N2504 Search Results
N2504 Price and Stock
Cal-Chip Electronics CHV0603N250430GCTHVCAP0603 COG 43PF 2% 250V | 
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CHV0603N250430GCT | Digi-Reel | 4,000 | 1 | 
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Cal-Chip Electronics CHV0805N250471GCTHVCAP0805 COG 470PF 2% 250V | 
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CHV0805N250471GCT | Digi-Reel | 3,980 | 1 | 
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Cal-Chip Electronics CHV1206N250470JCTHVCAP1206 COG 47PF 5% 250V | 
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CHV1206N250470JCT | Digi-Reel | 3,140 | 1 | 
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Cal-Chip Electronics CHV0603N250470GCTHVCAP0603 COG 47PF 2% 250V | 
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CHV0603N250470GCT | Digi-Reel | 2,968 | 1 | 
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Cal-Chip Electronics CHV2220N250474KXTHVCAP2220 X7R .47UF 10% 250V | 
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CHV2220N250474KXT | Reel | 1,000 | 1,000 | 
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N2504 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Z115
Abstract: 5-12-9B 
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LDC-N2504RI LDQ-N254RI LDQ-N2504RI TA-25 lr-10O If-10mA 5-12-9B 635nm Z115 | |
MCH3460Contextual Info: MCH3460 Ordering number : ENN8111 MCH3460 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol  | 
 Original  | 
MCH3460 ENN8111 900mm2 MCH3460 | |
064 diode
Abstract: MCH3333 marking YJ AM 
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MCH3333 ENN7989 900mm2 064 diode MCH3333 marking YJ AM | |
MCH3320Contextual Info: MCH3320 Ordering number : ENN7992 MCH3320 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol  | 
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MCH3320 ENN7992 900mm2 MCH3320 | |
MCH3416Contextual Info: MCH3416 Ordering number : ENN7996 N-Channel Silicon MOSFET MCH3416 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol  | 
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MCH3416 ENN7996 900mm2 MCH3416 | |
HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4 
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MCH3360Contextual Info: MCH3360 Ordering number : ENN8109 MCH3360 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol  | 
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MCH3360 ENN8109 900mm2 MCH3360 | |
MCH3421Contextual Info: MCH3421 Ordering number : ENN7997 MCH3421 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol  | 
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MCH3421 ENN7997 900mm2 MCH3421 | |
V 2238
Abstract: V2238 81062 N2504 CPH6612 
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CPH6612 900mm2 900mm2 IT07177 IT07178 V 2238 V2238 81062 N2504 CPH6612 | |
LA6563
Abstract: HSOP36R LB-656 op829 11K23 b8555 78875 
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N7887A LA6563 LA6563CD4ch N2504 B8-5556 LB6563 LA6563 HSOP36R LB-656 op829 11K23 b8555 78875 | |
MCH3421Contextual Info: MCH3421 注文コード No. N 7 9 9 7 三洋半導体データシート N MCH3421 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。  | 
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MCH3421 900mm2 400mA 400mA, IT06002 900mm2 IT07674 IT07671 MCH3421 | |
CPH6612Contextual Info: CPH6612 Ordering number : ENN8106 N-Channel Silicon MOSFET CPH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.  | 
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CPH6612 ENN8106 900mm2 CPH6612 | |
marking WM
Abstract: MCH3360 
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MCH3360 EN8109A 900mm2 marking WM MCH3360 | |
MCH6627Contextual Info: MCH6627 Ordering number : ENN8000 MCH6627 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.  | 
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MCH6627 ENN8000 MCH6627 | |
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MARKING ZG
Abstract: MCH3431 8025-2 
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MCH3431 EN8025A PW10s, 900mm20 MARKING ZG MCH3431 8025-2 | |
MCH3321Contextual Info: MCH3321 Ordering number : ENN7993 MCH3321 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol  | 
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MCH3321 ENN7993 900mm2 MCH3321 | |
IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536 
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CPH5614Contextual Info: CPH5614 Ordering number : ENN8119 N-Channel Silicon MOSFET CPH5614 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.  | 
 Original  | 
CPH5614 ENN8119 600mm2 CPH5614 | |
MCH3431
Abstract: 8025-2 MARKING ZG 
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MCH3431 ENN8025 900mm2 MCH3431 8025-2 MARKING ZG | |
MCH3322
Abstract: Marking jx 
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MCH3322 ENN7994 900mm2 MCH3322 Marking jx | |
MCH6627
Abstract: D-0300 
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MCH6627 900mm2 IT03317 900mm2 IT04070 IT04071 MCH6627 D-0300 | |
CPH6329Contextual Info: CPH6329 Ordering number : ENN8001 CPH6329 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol  | 
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CPH6329 ENN8001 900mm2 CPH6329 | |
MCH3415Contextual Info: MCH3415 Ordering number : ENN7995 MCH3415 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol  | 
 Original  | 
MCH3415 ENN7995 900mm2 MCH3415 | |
transistor N342Contextual Info: r Numerical Index Part Number Page 100. .34 101. . 36 102. . 34 103. .34 105. .38 106. .38 107. . 39  | 
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