N3C1 Search Results

HN3C12FU

Contextual Info: TO SH IBA N3C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL

Contextual Info: TO SHIBA TENTATIVE N3C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 -1

Contextual Info: TOSHIBA N3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 O o p MOUNTED DEVICES Q1/Q2

Contextual Info: TOSHIBA N3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 O o p MOUNTED DEVICES Q1/Q2

2SC5086

Abstract: HN3C10FE
Contextual Info: TOSHIBA N3C10FE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6pins package : ES6 p: 6 o o o p MOUNTED DEVICES

HN3C10FU

Contextual Info: TO SH IBA N3C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C1OFU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL

N3C1

Contextual Info: /Tiinü\B s s TECHNOLOGY Qua| High Efficiency Step-Down Switching Regulator Controller F€OTUR€S DCSCRIPTIOn • Dual Outputs: 3.3V and 5.0V ■ Very High Efficiency: Over 95% Possible ■ Current Mode Operation for Excellent Line and Load Transient Response