N-CHANNEL FET Search Results

Contextual Info: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs

BSR56

Contextual Info: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel

PMBF4391

Abstract: PMBF4392 PMBF4393 MBK288
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification April 1995 NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect

Bft46

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

CRS15

Abstract: BFT46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

2SK1664

Contextual Info: DATA SHEET i N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1664 is N-channel M O S Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters high voltage switching applications.

2SK1285

Abstract: MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC ^N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1285 is N-channel MOS Field Effect Transistor in millimeters designed for solenoid, m otor and lamp driver.

Contextual Info: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N Channel: RDSu,n < 0 .5 £1, V os = 10 V, ID = 2 A P Channel: RDS on) < 0 .9 Vas = - 1 0 V, ID = - 2 A • Low drive current

transistor d 2389

Abstract: 2SK1290 MEI-1202 TEA-1035 TR240 iE25
Contextual Info: DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1290 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1290 is N-channel MOS Field Effect Transistor designed for in millimeters solenoid, m otor and lamp driver.

2SK1492

Abstract: MEI-1202 TEA-1035
Contextual Info: _ DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK1492 is N-channel MOS Field Effect Transistor de­ {in millimeters signed fo r high voltage switching applications.

d1711

Abstract: 2SK1285 C11531E
Contextual Info: DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX.

FDMS7700S

Abstract: 501B 8 P mosfet 9630
Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

FDMS7600AS

Abstract: 501B 8 P
Contextual Info: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

FDML7610S

Contextual Info: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

RTJC

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A

a2791

Abstract: M20S PA2791GR G1820 diode MARKING M16
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2791GR SWITCHING N- AND P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. 8 5 N-channel 1 : Source 1

PA1793

Abstract: S8150
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1793 SWITCHING N- AND P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1793 is N- and P-Channel MOS Field Effect Transistors 8 designed for Motor Drive application. 5 N-Channel 1 ; Source 1

2SK1492

Abstract: MEI-1202 TEA-1035 2sk14 TC239
Contextual Info: DATA SHEET ,y N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK1492 is N-channel M O S Field Effect Transistor de­ in millimeters signed fo r high voltage switching applications.

FDMS3604S

Abstract: 501B 8 P 231B DIODE
Contextual Info: Preliminary Datasheet FDMS3604S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 6.8 mΩ N-Channel: 30 V, 40 A, 2.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 6.8 mΩ at VGS = 10 V, ID = 13 A

j35 fet

Abstract: FET electret microphone K1109 ELECTRET CONDENSER MICROPHONE UNIT
Contextual Info: UTC K1109 N-CHANNEL JUNCTION FET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 DESCRIPTION 2 The UTC K1109 is N-channel JFET for electret condenser microphone. FEATURES 3 *High gm implies low transfer loss *Built-in gate-source diode and resistor implies fast

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

Contextual Info: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s

c151A

Abstract: FDMS3602S
Contextual Info: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A