N8 221 Search Results

008J

Abstract: 260J E13288 MIL-T-7928
Contextual Info: 0RAW/N8 HADC IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMR INCORPORATED. REVISIONS Dl ST LOC ,1 9 14 ALL INTERNATIONAL RIGHTS RESERVED. LTR 20NE REVISED PER 0720-0230-93 APPO 2/2S/94 ^ O A P 1 B DATE

AG10

Abstract: AJ10 AK10 b3640 b1333 B10-301 B9432 b12123 B8528
Contextual Info: EPXA4 I/O Pins ver. 1.20 I/O & VREF Pad Number Bank Orientation Pin/Pad Function 1,020-Pin FineLine BGA 672-Pin FineLine BGA B1 1 PIPESTAT0 N10 H6 B1 2 PIPESTAT1 N9 H7 B1 3 PIPESTAT2 M9 L10 B1 4 TRACECLK N8 L9 B1 5 TRACESYNC M8 J6 B1 6 TRACEPKT0 L8 M8 B1 7

B8530

Abstract: OAH29 B13101 AG10 AJ10 B10-276 B8472 B1370 B3640 672-pin
Contextual Info: EPXA4 I/O Pins ver. 1.21 I/O & VREF Pad Number Bank Orientation Pin/Pad Function 1,020-Pin FineLine BGA 672-Pin FineLine BGA B1 1 PIPESTAT0 N10 H6 B1 2 PIPESTAT1 N9 H7 B1 3 PIPESTAT2 M9 L10 B1 4 TRACECLK N8 L9 B1 5 TRACESYNC M8 J6 B1 6 TRACEPKT0 L8 M8 B1 7

IRFP250N

Abstract: n8 221 65e9 size 805
Contextual Info: IRFP250N N-Channel Power MOSFET 200V, 30A, 0.075Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.052Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

65e9

Abstract: irfp250n
Contextual Info: IRFP250N N-Channel Power MOSFET 200V, 30A, 0.075Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.052Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

IRFP250N

Contextual Info: IRFP250N N-Channel Power MOSFET 200V, 30A, 0.075Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.052Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

75945p

Abstract: 100V 10A NMOS TO220 AN9321 AN9322 HUF75945G3 HUF75945P3 HUF75945S3ST TB334
Contextual Info: HUF75945G3, HUF75945P3, HUF75945S3ST Data Sheet December 2001 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.071Ω, VGS = 10V DRAIN (TAB) JEDEC TO-220AB

Contextual Info: HUF75945G3, HUF75945P3, HUF75945S3ST TM Data Sheet December 2000 File Number 5009 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.071Ω, VGS = 10V DRAIN

65e9

Abstract: n8 221 75945P AN9321 AN9322 HUF75945G3 HUF75945P3 HUF75945S3ST TB334 100V 10A NMOS TO220
Contextual Info: HUF75945G3, HUF75945P3, HUF75945S3ST Data Sheet December 2000 File Number 5009 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.071Ω, VGS = 10V DRAIN (TAB)

Contextual Info: HUF75945G3, HUF75945P3, HUF75945S3ST Data Sheet December 2000 File Number 5009 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.071Ω, VGS = 10V DRAIN (TAB)

HX8347-G

Contextual Info: DATA SHEET DOC No. HX8347-G(T -DS ) HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2009 For Go-tek Only HX8347-G(T) 240RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Endevco 2215

Abstract: 2n2222 h parameter values HP5082-4204 LT1010 TO-5 hp5082-2810 2N2222 circuit Endevco 104 HP5082-4204 photodiode Endevco amplifier Power AMPLIFIER 6012
Contextual Info: LT1022 High Speed, Precision JFET Input Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:

2N2222 chip

Abstract: HP-5082-4204 2n2222 h parameter values HP5082-4204 Endevco 2215 LT318A
Contextual Info: LT1022 High Speed, Precision JFET Input Operational Amplifier FEATURES • ■ ■ ■ ■ U ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:

C16185

Abstract: D346 PA-PGA240-01 Q560 2E682 30h2 65c51
Contextual Info: PA-PGA240-01 Map Rev A, 10/4/89 221 181 141 101 61 21 201 161 121 81 41 1 21 61 101 141 181 221 1 41 81 121 161 201 A1 A17 R1 R17 2.1" 2.3" 220 180 140 100 60 20 240 200 160 120 80 40 Bottom View-Base PGA Base A1 23 A2 3 A3 43 A4 63 A5 42 A6 41 A7 83 A8 103

LF155A

Contextual Info: uim TECHNOLOGY LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers FCHTURCS D€SCRIPTIOn • Guaranteed Offset Voltage -5 5 °C to +125°C ■ Guaranteed Drift ■ Guaranteed Bias Current 70°C 125°C ■ Guaranteed Slew Rate 150/iV Max.

Contextual Info: ANALOG DEVICES □ AD741 Series FEATURES Precision Input Characteristics Low Vos: 0.5 m V max L Low Vos D rift: 5 |iV/°C max (l_) Low lb: 50 nA max {L) Low l0s- 5 nA max (L> High CMRR: 90 dB min (K, L) High O utput Capability A ql = 25,000 min, 1 k il Load (J, S)

Contextual Info: LT1457 Dual, Precision JFET Input Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ Handles 10,000pF Capacitive Load 450µV Max Offset Voltage 1200µV Max Offset Voltage in S8 Package 50pA Bias Current at 70°C 13nV/√Hz Voltage Noise 4V/µs Slew Rate

application of TL084

Abstract: LF351 op-amp D/A Linear amp 10m TL084 LT1013DS8 LT1057 LT1113 LT1457 LT1457ACN8 LT1457CN8
Contextual Info: LT1457 Dual, Precision JFET Input Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ Handles 10,000pF Capacitive Load 450µV Max Offset Voltage 1200µV Max Offset Voltage in S8 Package 50pA Bias Current at 70°C 13nV/√Hz Voltage Noise 4V/µs Slew Rate

AD736

Abstract: CA3046 equivalent
Contextual Info: Low Cost, Low Power, True RMS-to-DC Converter AD737 FUNCTIONAL BLOCK DIAGRAM Computes True rms value Average rectified value Absolute value Provides 200 mV full-scale input range larger inputs with input attenuator Direct interfacing with 3½ digit CMOS ADCs

AD736

Abstract: BQ JN AD737 AD737A AD737B AD737J AD737JR-5 AD737K NTR4501NT1 nichicon CF
Contextual Info: Low Cost, Low Power, True RMS-to-DC Converter AD737 FUNCTIONAL BLOCK DIAGRAM Computes True rms value Average rectified value Absolute value Provides 200 mV full-scale input range larger inputs with input attenuator Direct interfacing with 3½ digit CMOS ADCs

AD736

Abstract: ca3046 FULL WAVE RECTIFIER and waveforms tp-104-01-00 AD737 AD737A AD737B AD737J AD737JR-5 AD737K
Contextual Info: Low Cost, Low Power, True RMS-to-DC Converter AD737 FUNCTIONAL BLOCK DIAGRAM Computes True rms value Average rectified value Absolute value Provides 200 mV full-scale input range larger inputs with input attenuator Direct interfacing with 3½ digit CMOS ADCs

Contextual Info: □ ANALOG DEVICES FEATURES Precision Input Characteristics Low Vos: 0.5 mV max L Low Vos Drift: 5 jaV/°C max (L) Low lb: 50 nA max (L) Low los: 5 nA max (L) High CMRR: 90 dB min (K, L) High Output Capability A ol = 25,000 min, 1 kO Load (J, S) " ^ m in

Contextual Info: Signetlcs RF Communications Product specification Video amplifier NE/SA/SE592 DESCRIPTION FEATURES The NE/SA/SE592 is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of 100 and 400 without external components and adjustable gains