N8 DIODE Search Results

SV-03 diode

Abstract: diode sv 03
Contextual Info: SKM 200GB176D .0 2 ME N8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 ME N8 B8 .O 2 QEH N8 QFHH 7 M@H C .0 2 RH N8 QRH C UHH C W MH 7 QH [+ .0 2 ME N8 MQH C .0 2 RH N8 Q]H C UHH C .O 2 QEH N8 QQHH C .03+( 2 ME N8 MQH

Contextual Info: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E

Contextual Info: SKM 100GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8TU .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 QMG E .0 2 RJ N8 SJ E QGJ E W MJ 7 QJ [+ .0 2 MG N8 QJJ E .0 2 RJ N8 HJ E QGJ

Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

Contextual Info: For Im e iia te Assistance, Contact Your Local Salesperson MPC506A MPC507A BURR - BROW N8 E 1 Single-Ended 16-Channel/Differential 8-Channel CMOS ANALOG MULTIPLEXERS FEATURES • NO CHANNEL INTERACTION DURING OVERVOLTAGE The MPC506A and MPC507A are fabricated with

YG225D8

Abstract: power Diode 800V 10A DIODE 10a 800v
Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2

WF-260

Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

DIODE 10a 800v

Abstract: YG225D8 power Diode 800V 10A YG225C8 YG225N8 N8 Diode
Contextual Info: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0

SSH10N80A

Abstract: 10N80A 1017 mosfet
Contextual Info: SSH1 0 N8 0 A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology 800 V BVpss ~ ^DS on = Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA (M ax.) @ VDS= 800V

Contextual Info: LT1431 Programmable Reference FEATURES n n n n n n DESCRIPTION Guaranteed 0.4% Initial Voltage Tolerance 0.1Ω Typical Dynamic Output Impedance Fast Turn-On Sink Current Capability, 1mA to 100mA Low Reference Pin Current Available in J8, N8, S8 or 3-Lead TO-92 Z Packages

R22 resistor

Abstract: resistor 100k CMPD914 MAX8544 MAX8544EEP vishay resistor 0603 1 TDK CS
Contextual Info: MAX8544 12V Input to 1.2V/8.5A Output Vin 10.8V to 13.2V VL R22 C13 9 15 ILIM1 R21 19 R19 D4 IN BST FSYNC 6 EN ON R23 SS 4 COMP 5 FB R14 VL R24 R16 R15 C14 N6 C18 C19 C20 Vout=1.2V / 8.5A L2 LX 14 R17 C17 VL VL 13 C28 N8 C15 4X DL 12 PGND 10 R18 C39 8 MODE

Resistor 100K

Abstract: R22 resistor c1819 102k x7r 100 C4532X5R0J107M CMPD914 MAX8544 MAX8544EEP C3225X7R C0603C104M9RAC
Contextual Info: MAX8544 12V Input to 1.8V/7.2A Output Vin 10.8V to 13.2V VL R22 C13 9 ILIM1 R21 19 R19 Sync In 15 D4 IN BST FSYNC 6 EN ON R23 SS 4 COMP 5 FB R14 VL R24 R16 R15 C14 N6 C18 C19 C20 L2 Vout=1.8V / 7.2A LX 14 R17 C17 VL VL 13 C28 N8 C15 4X DL 12 PGND 10 R18

MN8090

Abstract: SM15 CSP-5 mX464 VSS13 5V15V
Contextual Info: PANASONIC INDL/ELEK -CIO 693285^2 P A N A S O N I C *75 DETJbiaaflSa D D D t b m 4 | ~ I NDLt E L E C T R O N I C D 72C 0 6 6 9 4 . T-41-55 MN8090 M N8 09 0 1024 t*'y h MOS <1 - 7 -f * - i > - b Self-Scanning 1024-Bit MOS Linear Image Sensors ^ ® M N 8090Ü ,

Contextual Info: 7 C1ECIE37 G O m ^ l 513 • S 6 T H SGS-THOMSON £ t7 :G Jû T [M 0 gS S T P 5 N8 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP5N 80XI V dss R d S (o ii Id 800 V < 2 .4 n 2 .6 A ■ T Y P IC A L RDS(on) = 1.9 £2 ■ . ■ . . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101

n13 sot 65

Abstract: FDT461N 29e8 RS80 marking 461 m067
Contextual Info: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode

FDN363N

Abstract: N6 marking diode marking n9
Contextual Info: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)

m079

Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Contextual Info: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse

65e9

Abstract: TB370 AN7254 AN7260 ITF86116SQT
Contextual Info: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode

Contextual Info: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode

HUFA76404DK8T

Abstract: NL103
Contextual Info: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

13E1

Contextual Info: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode

AN7254

Abstract: AN7260 ITF86174SQT ITF86174SQT2 TB370
Contextual Info: ITF86174SQT Data Sheet 9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging TSSOP-8 Features • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = −10V - rDS(ON) = 0.024Ω, VGS = −4.5V - rDS(ON) = 0.027Ω, VGS = −4V • Gate to Source Protection Diode