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JST Manufacturing J2FSN-06V-K J2FSN-06V-K
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	J2FSN-06V-K		300		205	1 - 10 - 100 - 1000 $0.27 10000 $0.27	Buy Now
Renesas Electronics Corporation NP90N06VLK-E1-AY Transistor MOSFET N-Channel 60V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: NP90N06VLK-E1-AY)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NP90N06VLK-E1-AY	Tape & Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.90	Buy Now
Avnet Silica	NP90N06VLK-E1-AY			14 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation NP45N06VUK-E1-AY Transistor MOSFET N-CH 60V 45A 3-Pin TO-252 T/R - Tape and Reel (Alt: NP45N06VUK-E1-AY)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NP45N06VUK-E1-AY	Tape & Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.59	Buy Now
Renesas Electronics Corporation NP45N06VDK-E1-AY Transistor MOSFET N-CH 60V 45A 3-Pin TO-252 T/R - Tape and Reel (Alt: NP45N06VDK-E1-AY)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NP45N06VDK-E1-AY	Tape & Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.58	Buy Now
Avnet Silica	NP45N06VDK-E1-AY			14 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	NP45N06VDK-E1-AY		42,500			1 - 10 - 100 $1.76 1000 $1.48 10000 $1.48	Buy Now
Renesas Electronics Corporation NP90N06VLG-E1-AY NCH POWER MOSFET 60V 90A 7.8MOHM DPAK - Tape and Reel (Alt: NP90N06VLG-E1-AY)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NP90N06VLG-E1-AY	Tape & Reel		12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $1.10	Buy Now

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N06V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
t20 N06V Abstract: T20N06V Contextual Info: N06V Power Field Effect Transistor N−Channel DPAK This device is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 V devices. This device is designed to withstand high energy	Original	mtd20n06v mtd20n06v/d t20 n06v t20n06v	PDF
N06V Abstract: 15n06v n06v1 Contextual Info: N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power	Original	mtd15n06v mtd15n06v/d n06v 15n06v +1n06v1	PDF
T20N06V Abstract: t20 N06V N06V MTD20N06VT4 t20n06 Contextual Info: N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60	Original	mtd20n06v mtd20n06v/d t20n06v t20 n06v +3n06v mtd20n06vt4 t20n06	PDF
15n06v Abstract: N06V 369D AN569 MTD15N06V MTD15N06VT4 mosfet DPAK Contextual Info: N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power	Original	mtd15n06v mtd15n06v/d 15n06v n06v +4369d an569 mtd15n06vt4 mosfet dpak	PDF
T20N06V Abstract: t20 N06V t20n06 N06V T20N06V datasheet MTD20N06VT4 MTD20N06V AN569 Contextual Info: N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60	Original	mtd20n06v mtd20n06v/d t20n06v t20 n06v +5t20n06 n06v t20n06v datasheet mtd20n06vt4 an569	PDF