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    N50B Search Results

    N50B Datasheets (19)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    N50B-01
    American Hakko Products Soldering, Desoldering, Rework Products - Soldering, Desoldering, Rework Tips, Nozzles - NOZZLE .8MM EX FR300 817 808 807 Original PDF 298.96KB
    N50B-02
    American Hakko Products Soldering, Desoldering, Rework Products - Soldering, Desoldering, Rework Tips, Nozzles - NOZZLE 1MM EXT FR300 817 808 807 Original PDF 298.96KB
    N50B-03
    American Hakko Products Soldering, Desoldering, Rework Products - Soldering, Desoldering, Rework Tips, Nozzles - NOZZLE 0.8MM FR300 817 808 807 Original PDF 298.96KB
    N50B-04
    American Hakko Products Soldering, Desoldering, Rework Products - Soldering, Desoldering, Rework Tips, Nozzles - NOZZLE 1.0MM FR-300 817/808/807 Original PDF 298.96KB
    N50B-05
    American Hakko Products Soldering, Desoldering, Rework Products - Soldering, Desoldering, Rework Tips, Nozzles - NOZZLE 1.3MM FR-300 817/808/807 Original PDF 298.96KB
    N50B-06
    American Hakko Products Soldering, Desoldering, Rework Products - Soldering, Desoldering, Rework Tips, Nozzles - NOZZLE 1.6MM FR-300 817/808/807 Original PDF 298.96KB
    badge JMPC15N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 15A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.51 ohm at VGS = 10V, suitable for fast switching, load switch, and power management applications. Original PDF
    badge JMPC25N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 25A, 500V N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 0.30 ohm at VGS = 10V, suitable for power management and PWM applications. Original PDF
    badge JMPF18N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 18A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.36 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package. Original PDF
    badge JMPF5N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 1.81 ohms at VGS = 10V, featuring fast switching, improved dv/dt capability, and 100% UIS and ΔVds tested. Original PDF
    badge JMPK5N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 1.81 ohm at VGS = 10V, designed for power management, load switching, and PWM applications. Original PDF
    badge JMPF15N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 15A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.51 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. Original PDF
    badge JMPC18N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 18A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.36 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. Original PDF
    badge JMPF25N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 25A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.30 ohm at VGS = 10V, designed for fast switching and power management applications in a TO-220FP-3L package. Original PDF
    badge 9N50B
    AK Semiconductor 9N50B N-channel enhancement mode MOSFET with 500V drain-source voltage, 9A continuous drain current, 0.90 ohm typical on-resistance at 10V gate-source voltage, and TO-220FG package. Original PDF
    badge JMPC5N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 5A N-channel Enhancement Mode Power MOSFET in TO-220C-3L package with RDS(ON) less than 1.81 ohms at VGS = 10V, designed for fast switching, PWM applications, and power management. Original PDF
    badge JMPC13N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 13A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. Original PDF
    badge 10N50B
    AK Semiconductor 10A 500V N-channel enhancement mode MOSFET with typical on-resistance of 0.45 ohms at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages. Original PDF
    badge JMPF13N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 13A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. Original PDF
    SF Impression Pixel

    N50B Price and Stock

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    onsemi FQNL2N50BTA

    Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME FQNL2N50BTA 1
    • 1 $0.79
    • 10 $0.30
    • 100 $0.26
    • 1000 $0.24
    • 10000 $0.21
    Get Quote

    Lovato Electric Inc LTN50BP2

    Wall mounting element
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LTN50BP2 1
    • 1 $9.44
    • 10 $8.26
    • 100 $8.26
    • 1000 $8.26
    • 10000 $8.26
    Get Quote

    Lovato Electric Inc LTN50BP1

    Vertical holder
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LTN50BP1 1
    • 1 $8.53
    • 10 $7.46
    • 100 $7.46
    • 1000 $7.46
    • 10000 $7.46
    Get Quote

    Sirectifier SMOS24N50B2L

    Transistor: N-MOSFET; unipolar; TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SMOS24N50B2L 1
    • 1 $3.49
    • 10 $2.77
    • 100 $2.49
    • 1000 $2.49
    • 10000 $2.49
    Get Quote

    Sirectifier SMOS62N50B5L

    Transistor: N-MOSFET; unipolar; TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SMOS62N50B5L 1
    • 1 $24.20
    • 10 $19.30
    • 100 $17.30
    • 1000 $17.30
    • 10000 $17.30
    Get Quote

    N50B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DA3X107K

    Abstract: DA2J10
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DA3X107K Silicon epitaxial planar type For high speed switching circuits DA2J107 in Mini3 type package • Features  Package  High reverse voltage VR  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.


    Original
    2002/95/ecda3x107kda2j107667-da3x107k0l+2da3x107k0lda2j10 PDF

    DB3X501K

    Abstract: db3x DB2J501
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X501K Silicon epitaxial planar type For high speed switching DB2J501 in Mini3 type package • Features  Package  Packaging  Code Mini3-G3-B  Pin Name 1: Anode 2: N.C. 3: Cathode


    Original
    2002/95/ecdb3x501kdb2j501667-db3x501k0l+2db3x501k0ldb3x PDF

    DA37102D0L

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DA37102D Silicon epitaxial planar type For high speed switching circuits 2 elements anode-common type DA3S102D in SSSMini3 type package • Features  Package  Packaging  Code SSSMini3-F2-B


    Original
    2002/95/ecda37102dda3s102d667-da37102d0l+1da37102d0l PDF

    DA3X102D

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DA3X102D Silicon epitaxial planar type For high speed switching circuits 2 elements anode-common type • Features  Package  Short reverse recovery time trr  Low terminal capacitance Ct


    Original
    2002/95/ecda3x102d667-da3x102d0lda3x102d0l PDF

    DB2S31

    Abstract: db3x
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X316J Silicon epitaxial planar type For small current rectification • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.


    Original
    2002/95/ecdb3x316jdb2s316667-db3x316j0l+3db3x316j0ldb2s31db3x PDF

    DB2J314

    Abstract: DB3X314 DB2J31400L
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB2J314 Silicon epitaxial planar type For high speed switching circuits DB3X314K in SMini2 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR


    Original
    2002/95/ecdb2j314db3x314k667-db2j31400l+2db2j31400ldb3x314 PDF

    DB4J314K

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB4J314K Silicon epitaxial planar type For high speed switching circuits DB4X314K in SMini4 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR


    Original
    2002/95/ecdb4j314kdb4x314kdb2j314+2667-db4j314k0rdb4j314k0r PDF

    Contextual Info: DB2S314 Silicon epitaxial planar type Unit: mm For high speed switching circuits DB2J314 in SSMini2 type package • Features  Small reverse current IR  Short reverse recovery time trr  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant


    Original
    db2s314db2j314ul-94db2s31400l PDF

    Contextual Info: DB2W403 Silicon epitaxial planar type Unit: mm For rectification DB24403 in Mini2 type package • Features  Low forward voltage VF  Forward current Average IF(AV) = 3 A rectification is possible  Halogen-free/RoHs compliant (EU RoHS/UL-94 V-0/MSL Level1 compliant)


    Original
    db2w403db24403rohs/ul-94db2w40300l PDF

    DB3J316

    Contextual Info: DB3J316K Silicon epitaxial planar type Unit: mm For small current rectification DB3X316K in SMini3 type package • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant


    Original
    db3j316kdb3x316kul-94db3j316k0l+1db3j316 PDF

    Contextual Info: DB3X407K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3J


    Original
    db3x407kul-94db3x407k0l PDF

    Contextual Info: Doc No. TT4-EA-14124 Revision. 2 Product Standards Schottky Barrier Diode DB2W40200L DB2W40200L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Forward current Average IF(AV) = 2 A rectification is possible


    Original
    tt4-ea-14124db2w40200lul-94 PDF

    DB2J50100L

    Contextual Info: Doc No. TT4-EA-12350 Revision. 2 Product Standards Schottky Barrier Diode DB2J50100L DB2J50100L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.25 0.35 • Features 0.13 2 1.7 2.5  Short reverse recovery time trr  Low terminal capacitance Ct


    Original
    tt4-ea-12350db2j50100lul-94 PDF

    Contextual Info: DB4J310K Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 4A


    Original
    db4j310kul-94db2j310db4j310k0r PDF

    Contextual Info: DB3X313F Silicon epitaxial planar type For small current rectification Unit: mm • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant


    Original
    db3x313ful-94db2j313db3x313f0l+2sc-59ao-236aa/sot-23 PDF

    Contextual Info: Doc No. TT4-EA-11922 Revision. 3 Product Standards Switching Diode DA4J104K0R DA4J104K0R Silicon epitaxial planar type Unit: mm 2.0 For high speed switching circuits 0.3 • Features 4 3 1 2 1.25 2.1  Small reverse current IR  Low terminal capacitance Ct


    Original
    tt4-ea-11922da4j104k0rul-94da2j104 PDF

    Contextual Info: DB6J314K Silicon epitaxial planar type For high speed switching circuits DB6X314K in SMini6 type package Unit: mm • Features  Short reverse recovery time trr  Small reverse current IR  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant


    Original
    db6j314kdb6x314kul-94db2j314+1db6j314k0r PDF

    Contextual Info: Doc No. TT4-EA-12399 Revision . 2 Product Standards Switching Diode DA6X102P0R DA6X102P0R Silicon epitaxial planar type Unit: mm 2.9 For high speed switching circuits 0.5 • Features 6 5 4 1 2 3 1.5 2.8  Short reverse recovery time trr  Low terminal capacitance Ct


    Original
    tt4ea-12399da6x102p0rul-94da3x102d PDF

    Contextual Info: Doc No. TT4-EA-13975 Revision. 3 Product Standards Switching Diode DA2610100L DA2610100L Silicon epitaxial planar type Unit: mm For high speed switching circuits DA27101 in ML2 type package 0.6 2 • Features 1.0  Small reverse current IR  Short reverse recovery time trr


    Original
    tt4-ea-13975da2610100lda27101ul-94 PDF

    Contextual Info: Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L DB3S406F0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.6 0.26 „ Features 0.13 3 0.85 1.6 y Small reverse current IR y Short reverse recovery time trr


    Original
    tt4-ea-12479db3s406f0lul-94db2s406 PDF

    db3j208

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3J208K Silicon epitaxial planar type For high speed switching circuits DB2J208 in SMini3 type package • Features  Package  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.


    Original
    2002/95/ecdb3j208kdb2j208667-db3j208k0l+2db3j208k0ldb3j208 PDF

    DB3X315E

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X315E Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.


    Original
    2002/95/ecdb3x315e667-db3x315e0ldb3x315e0l PDF

    DA3X101K

    Abstract: DA2J10 DA2J
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DA3X101K Silicon epitaxial planar type For high speed switching circuits DA2J101 in Mini3 package • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.


    Original
    2002/95/ecda3x101kda2j101667-da3x101k0l+3da3x101k0lda2j10da2j PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB3X316K Silicon epitaxial planar type For small current rectification • Features  Package  Short reverse recovery time trr  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.


    Original
    2002/95/ecdb3x316k667-db3x316k0ldb3x316k0l PDF