N-CHANNEL MOS FET 4 V GATE Search Results

IC-3328

Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
Contextual Info: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The juPA1520 is N-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, m otor and lamp driver. 26.8 MAX. 4.0 FEATURES • 4 V driving is possible

TEA-1035

Abstract: IC-3345 UPA1552 UPA1552H MEI-1202 nec li ion
Contextual Info: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The juPA1552 is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance

PA1556A

Contextual Info: 1 DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR fiPA1556A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /iPA1556A is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible

2SK619

Abstract: high impedance amplifier
Contextual Info: 2SK619 '> IJ z i y N F + MOS FET SILICON N-CHANNEL MOS FET HIGH FREQUENCY AMPLIFIER HIGH IMPEDANCE AMPLIFIER 1. . K V 4 > : Drain 2. V — X : Source 3. r — h : Gate Dimensions in mm (JED EC TO-126 MOD.) ABSOLUTE MAXIMUM RATINGS {T a = § m Y V 4 • V -

uPA1556

Abstract: TEA-1035 tea1035 nec 556 pa1556 TEA1034 TEA-1034 NEC motor MEI-1202 PA1556H
Contextual Info: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1556 is N-channel Power MOS FET A rra y th a t b uilt in 4 circuits designed fo r solenoid, m oto r and lamp driver. in millimeters .4.0 FEATURES • 4 V driving is possible

PA1552AH

Abstract: PA1552 IC-3346 uPA1552A MEI-1202 TEA-1035 a1034
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1552A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The j«PA1552A is N-channel Power MOS FET A rray that b u ilt in 4 circuits designed fo r solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible

transistor CD 910

Abstract: IC-3359 MEI-1202 A1034 MOS FET Array
Contextual Info: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /xPA1570 is N-channel Power MOS FET A rra y th a t b uilt in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance

Contextual Info: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS l nl < 0.17 Q, Vos = 10 V, ID = 4 A P-channel: RDS(on) < 0.2 Q, Vos = -1 0 V, ID = -4 A • Capable of 4 V gate drive

Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on| < 0.075 Q, VGS = 10 V, ID = 4 A P-channel: RDS(im < 0.! 2 O, V GS = - 1 0 V, ID = - 4 A • Capable o f 4 V gate drive

lf7a

Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on < 0.17 SI, VGS = 10 V, ID= 4 A P-channel: RDS(,m) < 0.2 £2, VGS = -1 0 V, ID= -4 A • Capable of 4 V gate drive

4AM12

Abstract: SP-10 Hitachi DSA0046
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive

2SK2515

Abstract: IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2515 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)

nec 2sk2511

Abstract: transistor 2SK2511 2SK2511 IEI-1213 MEI-1202 MF-1134 MP-88
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2511 is N-Channel MOS Field Effect Transistor designed in millimeter for high current switching applications. RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A)

Hitachi DSA002723

Contextual Info: 6AM12 Silicon N-Channel/P-Channel Complementary Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive

2SJ173

Abstract: 2SJ176 2SK1094 2SK971 4AM12 Hitachi 2SJ Hitachi DSA00305
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, I D = –4 A • Capable of 4 V gate drive

mos n fet e

Contextual Info: DATA SHEET NEC / M O S FIELD EFFECT TRAN SISTO R _ 2 S K 1 4 8 5 N-CHANNEL MOS FET FOR SW ITCHING PACKAGE DIMENSIONS U n it : mm The 2SK1485, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output o f fCs having a 5 V

Hitachi 2SJ

Abstract: Hitachi DSA002751
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • Capable of 4 V gate drive

IC-3360

Abstract: PA1572 UPA1572H MEI-1202 PA1572H TEA-1035 MOS FET Array TEA1035
Contextual Info: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /¿PA1572 is N-channe! Power MOS FET A rray th a t b uilt in 4 circuits designed fo r solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance

Contextual Info: 4AM16 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • L ow on-resistance N Channel: RDS on>< 0.17 i i , V GS = 10 V, ID = 4 A P Channel: RDS(on < 0.2 Q , V GS = - 10 V, ID = - 4 A • High speed switching

S10ms

Abstract: 2SJ184 2SK1398 T100 T200 TC-7645A
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS U n it: mm 2.0 ± 0.2 4.0±0.2 o -H o 4 -0 .5 0 FEATURES Ft IO ö 0.45 w hich can be driven by 2.5 V power supply.

Hitachi DSA002724

Contextual Info: 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS = –10 V, I D = –2.5 A • Capable of 4 V gate drive

4AM13

Abstract: SP-10 Hitachi DSA0046
Contextual Info: 4AM13 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.4 , VGS = 10 V, I D = 1.5 A P-channel: RDS(on) ≤ 0.45 , VGS = –10 V, I D = –1.5 A • Capable of 4 V gate drive

2SK2414

Abstract: 2SK2414-Z IEI-1213 MEI-1202 MF-1134 TEA-1037 TC249
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)

d1308

Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)