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    N06V Price and Stock

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    JST Manufacturing J2FSN-06V-K

    J2FSN-06V-K
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    TME J2FSN-06V-K 300 205
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    Renesas Electronics Corporation NP90N06VLK-E1-AY

    Transistor MOSFET N-Channel 60V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: NP90N06VLK-E1-AY)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NP90N06VLK-E1-AY Tape & Reel 12 Weeks 2,500
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    Mouser Electronics NP90N06VLK-E1-AY 2,500
    • 1 $3.05
    • 10 $1.52
    • 100 $1.37
    • 1000 $1.07
    • 10000 $0.99
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    Avnet Silica NP90N06VLK-E1-AY 14 Weeks 2,500
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    Renesas Electronics Corporation NP45N06VUK-E1-AY

    Transistor MOSFET N-CH 60V 45A 3-Pin TO-252 T/R - Tape and Reel (Alt: NP45N06VUK-E1-AY)
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    Avnet Americas NP45N06VUK-E1-AY Tape & Reel 12 Weeks 2,500
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    Mouser Electronics NP45N06VUK-E1-AY 1,257
    • 1 $2.32
    • 10 $1.14
    • 100 $1.00
    • 1000 $0.76
    • 10000 $0.64
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    Renesas Electronics Corporation NP45N06VDK-E1-AY

    Transistor MOSFET N-CH 60V 45A 3-Pin TO-252 T/R - Tape and Reel (Alt: NP45N06VDK-E1-AY)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NP45N06VDK-E1-AY Tape & Reel 12 Weeks 2,500
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    Mouser Electronics NP45N06VDK-E1-AY 1,896
    • 1 $2.22
    • 10 $1.08
    • 100 $0.96
    • 1000 $0.74
    • 10000 $0.64
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    Avnet Silica NP45N06VDK-E1-AY 14 Weeks 2,500
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    Win Source Electronics NP45N06VDK-E1-AY 42,500
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    • 100 $1.76
    • 1000 $1.48
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    Renesas Electronics Corporation NP90N06VLG-E1-AY

    NCH POWER MOSFET 60V 90A 7.8MOHM DPAK - Tape and Reel (Alt: NP90N06VLG-E1-AY)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NP90N06VLG-E1-AY Tape & Reel 12 Weeks 2,500
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    Mouser Electronics NP90N06VLG-E1-AY
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    Find more N06V price and stock on Findchips.com

    N06V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    t20 N06V

    Abstract: T20N06V
    Contextual Info: N06V Power Field Effect Transistor N−Channel DPAK This device is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 V devices. This device is designed to withstand high energy


    Original     		mtd20n06vmtd20n06v/dt20 n06vt20n06v PDF

    N06V

    Abstract: 15n06v n06v1
    Contextual Info: N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		mtd15n06vmtd15n06v/dn06v15n06v+1n06v1 PDF

    T20N06V

    Abstract: t20 N06V N06V MTD20N06VT4 t20n06
    Contextual Info: N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60


    Original     		mtd20n06vmtd20n06v/dt20n06vt20 n06v+3n06vmtd20n06vt4t20n06 PDF

    15n06v

    Abstract: N06V 369D AN569 MTD15N06V MTD15N06VT4 mosfet DPAK
    Contextual Info: N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		mtd15n06vmtd15n06v/d15n06vn06v+4369dan569mtd15n06vt4mosfet dpak PDF

    T20N06V

    Abstract: t20 N06V t20n06 N06V T20N06V datasheet MTD20N06VT4 MTD20N06V AN569
    Contextual Info: N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60


    Original     		mtd20n06vmtd20n06v/dt20n06vt20 n06v+5t20n06n06vt20n06v datasheetmtd20n06vt4an569 PDF