N2009 Search Results

MH12210

Abstract: panasonic date code for batteries
Contextual Info: Control number N2009-1E-002 Established date : Feb,2,2009 PT. Panasonic Gobei Energy Indonesia Revision history No. Revision Date Established 1 Feb,2,2009 2 Production site change ; [New] PT. Panasonic Gobel Energy Indonesia Indonesia [Previous] Pansonic Corporation Energy Company (Japan)

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

N2009LS

Contextual Info: N2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V • 12mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: N2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V •

N2009LS

Contextual Info: N2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 10A •     Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage 8A  Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

N2009LS

Contextual Info: N2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V

Contextual Info: N2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V

Contextual Info: 7 THIS DRAWING IS U N PU B LISH ED . COPYRIGHT - 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. A LL RIGHTS RESERVED. 0.86+0. 1 OI Gì Ò o I Ul T 4 o [.034+.004] p V w© / \ / \/ \/ : 0.6 1+0.05 — [•024+.QQ2] 4 - 0.1 5 r .0 0 6 ] 0 p

N2009LS

Abstract: DMN2009LSS DMN2009LSS-13
Contextual Info: N2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V • 12mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: ML12009/ML12011/ ML12013 DUAL MODULUS PRESCALERS LANSDALE These devices are two-modulus prescalers which w ill divide by 5 and 6, 8 and 9, and 10 and 11, respectively. A MECL-to-TTL translator is provided to interface directly with the M C I2014 Counter Control Logic.

N2009LS

Abstract: DMN2009LSS DMN2009LSS-13 J-STD-020D
Contextual Info: N2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V •

Contextual Info: N2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 8m @ VGS = 10V • 9m @ VGS = 4.5V • 12m @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed