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    onsemi

    onsemi MTW32N20N20EG

    32 AMPS, 200 VOLTS N-CHANNEL TO-247 POWER MOSFET Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE
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    ComSIT USA MTW32N20N20EG 109
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    onsemi MTW32N20EG

    Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian MTW32N20EG 6,732
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    N20EG Datasheets Context Search

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    n20eg

    Abstract: 6N20E 369D AN569 MTD6N20E 6n20eg
    Contextual Info: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching


    Original
    mtd6n20emtd6n20e/dn20eg6n20e+3369dan5696n20eg PDF

    n20eg

    Abstract: 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4
    Contextual Info: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast


    Original
    mtd6n20emtd6n20e/dn20eg6n20e+7n20ev750con semiconductor marking n20e369dan569mtd6n20e1mtd6n20et4 PDF

    Contextual Info: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching


    Original
    mtd6n20emtd6n20e/d PDF

    Contextual Info: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching


    Original
    mtd6n20emtd6n20e/d PDF