N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40V Search Results

25n06

Abstract: 25N06 MOSFET 25n06l utc25n06 d 25n06 relay 12v 100A 25n06g
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on.

Contextual Info: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4424, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

Contextual Info: 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2604, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

marking n52

Abstract: marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking
Contextual Info: ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

SOT23-6 MARKING 310

Abstract: ZVN4525G p-channel 250V power mosfet ZVN4525GTA ZVN4525GTC ZVP4525G DSA0037391
Contextual Info: ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

marking n52

Abstract: marking N52 mosfet ZVN4525ZTA MOSFET 4420 sot223 device Marking ZVN4525Z ZVP4525G DSA0037393 device marking N52
Contextual Info: ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

5806SS

Abstract: DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S
Contextual Info: CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC5806Q8 Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8

4422 mosfet

Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
Contextual Info: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36N05 Power MOSFET 36A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION The UTC UTT36N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current

MRF138

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF138 VHP POWER MOSFET TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 N-Channel Enhancement Mode DESCRIPTION: MRF138 is a N-Channel enhancement mode MOSFET, intended for use in 28V applications up

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD454 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFET providing perfect RDS ON and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load

N-Channel 40V MOSFET

Abstract: SPN5454
Contextual Info: SPN5454 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN5454 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN5454 has been designed specifically to improve the overall

2804SS

Abstract: 2804S N-Channel MOSFET 40V 7A
Contextual Info: CYStech Electronics Corp. Spec. No. : C438Q8 Issued Date : 2009.02.11 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC2804Q8 BVDSS ID RDSON max N-CH 40V 7A 28mΩ P-CH -40V -6A 44mΩ Description The MTC2804Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8

utd454

Abstract: on47
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTD454 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTD454 is an N-channel enhancement MOSFET providing perfect RDS ON and low gate charge with UTC advanced technology. The UTC UTD454 is intended for being used in PWM, load

ISD18A

Abstract: MOSFET 500V 18A 18n50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.

SPN4526

Abstract: marking 8 SOP-8P mosfet gate source voltage 20v N-Channel 40V MOSFET
Contextual Info: SPN4526 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4526 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN4546

Abstract: 5V 2A MOSFET N-channel
Contextual Info: SPN4546 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4546 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

spn4910

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Vgs 40V mosfet N-Channel Enhancement Mode MOSFET N-Channel vgs 40V MOSFET
Contextual Info: SPN4910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4910 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

RL20 rectifier diode

Abstract: marking Td MOSFET 80A diode
Contextual Info: SPN8080 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN2318S23RGB

Abstract: SPN2318 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet
Contextual Info: SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.