N5 MARKING Search Results

marking n52

Abstract: KRC868E
Contextual Info: SEMICONDUCTOR KRC868E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking N5 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N5 KRC868E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Component Marking

Abstract: EIA J code marking marking code capacitors EIA "J" code marking eia marking code tantalum marking code w5 marking marking j106 J106 MARKING E6
Contextual Info: Tantalum Chip Capacitors NTC-T Series CAPACITANCE CODES VOLTAGE CODES A e G J A C D E V H COMPONENT MARKING J Case Size J A5 E5 J5 N5 S5 W5 A6 E6 J6 N6 S6 W6 A7 J7 N7 S7 Code 2.5 4 6.3 10 16 20 25 35 50 Polarity Marking anode J 104 154 224 334 474 684 105

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: N> CO CO LLECTOR PO W E R D I S S I P A T I O N o 8 ë S g I P c m W OUTPUT SU SC EPTA N C E b ^ b ,* ) o ro en (m s ) S u y y y y / - c N5 8 y / 400 Ta y y / s SCO TEMPERATURE (ï) t\3 O l lg y y 5 mA AMBIENT ‘O II •-* < C Q a> O Q O il » 2 e “ 11 i S

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 7491192912 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE DATUM / DATE : 2006-08-01 A Mechanische Abmessungen / dimensions :

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 749119350 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE DATUM / DATE : 2006-08-01 A Mechanische Abmessungen / dimensions :

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 749119133 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE DATUM / DATE : 2006-08-01 A Mechanische Abmessungen / dimensions :

EER14

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 749119218 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE DATUM / DATE : 2006-08-01 A Mechanische Abmessungen / dimensions :

749119150

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : LF 749119150 POWER OVER ETHERNET-ÜBERTRAGER WE-PoE POWER OVER ETHERNET-TRANSFORMER WE-PoE DATUM / DATE : 2006-08-01 A Mechanische Abmessungen / dimensions :

Epcos N9 ferrite

Abstract: B78475-P1560-A2 B78475-P1561-A2 B78475-P1562-A2 B78475-P1563-A2 B78475-P1564-A2 B78475-P1565-A2 FIN0131-D FIN0132-L FIN0134-B
Contextual Info: Inductive Ferrite Components ISDN Transformers S Interface Modules Data Sheet ISDN Transformers B78475-P1560-A2 S0 Interface Modules Construction 3 30 max. Two S0 interface transformers transmitter/receiver in one case Additional quad chokes 15,1 max. 3

IRF630N

Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
Contextual Info: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

65e9

Abstract: irfp250n
Contextual Info: IRFP250N N-Channel Power MOSFET 200V, 30A, 0.075Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.052Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

HA022

Abstract: 10-35N2 0-50C8 HA335 1515N1 2-20C8 220n5 22-50C4 2-20N5 4735N
Contextual Info: HA www.vishay.com Vishay Sprague Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar FEATURES • Subminiature package size and light weight • Cylindrical case with axial or radial leads • 2 VDC to 50 VDC • 0.001 F to 68 μF • Operating temperature range: - 55 °C to + 125 °C

Contextual Info: HA www.vishay.com Vishay Sprague Subminiature, Leaded Solid Tantalum Capacitors Polar or Non-Polar FEATURES • Subminiature package size and light weight • Cylindrical case with axial or radial leads • 2 VDC to 50 VDC • 0.001 F to 68 μF • Operating temperature range: - 55 °C to + 125 °C

Contextual Info: FDP8870 e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

n306ad

Abstract: ISL9N306AD3ST 39e3 N-306A
Contextual Info: ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

n312ad

Abstract: TO-252AA Package N312A
Contextual Info: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

MOSFET 640N

Abstract: TO-262 MOSFET IRF640N IRF640NS 640N IRF640NL irf640* spice
Contextual Info: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER

FDM3622

Abstract: TRS250
Contextual Info: FDM3622 N-Channel PowerTrench MOSFET 100V, 4.4A, 60mΩ General Description Features r DS ON = 44mΩ (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

tc124e

Contextual Info: FDP8896_F085 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

630N

Abstract: IRF630NS IRF630N IRF630NL
Contextual Info: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER

FDD24AN06LA0

Abstract: mosfet 30V 18A TO 252
Contextual Info: FDD24AN06LA0 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

n318ad

Abstract: ISL9N318AD3ST
Contextual Info: ISL9N318AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

FDB3632

Contextual Info: FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9mΩ Features Applications • r DS ON = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • DC/DC converters and Off-Line UPS • Qg(tot) = 84nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs