N-CHANNEL SO8 Search Results

FDS8858CZ

Abstract: fds8858
Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's

FDS8858

Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance

Contextual Info: FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using ̈ Max rDS on = 26 mΩ at VGS = 10 V, ID = 6.1 A

p channel de mosfet

Abstract: list of P channel power mosfet Si4567DY si4567
Contextual Info: Si4567DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.060 @ VGS = 10 V 5.0 0.070 @ VGS = 4.5 V 4.7 0.085 @ VGS = –10 V –4.4 0.122 @ VGS = –4.5 V –3.7

Transistor Mosfet N-Ch 30V

Abstract: STS7C4F30L
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

Si4569DY

Contextual Info: Si4569DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.027 at VGS = 10 V 6.0 0.032 at VGS = 4.5 V 4.8 0.029 at VGS = –10 V –6.0 0.039 at VGS = –4.5 V

STS7C4F30L

Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

ultrasound transducer circuit driver 1mhz

Abstract: gate-source zener TC6320 Piezoelectric 1Mhz 125OC 27BSC TC6320TG zener diode reverse breakdown voltage 4.5V P-channel MOSFET VGS -25V
Contextual Info: TC6320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC6320TG consists of a high voltage low threshold N-channel and P-channel MOSFET in an SO8 package. Both MOSFETs have integrated gate-source

S-49534

Abstract: Si4539DY
Contextual Info: Si4539DY Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) N-Channel N Channel 30 P Channel P-Channel –30 30 rDS(on) (W) ID (A) 0.037 @ VGS = 10 V "5.8 0.055 @ VGS = 4.5 V "4.7 0.053 @ VGS = –10 V "4.9 0.095 @ VGS = –4.5 V "3.6 D1 D1

Si9529DY

Contextual Info: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1

STS1C1S250

Abstract: P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V
Contextual Info: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω

MOSFET N-CH 200V

Abstract: MOSFET P-CH 250V 5A sd 150 zener diode STS1C1S250
Contextual Info: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω

ultrasound transducer circuit driver 1mhz

Abstract: TC6320 TC6320TG-G p-channel 200V Piezoelectric 1Mhz 125OC 27BSC TC6320TG gate-source zener
Contextual Info: TC6320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage low threshold N-channel and P-channel MOSFETs in an SO8 package. Both MOSFETs have integrated gate-source

list of P channel power mosfet

Abstract: si4563 SI4563DY
Contextual Info: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested

STS7C4F30L

Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V STSC4F30L
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.018Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STSC4F30L(N-Channel) STSC4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.060 Ω 70 A 70 A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

STS3C3F30L

Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

Transistor Mosfet N-Ch 30V

Abstract: P Channel STripFET STS3C3F30L P-channel N-Channel power mosfet SO-8
Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

marking s13a

Abstract: 2000-339 marking s13b LM3487
Contextual Info: LM3477 LM3477 High Efficiency High-Side N-Channel Controller for Switching Regulator Literature Number: SNVS141J LM3477 High Efficiency High-Side N-Channel Controller for Switching Regulator General Description The LM3477/A is a high-side N-channel MOSFET switching

LT3029EDE

Abstract: LT3029EMSE LTC292X
Contextual Info: LT3029 Dual 500mA/500mA Low Dropout, Low Noise, Micropower Linear Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n Output Current: 500mA per Channel Low Dropout Voltage: 300mV Low Noise: 20 VRMS 10Hz to 100kHz Low Quiescent Current: 55μA per Channel

Contextual Info: LT3029 Dual 500mA/500mA Low Dropout, Low Noise, Micropower Linear Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n Output Current: 500mA per Channel Low Dropout Voltage: 300mV Low Noise: 20 VRMS 10Hz to 100kHz Low Quiescent Current: 55μA per Channel

Contextual Info: Si4503DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel (Channel 2) 30 P-Channel (Channel 1) –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 8.8 0.027 @ VGS = 4.5 V 7.2 0.042 @ VGS = –4.5 V –4.5 0.060 @ VGS = –2.5 V

S14B MOSFET DRIVER

Abstract: lm3478 schematic SNVS085U
Contextual Info: LM3478,LM3478Q LM3478/LM3478Q High Efficiency Low-Side N-Channel Controller for Switching Regulator Literature Number: SNVS085U LM3478/LM3478Q High Efficiency Low-Side N-Channel Controller for Switching Regulator General Description Features The LM3478 is a versatile Low-Side N-Channel MOSFET