N60 EQUIVALENT Search Results

20N60A4

Abstract: 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A HGTG20N60A4 ICE 280 HGTG20N60A4D HGTP20N60A4 LD26
Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet Title GT 0N6 4, GTP N60 bt 0V, MPS ries October 1999 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

Contextual Info: TOSHIBA RN6006 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N60 06 Unit in mm MOTOR DRIVE CIRCUIT APPLICATIONS. POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 4 .6 M A X . With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

diode F4 6A

Abstract: 4F36F123
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

Contextual Info: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A  applications

Contextual Info: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A • applications

Contextual Info: DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits RDS(ON) max ID max TA = +25°C • Typical off board profile of 0.5mm - ideally suited for thin 85 mΩ @ VGS = 10V 3.0A • applications

Contextual Info: OSSM SSNIA Subminiature Coaxial Connectors Table of C ontents The success of the OSM (SMA) connector created a need for a smaller version for reduced packaging requirements. The OSSM (SSMA) series was designed to a size compatible with smaller diameter semi-rigid cable. The

CSS-2314Y-1

Abstract: CSS-2314Y 314A1 2311F CSS-2314F-1 CSS-2314D
Contextual Info: Outline Polarity Package Digit Height Device mm inch Super-bright Red (R)/ Orange IE)/ Yellow (Y)/Super Green (G)/ Device Red ID) Bright Red (H) Amber (A) Bright Yellow (T| Bright Green (F) Package Xp = 660 nm Xp = 655/695 nm Xp = 635/610 nm Ap= 590/585 nm

ss92

Abstract: sn40 SS-92 Corning 7052 vari-l dbm 107D 204C 213B MIL-C-26074 SS 92
Contextual Info: SS-92 SPST Flatpack RF Switch MOIL 100-1000 MHz GUARANTEED M INIM UM PERFORMANCE DATA TEST CONDITION DESCRIPTION SS-92 is a m in ia tu re high p e rfo rm a n ce RF sw itc h in te nd ed fo r ad va n ce d re c e iv e r ap plicatio ns. The SS-92 is an ideal c h o ic e in

1n59c

Abstract: 1816EG-1 css1814e N57 J CSS-1815G
Contextual Info: P a ck a g e O u tline X o £ iß ~ ST P o la rity D e v ic e mm inch A Su pe r-b rig h t R ed <R)/ O ra n g e (El/ Y e llo w (Y)/Super G re en (G)/ D e v ice R ed (D) B rig h t Red (H) A m b e r (A) Bright Y e llo w (T) Bright G re en (F) P a cka g e

inverter omron 3G3jV

Abstract: inverter omron 3G3EV 3G3JV-AB004 3G3JV-AB007 inverter omron 3G3jV-a4022 OMRON 3G3JV 3G3JV-A2015 transistor A2022 catalog inverter omron 3G3EV 3G3JV-A2007
Contextual Info: Cat.No. I905–E1–2 SYSDRIVE 3G3JV Series CATALOG Nomenclature Panel Top protection cover: Remove this cover when wiring the upper terminal block. Upper terminal block: A terminal block on the input side of the main circuit. Digital Operator: Used to set parameters, perform various

Contextual Info: MODEL CMF Metal Film Resistors Military, MIL-R-10509 Qualified, Type RN Military, MIL-R-22684 Qualified, Type RL FEATURES • Very low noise • Very low voltage coefficient • Controlled temperature coefficient • Excellent high frequency characteristics

dv 700 inverter

Abstract: 1700 KP
Contextual Info: ¿mmSuskns SSI 78A207 MFR1 Receiver A TDK Group/Company July 1990 DESCRIPTION FEATURES The SSI 78A207 is a single-chip, Multi-Frequency MF receiver that can detect all 15 tone-pairs, including ST and KP framing tones. This receiver is intended for use in equal access applications and thus meets both Bell

Contextual Info: ó é m ó iis k m SSI 78A207 MFR1 Receiver s A TDK Group/Company July 1990 DESCRIPTION FEATURES The SSI 78A207 is a single-chip, Multi-Frequency MF receiver that can detect all 15 tone-pairs, including ST and KP framing tones. This receiver is intended for use

1700 KP

Abstract: 2 channel tone receiver circuit 1700KP 78A207 78A207-CP N180
Contextual Info: 78A207 MFR1 Receiver April 2000 DESCRIPTION FEATURES The 78A207 is a single-chip, Multi-Frequency MF receiver that can detect all 15 tone-pairs, including ST and KP framing tones. This receiver is intended for use in equal access applications and thus meets

d3 6440 9

Contextual Info: 78A207 MFR1 Receiver DATA SHEET OCTOBER 2005 DESCRIPTION FEATURES The 78A207 is a single-chip, Multi-Frequency MF receiver that can detect all 15 tone-pairs, including ST and KP framing tones. This receiver is intended for use in equal access applications and thus meets

1700 KP

Abstract: 78A207 78A207-CP N180 dv 700 inverter
Contextual Info: 78A207 MFR1 Receiver April 2000 DESCRIPTION FEATURES The 78A207 is a single-chip, Multi-Frequency MF receiver that can detect all 15 tone-pairs, including ST and KP framing tones. This receiver is intended for use in equal access applications and thus meets

ddr3 MTBF

Abstract: SENSE23 4sp560m t
Contextual Info: VCN60/70 Series www.murata-ps.com High Efficiency, High Current Density, 60 or 70 Amp Single Inline Package DC/DC Converters DESCRIPTION ESCRIPTIO ON Designed signed to su support upport DDR1 DDR1, 1, DDR2 and DDR3 SDRA SDRAM AM memoryy power requ requirements,

omron europe manuals cqm1 cpu45 v1

Abstract: CPU45 -V1 omron plc CQM1H CPU 51 troubleshooting CP1L-M30 PLC to pc Communication cables pin diagram omron Omron Sysmac C200HG FANUC PARAMETER CJ1G 44H
Contextual Info: Cat. No. V107-E1-08 NB-series NB3Q-TW••B NB5Q-TWB NB7W-TWB NB10W-TW01B Programmable Terminals SETUP MANUAL OMRON, 2011 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form, or

ddr3 MTBF

Contextual Info: VCN60/70 Series www.murata-ps.com High Efficiency, High Current Density, 60 or 70 Amp Single Inline Package DC/DC Converters DESCRIPTION ESCRIPTIO ON NOT RECOMMENDED FOR NEW DESIGNS Designed signed to su support upport DDR1 DDR1, 1, DDR2 and DDR3 SDRA SDRAM

FP10R12YT3

Abstract: FP10R12YT3_B4 MN60
Contextual Info: Technische Information / technical information FP10R12YT3_B4 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" " # $%& ' . " $+ ' / 0 $%& ' $+ ' ()0 $%& ' .)

china DVD player power circuit diagram

Abstract: THS8134 DB 15 vga connector ti adc 808 60 pin LCD connector to vga 15 pin conversion DVD player circuit diagram ti N60 THS4062 THS8083 RED/EPB-110
Contextual Info: Data Acquisition Texas Instruments Incorporated A/D and D/A conversion of PC graphics and component video signals, Part 1: Hardware Bart DeCanne System/Applications & Strategic Marketing—Digital Video Products Introduction This first part of a two-part article describes a design for

1785-L60B

Abstract: 1784-CP10 1785-L80 1785-L26B 1785-L40L 1785-L40E 1785-UM022 LED light bar controler circuit diagram PLC-5 1770-KF2 IMC123 hardware manual
Contextual Info: Enhanced and Ethernet PLC-5 Programmable Controllers 1785-L11B, -L20B, -L30B, -L40B, -L40L, -L60B, -L60L, -L80B, -L20E, -L40E, -L80E, -L26B, -L46B, -L86B User Manual Important User Information Solid state equipment has operational characteristics differing from those of

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power