NA 122 FI Search Results

Contextual Info: I NA 122 INA122 INA 122 Single Supply, MicroPower INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● LOW QUIESCENT CURRENT: 60µA ● PORTABLE, BATTERY OPERATED SYSTEMS ● INDUSTRIAL SENSOR AMPLIFIER: Bridge, RTD, Thermocouple ● PHYSIOLOGICAL AMPLIFIER:

lm3242

Abstract: LM356 op-amp datasheet LM356 LM6484 SC14421 LM380 spice lm7412 LM117 model SPICE LM356 audio amplifier pc preamp with bass treble circuit diagrams lm324
Contextual Info:  Welcome to National Semiconductor's latest Linear Designers' Guide! Included in this guide are: • Product selection trees • Associated guides with definitive specifications • Alphanumeric index, to assist in finding the product ID you are seeking

2GM sot-23 transistor

Abstract: marking code 1AM 2N3904 SOT-23 MARKING CODE bc857 to92 TRANSISTOR 1g sot23 npn pin configuration NPN transistor BC817 sot-23 TS560 1aM sot-23 transistor bc848 to 92 BC848 e BC818
Contextual Info: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

5bp6

Contextual Info: INSTR DESIGN/DISPLAY PDTS 35E » H MflllOflb D0DQ042 fi H IDEA TW/'Of A-Z3-ÍW _ ;_ Idea ' Description lv @ 3V Min Typ Part No. 201/2 Fig. No. Description lv @ 3V Min Typ Part No. 201/2 Fig. No. Flashing LED Lamps Max operating voltage 5 volts

Contextual Info: INSTR DESIGN/DISPLAY PDTS 3SE í • MêllOBb 0000042 fl « I D E A T-V/'OI _ _Zlwdea Description Part No. lv @ 3V Typ Min 201/2 Fig. No. Description Part No. lv @ 3V Min Typ 201 /2 Fig. No. - 114 201 /2 Fig. Na Flashing LED Lamps Max operating voltage 5 volts

RF/Microwave

Abstract: Surface Mount Thin-Film RF/Microwave Capacitor Technology Accu-P capacitors SRF 3733
Contextual Info: Thin-Film RF/Microwave Capacitor Technology Accu-P 5 Accu-P® Thin-Film Technology THE IDEAL CAPACITOR 1 The non-ideal characteristics of a real capacitor can be ignored at low frequencies. Physical size imparts inductance to the capacitor and dielectric and metal electrodes result in

1BW TRANSISTOR

Contextual Info: T 3 9 -3 / FF 50 R 06 KL SE E EU P E C • 3M G 32T7 0 0 0 0 ^4 E b fi HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p e r module DC, pro Zwelg / per arm RthCK pro Baustein/per module pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften

Contextual Info: Precision Low Noise, Low Input Bias Current Operational Amplifiers ADA4077-2 Preliminary Technical Data FEATURES 1 8 V+ OUT B –IN B +IN B OP2177 4 5 OUT A 1 –IN A 2 +IN A 3 V– 4 Figure 1. 8-Lead MSOP RM Suffix 8 V+ OP2177 7 OUT B 6 –IN B 5 +IN B

Contextual Info: Precision Low Noise, Low Input Bias Current Operational Amplifiers ADA4077-2 Preliminary Technical Data PIN CONFIGURATIONS OUT A –IN A +IN A V– 1 8 V+ OUT B –IN B +IN B OP2177 4 5 OUT A 1 –IN A 2 +IN A 3 V– 4 Figure 1. 8-Lead MSOP RM Suffix 8 V+

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*

F503

Abstract: PDIP20 SDIP32 SO20 ST52F500
Contextual Info: ST52F500/F503 ST52F500/F503 8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, I2C, SPI PRODUCT PREVIEW Memories • Up to 8 Kbytes Single Voltage Flash Memory ■ 256 bytes of Register File ■ 256 bytes of RAM ■ Up to 4 Kbytes Data EEPROM ■ In Situ Programming in Flash devices (ISP)

Transistor BFT 99

Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Contextual Info: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF

BC 148 transistor

Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Contextual Info: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

TIC 122 Transistor

Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
Contextual Info: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

Contextual Info: Toggles Series JB Low Profile Process Sealed Tactiles Rockers General Specifications Electrical Capacity Resistive Load Pushbuttons Low/Logic Level: Other Ratings Programmable Illuminated PB Keylocks Materials & Finishes Rotaries Slides Tactiles Tilt Contact Resistance:

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

ldpr 006h

Abstract: F503 PDIP20 SDIP32 SO20 ST52F500 400 wk2
Contextual Info: ST52F500/F503 ST52F500/F503 8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, I2C, SPI PRODUCT PREVIEW Memories • Up to 8 Kbytes Single Voltage Flash Memory ■ 256 bytes of Register File ■ 256 bytes of RAM ■ Up to 4 Kbytes Data EEPROM ■ In Situ Programming in Flash devices (ISP)

TIL78

Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE

FZT949

Contextual Info: FZT949 FI Ff!TRlf!Al - CHARACTERISTICS . . . . . . . . . . . . . at . . T.-. . ~,”— PARAMETER Collector-Base Voltage Breakdown = 25°C} —- SYMBOL MIN. TYP. ‘( BR CBO -50 -80 –, MAX. UNIT CONDITIONS. v l&-l IC=-IKA, — Collector-Emitter

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

4501 ic

Abstract: npn transistors,pnp transistors BC807 BC807-16 BC808 BC808-16 BC817 BC818 marking 5A
Contextual Info: BC807, BC808 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) Top View ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

Contextual Info: BC817, BC818 Small Signal Transistors NPN Features SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) • NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits.

D1302

Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

BC818

Abstract: SOT-23 6C SOT-23 6F BC817-16 BC818-16 BC807 BC808 BC817
Contextual Info: BC817, BC818 Small Signal Transistors NPN FEATURES SOT-23 ♦ NPN Silicon Epitaxial Planar Transistors .122 (3.1) .118 (3.0) .016 (0.4) ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,