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    N2504 Search Results

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    Microchip Technology Inc TN2504N8-G

    MOSFET Transistor - N Channel - 890 mA - 40 V - 1 ohm - TO-243AA (SOT-89).
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    Newark TN2504N8-G Tape & Reel 2,000
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    Microchip Technology Inc TN2504N8-G Tape & Reel 8 Weeks
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    Avnet Silica TN2504N8-G 11 Weeks 2,000
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    EBV Elektronik TN2504N8-G 10 Weeks 2,000
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    TE Connectivity FN2504-32-07-C13

    FN2504-32-07-C13
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    Sager FN2504-32-07-C13 1
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    TE Connectivity FN2504-10-05-C13

    FN2504-10-05-C13
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    Abracon Corporation APAKN2504-C2G-T

    RF Antenna 1.575/1.602GHZ CER Patch
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    Newark () APAKN2504-C2G-T Cut Tape 590 1
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    APAKN2504-C2G-T Tape & Reel 590 100
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    TTI APAKN2504-C2G-T Tray 11,000 250
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    Diodes Incorporated ZXTN25040DFHTA

    Bipolar (BJT) Single Transistor, NPN, 40 V, 4 A, 1.25 W, SOT-23, Surface Mount - Tape and Reel (Alt: ZXTN25040DFHTA)
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    Avnet Americas ZXTN25040DFHTA Tape & Reel 9,000 3,000
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    Newark () ZXTN25040DFHTA Tape & Reel 520 100
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    ZXTN25040DFHTA Cut Tape 520 5
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    Bristol Electronics ZXTN25040DFHTA 217
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    Avnet Silica ZXTN25040DFHTA 46 Weeks 3,000
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    Win Source Electronics ZXTN25040DFHTA 15,000
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    N2504 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Z115

    Abstract: 5-12-9B
    Contextual Info: DATE DRAWING NUMBER L D C -N 2 5 0 4 R I REPLACES PART# LDQ-N254RI REPLACES PART# LDQ-N2504RI ELECTRO-OPTICAL CHARACTERISTICS TA - 2 5 'C PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY EMITTED COLOR; FONT COLOR l SEGMENT COLOR:


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    ldc-n2504rildq-n254rildq-n2504rita-25+5lr-10oif-10ma5-12-9b635nmz115 PDF

    MCH3460

    Contextual Info: MCH3460 Ordering number : ENN8111 MCH3460 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original
    mch3460enn8111900mm2 PDF

    064 diode

    Abstract: MCH3333 marking YJ AM
    Contextual Info: MCH3333 Ordering number : ENN7989 MCH3333 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3333enn7989900mm2064 diode+1marking yj am PDF

    MCH3320

    Contextual Info: MCH3320 Ordering number : ENN7992 MCH3320 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3320enn7992900mm2 PDF

    MCH3416

    Contextual Info: MCH3416 Ordering number : ENN7996 N-Channel Silicon MOSFET MCH3416 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3416enn7996900mm2 PDF

    HN462532G

    Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
    Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .


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    hn462532ghn462732ghn4827128g-256116alsp-15+6482732ag6116lp613128phm4816ap46116alp-10hm4816ap-4 PDF

    MCH3360

    Contextual Info: MCH3360 Ordering number : ENN8109 MCH3360 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3360enn8109900mm2 PDF

    MCH3421

    Contextual Info: MCH3421 Ordering number : ENN7997 MCH3421 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3421enn7997900mm2 PDF

    V 2238

    Abstract: V2238 81062 N2504 CPH6612
    Contextual Info: CPH6612 注文コード No. N 8 1 0 6 三洋半導体データシート N CPH6612 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。


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    cph6612900mm2it07177it07178+4v 2238v223881062n2504 PDF

    LA6563

    Abstract: HSOP36R LB-656 op829 11K23 b8555 78875
    Contextual Info: 注文コード No.N 7 8 8 7 B 半導体データシート No.N7887A をさしかえてください。 モノリシックリニア集積回路 CD 用 LA6563 4ch ブリッジ BTL ドライバ 概要 LA6563は、CD用4chブリッジ(BTL)ドライバである。


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    n7887ala6563la6563cd4chn2504+8b8-5556lb6563hsop36rlb-656op82911k23b855578875 PDF

    MCH3421

    Contextual Info: MCH3421 注文コード No. N 7 9 9 7 三洋半導体データシート N MCH3421 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


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    mch3421900mm2400mait06002+2it07674it07671 PDF

    CPH6612

    Contextual Info: CPH6612 Ordering number : ENN8106 N-Channel Silicon MOSFET CPH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    cph6612enn8106900mm2 PDF

    marking WM

    Abstract: MCH3360
    Contextual Info: MCH3360 Ordering number : EN8109A SANYO Semiconductors DATA SHEET MCH3360 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    mch3360en8109a900mm2marking wm PDF

    MCH6627

    Contextual Info: MCH6627 Ordering number : ENN8000 MCH6627 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.


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    mch6627enn8000 PDF

    MARKING ZG

    Abstract: MCH3431 8025-2
    Contextual Info: MCH3431 Ordering number : EN8025A SANYO Semiconductors DATA SHEET MCH3431 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    mch3431en8025apw10s900mm20+2marking zg8025-2 PDF

    MCH3321

    Contextual Info: MCH3321 Ordering number : ENN7993 MCH3321 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3321enn7993900mm2 PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    in2222atransitron catalogtcr43tm106+6in4431n9448sv4091in4868 diode3n68in536 PDF

    CPH5614

    Contextual Info: CPH5614 Ordering number : ENN8119 N-Channel Silicon MOSFET CPH5614 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.


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    cph5614enn8119600mm2 PDF

    MCH3431

    Abstract: 8025-2 MARKING ZG
    Contextual Info: MCH3431 Ordering number : ENN8025 MCH3431 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3431enn8025900mm28025-2+1marking zg PDF

    MCH3322

    Abstract: Marking jx
    Contextual Info: MCH3322 Ordering number : ENN7994 MCH3322 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3322enn7994900mm2marking jx PDF

    MCH6627

    Abstract: D-0300
    Contextual Info: MCH6627 注文コード No. N 8 0 0 0 三洋半導体データシート N MCH6627 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗 , 超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに


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    mch6627900mm2it03317it04070+2it04071d-0300 PDF

    CPH6329

    Contextual Info: CPH6329 Ordering number : ENN8001 CPH6329 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    cph6329enn8001900mm2 PDF

    MCH3415

    Contextual Info: MCH3415 Ordering number : ENN7995 MCH3415 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    mch3415enn7995900mm2 PDF

    transistor N342

    Contextual Info: r Numerical Index Part Number Page 100. .34 101. . 36 102. . 34 103. .34 105. .38 106. .38 107. . 39


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    transistor n342 PDF