N6 MARKING DIODE Search Results

transistor marking N1

Abstract: marking CODE n3 NRD4007 marking n4 n1 MARKing NRD4003 sma flat NSD12 NSD15 NRD4004
Contextual Info: 02/22/2006 www.niccomp.com | tech support: tpmg@niccomp.com COMPONENT MARKING PRODUCTS: SMT DIODES SERIES: NRD & NSD TYPE: SMA SIZE FLAT CHIP RECTIFIER DIODES NIC SERIES: NRD N1 PART NUMBER CODE: N1 = NRD4001, N2 = NRD4002, N3 = NRD4003, N4 = NRD4004 N5 = NRD4005, N6 = NRD4006, N7 = NRD4007

Contextual Info: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101

n13 sot 65

Abstract: FDT461N 29e8 RS80 marking 461 m067
Contextual Info: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode

FDN363N

Abstract: N6 marking diode marking n9
Contextual Info: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)

SD card CARD PCB FOOTPRINT

Abstract: SD card footprint PCB
Contextual Info: EMIF06-MSD02N16 6-line IPAD , EMI filter and ESD protection Features High design flexibility • Lead free package ■ Very low PCB space consumption: 3.5 mm x 1.2 mm ■ Very thin package: 0.5 mm ■ High efficiency in ESD suppression ■ IEC 61000-4-2 level 4

zener diode n8

Abstract: Diode marking m7 N6 marking diode L9 Zener M7 zener zener n7 sod marking m7 n2 Diode Zener M7 zener diode CMOZ11L
Contextual Info: CMOZ1L8 THRU CMOZ47L SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package,

Diode marking m7

Abstract: L9 zener zener diode n8 M7 zener ZENER DIODE M5 diode MARKING CODE P9 n2 Diode Zener marking code M6 marking CODE n3 marking CODE n5
Contextual Info: Central CMOZ1L8 THRU CMOZ47L TM Semiconductor Corp. SURFACE MOUNT ULTRAmini LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

zener diode n8

Abstract: N6 marking diode M7 zener diode Diode marking m7 diode MARKING CODE P9 n2 Diode Zener ZENER MARKING r8 ZENER DIODE P8 marking code zener diode A SOD523 M2 MARKING CODE
Contextual Info: CMOZ1L8 THRU CMOZ47L SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package,

DDTA144ELP

Abstract: DDTC144ELP DDTC144ELP-7 DFN1006-3 marking K
Contextual Info: DDTC144ELP PRE-BIASED R1=R2 SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes

Diode marking m7

Abstract: zener diode n8 zener diode M7 M7 zener CMOZ10L CMOZ11L CMOZ12L CMOZ13L CMOZ15L CMOZ16L
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

ZENER DIODE M5

Abstract: zener diode n8 Diode marking m7 zener n7 diode 24 M7 zener marking of m7 diodes N6 marking code zener diode M7 n2 Diode Zener
Contextual Info: Central CMOZ2L4 THRU CMOZ43L TM Semiconductor Corp. ULTRAmini LOW LEVEL ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2L4 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded

FDP8880

Abstract: FDB8880
Contextual Info: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDP3682 N-Channel PowerTrench MOSFET 100 V, 32 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • Consumer Appliances • QG(tot) = 18.5 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit

Contextual Info: FDP16AN08A0 N-Channel PowerTrench MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Battery Protection Circuit

Contextual Info: FDP070AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 7 mΩ Features Applications • RDS on = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 51 nC (Typ.) @ VGS = 10 V • Battery Protection Circuit

Contextual Info: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit

IRF640N

Abstract: 11A ABS IRF640N FAIRCHILD MOSFET 640N 640N irf640n datasheet N-Channel MOSFET 200v IRF-640N
Contextual Info: IRF640N N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

IRF630N

Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
Contextual Info: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

Contextual Info: FDD8878 / FDU8878 N-Channel PowerTrench MOSFET 30V, 40A, 15mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDP42AN15A0 N-Channel PowerTrench MOSFET 150 V, 35 A, 42 mΩ Features Applications • RDS on = 36 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Consumer Appliances • QG(tot) = 33 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge

Contextual Info: FDP047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 mΩ Features Applications • R DS ON = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 92 nC (Typ.), VGS = 10V • Battery Protection Circuit

FDD8896

Abstract: FDU8896 FDD8896_NL
Contextual Info: FDD8896 / FDU8896 N-Channel PowerTrench MOSFET 30V, 94A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.8 mΩ Features Applications • RDS on = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 96 nC ( Typ.) @ VGS = 10 V

15E tube

Abstract: FDU8880
Contextual Info: FDU8880 N-Channel PowerTrench MOSFET 30V, 58A, 10mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low