N50 FUSE Search Results

LA 47201

Abstract: 75631P AN9321 AN9322 HUF75631P3 TB334
Contextual Info: HUF75631P3 interdi Data Sheet O cto b e r 1999 F ile N um ber 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TQ-220AB • Ultra Low On-Resistance - rDS ON = 0.040£2, VGS = 10V SOURCE • Simulation Models - Temperature Compensated PSPICE and SABER®

HUF75623P3

Abstract: AN9321 AN9322 TB334
Contextual Info: HUF75623P3 in terrii N o vem ber 1999 D ata S h eet File N u m b er 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance ‘ SOURCE r DS ON = 0 .0 6 4 i2 , VGS = 1 0 V • Simulation Models

65e9

Abstract: 75637S 75637P 310E3 n72 m HUF75637P3 HUF75637S3S HUF75637S3ST TB334 tci model 510
Contextual Info: i n t e f s HUF75637P3, HUF75637S3S i l D a ta S h e e t O c t o b e r 199 9 F ile N u m b e r 472 1.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JED E C TO -220AB JEDEC TO-263AB SOURCE DRAIN FLANGE • Ultra Low On-Resistance

75639G

Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

75652G

Contextual Info: HUFA75652G3 TM Data Sheet November 2000 File Number 4964 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUFA75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models

75631S

Contextual Info: HUFA75631P3, HUFA75631S3ST TM Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA75631P3 HUFA75631S3ST

75852g

Contextual Info: HUFA75852G3 TM Data Sheet November 2000 File Number 4969 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

75321p

Contextual Info: HUFA75321P3, HUFA75321S3S TM Data Sheet 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUFA75829D3, HUFA75829D3S TM Data Sheet November 2000 File Number 4966 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75829D3S HUFA75829D3

Contextual Info: HUFA75329D3, HUFA75329D3S TM Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

N2357

Contextual Info: ISL9N2357D3ST TM Data Sheet October 2000 30V, 0.007 Ohm, 20A, N-Channel DenseTrench Power MOSFET File Number 4929 DenseTrench™ DenseTrench from Intersil is a new advanced MOSFET technology that achieves the lowest possible on-resistance per silicon area while maintaining fast switching and low gate

75652G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652 HUF75652G3 TB334
Contextual Info: HUF75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

65e9

Abstract: irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRFP150N TM Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

65e9

Abstract: 75637s TB334 AN9321 AN9322 HUF75637P3 HUF75637S3S HUF75637S3ST 75637P 156E-9
Contextual Info: HUF75637P3, HUF75637S3S Data Sheet October 1999 File Number 4721.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance

75344G

Contextual Info: HUFA75344G3, HUFA75344P3, HUFA75344S3S TM Data Sheet November 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75842P3, HUF75842S3S Data Sheet December 1999 File Number 4815 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance

IRF530N

Abstract: AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

75842P

Contextual Info: HUF75842P3, HUF75842S3S TM Data Sheet December 2000 File Number 4815.1 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75842P3 HUF75842S3S

HUF75623P3

Abstract: 929E-10 75623P AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: HUF75623P3 Data Sheet November 1999 File Number 4804 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF75623P3 • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models

LA 47201

Abstract: 75631P AN7254 AN7260 AN9321 AN9322 HUF75631P3 HUF75631T TB334
Contextual Info: HUF75631P3 Data Sheet October 1999 File Number 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF75631P3 • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models

AN7254

Abstract: AN7260 AN9321 AN9322 HUF76413P3 TB334 76413P RVTHRES228 7175-T
Contextual Info: HUF76413P3 interrii Data Sheet November 1999 File Num ber 4723.1 22A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features • Ultra Low On-Resistance JEDEC TO-220AB ‘ rDS ON = 0.049i2, VGS = 10V SOURCE ‘ rDS(ON) = 0.056i2, VGS = 5V

75542p

Contextual Info: HUFA75542P3, HUFA75542S3S TM Data Sheet November 2000 File Number 4954 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS ON = 0.014Ω, VGS = 10V GATE

90e7

Abstract: 89E-10 27e5
Contextual Info: HUFA75823D3, HUFA75823D3S TM Data Sheet November 2000 File Number 4965 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3S HUFA75823D3 Features

mosfet 75645p

Abstract: 75645p mosfet 75645p mosfet 75645s HUFA75645
Contextual Info: HUFA75645P3, HUFA75645S3S TM Data Sheet November 2000 File Number 4963 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75645P3 HUFA75645S3S