N6 MARKING DIODE Search Results

SD card CARD PCB FOOTPRINT

Abstract: SD card footprint PCB
Contextual Info: EMIF06-MSD02N16 6-line IPAD , EMI filter and ESD protection Features High design flexibility • Lead free package ■ Very low PCB space consumption: 3.5 mm x 1.2 mm ■ Very thin package: 0.5 mm ■ High efficiency in ESD suppression ■ IEC 61000-4-2 level 4

65e9

Abstract: irfp250n
Contextual Info: IRFP250N N-Channel Power MOSFET 200V, 30A, 0.075Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.052Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

n306ad

Abstract: ISL9N306AD3ST 39e3 N-306A
Contextual Info: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

n312ad

Abstract: TO-252AA Package N312A
Contextual Info: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

FDD24AN06LA0

Abstract: mosfet 30V 18A TO 252
Contextual Info: FDD24AN06LA0 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

n318ad

Abstract: ISL9N318AD3ST
Contextual Info: ISL9N318AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

FDB3632

Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

N306AS

Abstract: N306A ISL9N306AS3ST ISL9N306AP3
Contextual Info: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

ISL9N316AP3

Abstract: ISL9N316AS3ST N316
Contextual Info: ISL9N316AP3/ISL9N316AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

FDD20AN06A0-F085

Abstract: FDD20AN06A0 80uH NL106 rs4e
Contextual Info: FDD20AN06A0 _ F085 N-Channel PowerTrench MOSFET 60V, 45A, 20mΩ Features Applications • r DS ON = 17mΩ (Typ.), VGS = 10V, ID = 45A • Motor / Body Load Control • Qg(tot) = 15nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

tc124e

Abstract: FDB8870 W23A marking 36e9 so-6
Contextual Info: FDB8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

FDB2532

Abstract: IS10E nl109 RG101 DIODE N7 33a
Contextual Info: FDB2532_F085 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

N310AS

Abstract: ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST M028
Contextual Info: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

LT1009CZ

Abstract: LM136 LT1009 NCV1009 NCV1009D NCV1009DR2 NCV1009Z N3 smd 2492 smd resistor
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming which minimizes voltage tolerance and

Contextual Info: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure

MP3302

Abstract: MP3302DJ MP3302DJ-LF-Z MP3302D zener diode C3 MP3302DD MP3302DD-Z MBR0520 TSOT23 TSOT23-5
Contextual Info: MP3302 40V, 1.3A, Single-cell Step-up White LED Driver with Single Wire Dimming Control The Future of Analog IC Technology DESCRIPTION FEATURES The MP3302 is a step-up converter designed for driving arrays of WLEDS from a single cell Lithium Ion battery. The MP3302 uses current

hp89

Abstract: 44BC374CD uhf modulator MC44BC373C MC44BC373CD MC44BC373CDTB MC44BC374C MC44BC374CD MC44BC374CDTB SO16NB
Contextual Info: Technical Data MC44BC373C/D Rev. 3.1 7/2002 MC44BC373C/374C MC44BC373C/374C PLL Tuned UHF and VHF Audio/Video High Integration Modulator SO16NB Package TSSOP16 Package Ordering Information Device Temp Range Package MC44BC373CD,R2 MC44BC374CD,R2 MC44BC373CDTB,R2

JPP-95

Abstract: t3.15A/250V optocoupler 356T TEA1733 smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
Contextual Info: UM10385 GreenChip 65 W TEA1733 L T demo board Rev. 02 — 2 June 2010 User manual Document information Info Content Keywords Notebook adapter, TEA1733(L)T, Low standby power, High efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics, and Printed-Circuit

4600 fet transistor

Abstract: LTM4600 LTM4600S n20 n21 fet sanyo CAP 330uF 35V 320 5400 capacitor 4600 fet LTM4600EV LTM4600IV PN01
Contextual Info: Electrical Specifications Subject to Change LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current

TSZ121

Abstract: NP MARKING CODE SOT23-5
Contextual Info: TSZ121 High accuracy 20 V zero drift micropower 5 V op amp Datasheet — production data Features • Very low offset voltage: 20 µV max. ■ Ultra low offset voltage drift: 60 nV/°C max. ■ Rail-to-rail input and output ■ Low supply voltage: 1.8 - 5.5 V

RSN 310 R37

Abstract: smd code marking v37 w32 smd transistor TRANSISTOR SMD MARKING CODE W25 AW1034 SMD transistor n36 MARKING SMD T43 A4017 smd transistor marking K7 LX550T
Contextual Info: Virtex-6 FPGA Packaging and Pinout Specifications UG365 v2.2 February 23, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

Contextual Info: GEC P LES S EY S i DECEMBER 1997 S E M I C O N D U C T O R S ADVANCE INFORMATION DS3713 - 6.4 PDSP16488A SINGLE CHIP 2D CONVOLVER WITH INTEGRAL LINE DELAYS Supersedes version in 1996 Media 1C Handbook, HB4599-1.0, DS3713-5.1 and the PDSP16488A MA data sheet, DS3742

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

SM320VC33

Abstract: 320VC33 SM320VC33-120EP SM320VC33-EP SM320VC33PGEA120EP VC33
Contextual Info: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)