Voltage Monitor: SP705/707/813L at 4.65V SP706/708/813M at 4.40V ■ RESET Pulse Width - 200ms ■ Independent Watchdog Timer - 1.6s Timeout SP705/706/813L/813M ■ 60µA Maximum Supply Current

SP705

Abstract: SP706 SP707 SP708 SP813L 8 pin narrow soic 813M
Contextual Info: SP705-708/813L/813M Low Power Microprocessor Supervisory Circuits • Precision Voltage Monitor: SP705/707/813L at 4.65V SP706/708/813M at 4.40V ■ RESET Pulse Width - 200ms ■ Independent Watchdog Timer - 1.6s Timeout SP705/706/813L/813M ■ 60µA Maximum Supply Current

SP707

Abstract: sp813m SP813L SP705 SP706 SP708 TIMER IC 8-PIN DIP
Contextual Info: SP705-708/813L/813M Low Power Microprocessor Supervisory Circuits • Precision Voltage Monitor: SP705/707/813L at 4.65V SP706/708/813M at 4.40V ■ RESET Pulse Width - 200ms ■ Independent Watchdog Timer - 1.6s Timeout SP705/706/813L/813M ■ 60µA Maximum Supply Current

in9145

Abstract: sawtooth NE5561 application sawtooth IN914 sawtooth generator AN124 NE556-1 ne5561 an124
Contextual Info: INTEGRATED CIRCUITS AN124 External synchronization for the NE5561/5568 1988 Dec Philips Semiconductors Philips Semiconductors Application note External synchronization for the NE5561/5568 A drawback to this approach is that when the 5.6V threshold is reached, a discharge transistor is turned on to quickly pull the timing

RF POWER TRANSISTOR

Abstract: T1P3002028-SP transistor jc 817
Contextual Info: T1P3002028-SP 20 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 20watts across

transistor 746

Contextual Info: T1P3003028-SP 30 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 30watts across

pHEMT transistor 360

Abstract: "RF Power Transistor" T1P3005028-SP
Contextual Info: T1P3005028-SP 50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3005028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 50watts across

SP705

Abstract: SP706 SP707 SP708 SP813L SP705CN sp813m
Contextual Info: SP705-708/813L Low Power Microprocessor Supervisory Circuits • Precision Voltage Monitor: SP705/707/813L at 4.65V SP706/708 at 4.40V ■ RESET Pulse Width - 200ms ■ Independent Watchdog Timer - 1.6s Timeout SP705/706/813L ■ 60µA Maximum Supply Current

whip antenna

Abstract: RF MODULE CIRCUIT DIAGRAM 434 mhz CDP-TX-04S-R 470M CDP-TX-02 CDP-TX-04S RF pcb antenna 434 RF receiver 434 Mhz antenna 434 long range fm transmitter
Contextual Info: OPERATION GUIDE UHF narrow band radio data module CDP-TX-04S-R 434 MHz /869 MHz Operation Guide Version 1.0 Apr. 2006 CIRCUIT DESIGN, INC., 7557-1 Hotaka, Azumino, Nagano 399-8303 JAPAN Tel: + +81-(0)263-82-1024 Fax: + +81-(0)263-82-1016 e-mail: info@circuitdesign.jp

CDP-TX-04S-R

Abstract: CDP-TX-02 RF pcb antenna 434 old fm radio diagram antenna for RF modules 434 MHz ANT-LEA-01 RF receiver 434 Mhz CDP-TX02
Contextual Info: OPERATION GUIDE UHF narrow band radio data module CDP-TX-04S-R 434 MHz /869 MHz Difference between RS4408919 old and RS133769 (new) is: RoHS version - no significant changes to spec. Operation Guide Version 1.0 (Apr. 2006) CIRCUIT DESIGN, INC., 7557-1 Hotaka, Azumino,

lm556 application notes

Abstract: LM556 LM556* pulse width modulation 556 timer astable multivibrator 556 Dual on off Timer ramp generator 555 LM556* application notes lm556 Applications 555 timer propagation delay 556 astable
Contextual Info: LM556 Dual Timer General Description Features The LM556 Dual timing circuit is a highly stable controller capable of producing accurate time delays or oscillation. The 556 is a dual 555. Timing is provided by an external resistor and capacitor for each timing function. The two timers operate independently of each other sharing only VCC and

TA8814N

Abstract: VR10 V20C-V20A amp 9v
Contextual Info: TOSHIBA TA8814N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8814N COLOR TRANSIENT IMPROVOR IC FOR TV The TA8814N is an integrated circuit having the following two functions in the shrink DIP 20 pin package the CTI Color Transient Improvor function to improve

simple FM receiver CIRCUIT DIAGRAM and specification

Abstract: RADIO RECEIVER IC UHF circuit diagram of rf transmitter and receiver long distance CDP-RX-03AS RADIO fm RECEIVER IC UHF circuit diagram for simple receiver circuit diagram for simple RF transmitter 868mhz RF MODULE 434Mhz, fsk PCB antenna 868MHZ
Contextual Info: CDP-RX-03AS CDP-RX-03AS UHF FM-NARROW BAND RADIO DATA RECEIVER Operation Guide Version 2.1 Nov. 2001 CIRCUIT DESIGN, INC., International Business Division 7557-1 Hotaka, Hotaka-machi, Minamiazumi, Nagano 399-8303. JAPAN Tel: + +(0263)-82-1024 Fax: + +(0263)-82-1016

74HC

Abstract: 74LS M14A MM74HC164 MM74HC164M MM74HC164MTC MM74HC164MTCX MM74HC164MX MM74HC164N MTC14
Contextual Info: Revised January 2005 MM74HC164 8-Bit Serial-in/Parallel-out Shift Register General Description Features The MM74HC164 utilizes advanced silicon-gate CMOS technology. It has the high noise immunity and low consumption of standard CMOS integrated circuits. It also

X691A

Contextual Info: 19-0094; Rev 4; 3/94 M icroprocessor Supervisory Circuits _ A p p licatio n s _F e a tu re s ♦ 200ms Power OK/Reset Timeout Period ♦ 1jiA Standby Current, 30 xA Operating Current ♦ On-Board Gating of Chip-Enable Signals,

AN-90

Abstract: M16A MM74C174 MM74C174M MM74C174N MS-001 N16E
Contextual Info: Revised January 1999 MM74C174 Hex D-Type Flip-Flop General Description Features The MM74C174 hex D-type flip-flop is a monolithic complementary MOS CMOS integrated circuit constructed with N- and P-channel enhancement transistors. All have a direct clear input. Information at the D inputs meeting the

1 phase SCR TRIGGER PULSE TRANSFORMER

Abstract: DA100 DA102 IEC958 74LS 76250EN NME0305D ZN509E gate drive pulse transformer RF transformer turn ratio 12
Contextual Info: TRANSFORMERS Application Notes CONTENTS 1 Impedance matching transformers 2 Selection procedure for matching transformers 3 Selection strategy 4 Transformers for thyristor drives 5 Transformer applications in analogue and digital circuits 6 Digital circuits

SIT Static Induction Transistor

Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Contextual Info: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are

MM74HC74AN

Abstract: MM74HC74AM 74HC 74LS M14A MM74HC74A MM74HC74AMTC MM74HC74AMTCX MM74HC74AMX MM74HC74ASJ
Contextual Info: Revised January 2005 MM74HC74A Dual D-Type Flip-Flop with Preset and Clear General Description The MM74HC74A utilizes advanced silicon-gate CMOS technology to achieve operating speeds similar to the equivalent LS-TTL part. It possesses the high noise immunity and low power consumption of standard CMOS integrated circuits, along with the ability to drive 10 LS-TTL

MM74C74N

Abstract: AN-90 M14A MM74C74 MM74C74M MS-001 N14A
Contextual Info: Revised January 1999 MM74C74 Dual D-Type Flip-Flop General Description • High noise immunity: The MM74C74 dual D-type flip-flop is a monolithic complementary MOS CMOS integrated circuit constructed with N- and P-channel enhancement transistors. Each flip-flop

TC9303AN

Abstract: TC9303 TC9306F TC9301AN toshiba TC9303AN cmos 4bit counter TC9172AP TC9227P TC9228P TC9302AF
Contextual Info: TOSHIBA TC9172AP,TC9227,28P TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9172AP, TC9227P, TC9228P HIGH SPEED PLL WITH BUILT-IN PRESCALER TC9172AP, TC9227P and TC9228P are high-speed PLL-LSI developed for digital tuning system use, and contain 2 modulus prescaler.

CDP-RX-03BS-R

Abstract: 434 MHZ RF transmitter MODULE
Contextual Info: OPERATION GUIDE Difference between RS4408925 old and RS133765 (new) is: RoHS version - no significant changes to spec. UHF narrow band radio data module CDP-RX-03BS-R 434 MHz Operation Guide Version 1.0 (Apr. 2006) CIRCUIT DESIGN, INC. 7557-1 Hotaka, Azumino

MAX691A

Abstract: MAX691 MAX691ACPE MAX693 MAX695 MAX800L
Contextual Info: 19-0094; Rev 7a; 12/96 Microprocessor Supervisory Circuits _Applications ♦ 200ms Power-OK/Reset Timeout Period ♦ 1µA Standby Current, 30µA Operating Current ♦ On-Board Gating of Chip-Enable Signals, 10ns Max Delay ♦ MaxCap or SuperCap™ Compatible