N158MO Search Results
N158MO Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: O rdering num ber: EN 2719 _ 2 S K 1 0 6 7 N-Channel MOS Silicon FET FM Tuner,VHF-Band Amp Applications F eatu res • Low noise NF = 1.8dB typ f=100MHz • High power gain PG = 27dB typ(f= 100MHz) • Small reverse transfer capacitance crss = 0.035pF(VDS=: 10V,f=lMHz) |
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2SK1067 100MHz) 035pF 2SK1067-applied 27X9-4/4 | |
2SC3998
Abstract: 2sc3998 transistor transistor 2SC3998 IC 2732 pdf datasheet 2sC3998 horizontal output transistor PANASONIC 2SC3998 NPN Transistor 1500V 20a EN2732
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EN2732 2SC3998 100ns 2048B 2SC3998] 2SC3998 2sc3998 transistor transistor 2SC3998 IC 2732 pdf datasheet 2sC3998 horizontal output transistor PANASONIC 2SC3998 NPN Transistor 1500V 20a EN2732 | |
2SC3998
Abstract: transistor 2SC3998
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ENN2732 2SC3998 100ns 2048B 2SC3998] 2SC3998 transistor 2SC3998 | |
2sc3997Contextual Info: Ordering number:ENN2771 NPN Triple Diffused Planar Silicon Transistor 2SC3997 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). |
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ENN2771 2SC3997 100ns 2048B 2SC3997] 2sc3997 | |
2SC3998
Abstract: NPN Transistor 1500V 20a
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EN2732A 2SC3998 100ns 2SC3998 NPN Transistor 1500V 20a | |
Contextual Info: Ordering number: EN 2 7 3 2 2SC3998 No.2732 NPN Triple Diffused Planar Silicon Transistor SAiYO i Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High speed tf=100ns typ . High breakdown voltage (VCB0=1500V) . High reliability (adoption of HVP process) |
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2SC3998 100ns N158MO GQ5G372 100tiH 0D5Q373 | |
2SC4478
Abstract: EN2977
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EN2977 2SC4478 2SC4478] O-220ML 2SC4478 EN2977 | |
Contextual Info: Ordering number:EN2977 NPN Triple Diffused Planar Silicon Transistor 2SC4478 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. |
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EN2977 2SC4478 2SC4478] O-220ML | |
2SC3997
Abstract: 2sc3997 transistor
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2SC3997 100ns 2SC3997 2sc3997 transistor | |
2sc3998 transistor
Abstract: 2SC3998 ITR06226 ITR06227 ITR06228 ITR06229 silicon transistor Vcbo 800 Vceo 1000 Ic 20A transistor 2SC3998 10A800
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2SC3998 EN2732A 100ns 2sc3998 transistor 2SC3998 ITR06226 ITR06227 ITR06228 ITR06229 silicon transistor Vcbo 800 Vceo 1000 Ic 20A transistor 2SC3998 10A800 | |
2SK1067
Abstract: EN2719
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EN2719 2SK1067 2SK1067] 100MHz) 035pF 2SK1067-applied 2SK1067 EN2719 | |
2SK1067
Abstract: high power amp 100mhz 1w
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2SK1067 T-31-25 100MHz) 035pF 2SK1067-applied 100nA high power amp 100mhz 1w | |
2SC3997Contextual Info: Ordering num ber:EN 2771 No.2771 2SC3997 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High speed tf=100ns typ . High breakdown voltage (VCB0=1500V) . High reliability (adoption of HVP process) |
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2SC3997 100ns T03PBL N158MO c17G7ti QD2D370 0D2Q371 2SC3997 | |
2SC4478
Abstract: 5040MHz
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EN2977 2SC4478 2SC4478] O-220ML 2SC4478 5040MHz | |
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