N-CHANNEL MOSFET TO-247 50A Search Results

STW54NM65N

Contextual Info: STW54NM65N N-channel 650 V, 0.054 Ω, 50 A MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID STW54NM65N 710 V < 0.065 Ω 50 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 TO-247

IXTP50n25

Abstract: IXTP*50N25T IXTP50N25T 50n25 IXTQ50N25T 50N25T IXTA50N25T ixth50n25t N-channel MOSFET to-247 50a ixtq50n25
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T VDSS ID25 = = 250V 50A Ω 50mΩ RDS on ≤ N-Channel Enhancement Mode TO-247 (IXTH) TO-263 (IXTA) G S G (TAB) D TO-220 (IXTP) G (TAB) S Symbol Test Conditions

DS100187A

Abstract: IXTV02N250S IXTH02N250 PLUS220SMD 02N250
Contextual Info: Preliminary Technical Information IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH220N075T IXTQ220N075T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings

IXTH220N075T

Abstract: IXTQ220N075T NS472
Contextual Info: Preliminary Technical Information IXTH220N075T IXTQ220N075T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings

3232I

Abstract: IXTH230N085T IXTQ230N085T
Contextual Info: Preliminary Technical Information IXTH230N085T IXTQ230N085T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings

IXTA50N25T

Abstract: IXTH50N25T ixtp50n25t IXTQ50N25T IXTP50n25 IXTP*50N25T 50N25T 50n25 DS99346B ixtq50n25
Contextual Info: Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T VDSS ID25 = = 250V 50A Ω 60mΩ RDS on ≤ N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) DS D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH230N085T IXTQ230N085T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings

Contextual Info: IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Trench Gate Power MOSFET VDSS ID25 = = 250V 50A Ω 60mΩ RDS on ≤ N-Channel Enhancement Mode TO-3P (IXTQ) TO-220AB (IXTP) TO-263 AA (IXTA) G G D S S G D (Tab) DS D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions

Contextual Info: Preliminary Technical Information IXTH280N055T IXTQ280N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 280 A Ω ≤ 3.2 mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

IXTH180N085T

Abstract: IXTQ180N085T
Contextual Info: Preliminary Technical Information IXTH180N085T IXTQ180N085T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 85 V = 180 A ≤ 5.5 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

182N055T

Abstract: T182N IXTH182N055T IXTQ182N055T ixtq182n055 182N055
Contextual Info: Preliminary Technical Information IXTH182N055T IXTQ182N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55 V = 182 A ≤ 5.0 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH250N075T IXTQ250N075T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 75 V = 250 A Ω ≤ 4.0 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 180 A Ω ≤ 6.4 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

IXTH250N075T

Abstract: IXTQ250N075T 250N075T 33na5
Contextual Info: Preliminary Technical Information IXTH250N075T IXTQ250N075T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 75 V = 250 A Ω ≤ 4.0 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

IXTH160N10T

Abstract: IXTQ160N10T
Contextual Info: Preliminary Technical Information IXTH160N10T IXTQ160N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V

200N1

Contextual Info: Preliminary Technical Information IXTH200N10T IXTQ200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MW 100 100 V V

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V

Contextual Info: TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFH230N075T2 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH182N055T IXTQ182N055T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55 V = 182 A ≤ 5.0 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C

IXFH230N075T2

Contextual Info: TrenchT2TM HiperFETTM Power MOSFET IXFH230N075T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 75 V VGSM Transient

IXTH150N17T

Abstract: 150N17T n-channel, 85v, 75a
Contextual Info: Preliminary Technical Information IXTH150N17T Power MOSFET TrenchHVTM VDSS ID25 = 175V = 150A Ω ≤ 12mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTH280N055T IXTQ280N055T RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 280A Ω ≤ 3.2mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH220N055T IXTQ220N055T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Maximum Ratings