N70 TRANSISTOR Search Results

MARKING 3H7

Abstract: n70b 2SC3775
Contextual Info: SA NY O SEMICONDUCTOR SEE D CORP 7=n70?b dOOt-fiaT M T-3H1 2SC3775 2018A N P N Epitaxial P la n a r S ilico n T ran sis to r UHF Low-Noise Wide-Band Amp Applications 1948B Applications . UHF low-noise amplifiers, wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz .

n20 ic protector

Abstract: ICP-N10 ICP-N15 ICP-N38 ICP-N25 ICP-N50 ICP-N20 N38 transistor ICP-N5 T104
Contextual Info: IC protector Transistors Circuit protection elements !Circuit protection elements Rohm’s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short circuit loads. Whether operated in AC or DC circuits, these circuit protectors have a very low internal resistance in

SOT23 W1P

Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23

F39-JC3A

Abstract: F39-JC7A F39-JC10A F39JC7A F39-JC3A-l F39JC10A E517-E1-01 F39-JC15A F3WN-X0487N25 F3WN-X1177N70
Contextual Info: Area Sensor for Workpiece Detection F3WN-X Equipped with incident level display and error code display functions for greater ease of use. • Minimum beam gap: 9 mm. Detection of capability: 14 mm dia. • Minimum sensor length: 187 mm (11 beams). • Maximum sensor length: 1,822 mm (120 beams).

N70 transistor

Contextual Info: Philips Semiconductors 0031107 bbSSTBl 2 GHz RF power transistor DESCRIPTION T M 5 — APY^eliminaryspecification BFG10; BFG10/X N AUER PHILIPS/DISCRETE bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation

N70 transistor

Abstract: BFG10 Code N71 MS-014
Contextual Info: P h ilip ^ e n iiç o n d u c t o r ^ ^ ^ gg bbS3T31 0031107 TM5 M A P y >re|iminary specification 2 GHz RF power transistor BFG10; BFG10/X N DESCRIPTION AMER P H IL IP S /D IS C R E T E b 'iE PINNING NPN silicon planar epitaxial transistor primarily designed for

N70 transistor

Abstract: n69 transistor marking code n70 DDTD (xxxx) U
Contextual Info: DDTD xxxx U NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Biasing Resistors, R1, R2 A 3 OUT SOT-323 B C Mechanical Data · · · ·

N70 transistor

Abstract: DDTD113EU DDTD113ZU DDTD114EU DDTD114TU DDTD122JU DDTD123EU DDTD123TU DDTD123YU DDTD133HU
Contextual Info: SPICE MODELS: DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU DDTD123TU DDTD143TU DDTD114TU DDTD114GU DDTD xxxx U NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

n66 sot23

Abstract: N72 SOT-23 72 SOT23 MARKING N70 transistor DDTD114GC
Contextual Info: DDTD xxxx C NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Biasing Resistors, R1, R2 Also Available in Lead Free Version A TOP VIEW

N60 SOT-23

Abstract: DDTD113ZC DDTD114EC DDTD122JC DDTD123EC DDTD123YC DDTD133HC DDTD143EC DDTD113EC marking code n60
Contextual Info: DDTD xxxx C NPN PRE-BIASED 500mA SOT-23 SURFACE MOUNT TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Biasing Resistors, R1, R2 Lead Free/RoHS Compliant (Note 2) SOT-23 A TOP VIEW B

N60 SOT-23

Abstract: N72 SOT-23 DDTD113EC DDTD113ZC DDTD114EC DDTD114TC DDTD122JC DDTD123EC DDTD123TC DDTD123YC
Contextual Info: SPICE MODELS: DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC DDTD xxxx C NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

N72 SOT-23

Abstract: N60 SOT-23 marking code 24 sot 23 SOT23 MARKING CODE 72 N70 transistor MARKING CODE 24 TRANSISTOR 7K MARKING DDTD113EC DDTD113ZC DDTD114TC
Contextual Info: SPICE MODELS: DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC DDTD xxxx C NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

n67 transistor

Abstract: N70 transistor DDTD (xxxx) U
Contextual Info: SPICE MODELS: DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU DDTD123TU DDTD143TU DDTD114TU DDTD114GU DDTD xxxx U NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

N70 transistor

Abstract: DDTD (xxxx) U
Contextual Info: DDTD xxxx U NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Biasing Resistors, R1, R2 Also Available in Lead Free Version A 3 OUT

DDTD114GC

Contextual Info: SPICE MODELS: DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC DDTD xxxx C NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

N60 SOT-23

Abstract: marking code k1 marking code n60 DDTD114EC-7-F 7K MARKING Diode SOT-23 marking J marking sot-23 DDTD113EC DDTD113ZC DDTD114EC
Contextual Info: DDTD xxxx C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Mechanical Data • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTB) Built-In Biasing Resistors, R1, R2

DDTD114GC

Abstract: MARKING CODE N60 GO SOT-23
Contextual Info: SPICE MODELS: DDTD113EC DDTD123EC DDTD143EC DDTD114EC DDTD122JC DDTD113ZC DDTD123YC DDTD133HC DDTD123TC DDTD143TC DDTD114TC DDTD114GC DDTD xxxx C NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR Features • · · · SOT-23 Epitaxial Planar Die Construction

Contextual Info: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating

SOT-323 MARKING M

Abstract: N70 transistor transistor built in resistors 47k 22k DDTD (xxxx) U
Contextual Info: SPICE MODELS: DDTD113EU DDTD123EU DDTD143EU DDTD114EU DDTD122JU DDTD113ZU DDTD123YU DDTD133HU DDTD123TU DDTD143TU DDTD114TU DDTD114GU DDTD xxxx U Lead-free Green NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction

JCP-N15

Abstract: CPN38 ICP-F25 ICP-N25 N25 ICP ICP-F50 ICP-F10 icp-s1.8 ICP-N70 ICP-N50
Contextual Info: ROHRI Circuit Protection Elements •R O H M ’s Circuit Protection Elements RO HM overcurrent protection elements are in lightweight, small package, offering low internal impedance against rated current, but high resistance against cut off current. They positively protect semiconductors such as ICs, LSIs,

silicon npn planar rf transistor sot 143

Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
Contextual Info: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base

2n3035

Abstract: 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix
Contextual Info: ADDITIONAL TRANSISTORS Item Number Part Number Manufacturer PolarIty Mati. Description Package Style Avalanch Transistors CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 5 SemiconTech See Index See Index See Index See Index NthAmerSemi NPN NPN NPN NPN NPN PNP Si Si

m5m5408FP

Abstract: m5m5408p 32P2MA
Contextual Info: MITSUBISHI LS Is , -55LL,-70LL,-85LL,-1 OLL 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5408 is 4194304-bit CMOS static RAM organized as 524288-words by 8-bit, fabricated using high-performance

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961