N-CHANNEL 40V MOSFET Search Results

RTJC

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD8424H Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Contextual Info: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

FDD8424

Contextual Info: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

FDD8424h

Abstract: fdd8424 TO-252-4L P-CHANNEL 90A POWER MOSFET Dual N & P-Channel PowerTrench
Contextual Info: FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

fdd8424H

Abstract: fdd8424
Contextual Info: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

Mosfet 2011

Abstract: FDD8424H_F085A Dual N & P-Channel
Contextual Info: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s

list of P channel power mosfet

Abstract: Power MOSFET p-Channel n-channel dual UTM4052 40v 7.5a P-Channel N-Channel
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL „ FEATURES * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @ VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V

40v 7.5a P-Channel N-Channel

Abstract: UTM4052 TO-252-4
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL FEATURES „ SOP-8 * N-Channel: 40V/7.5A RDS(ON) = 30 mΩ (typ.) @VGS =10V RDS(ON) = 46 mΩ(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 mΩ(typ.) @ VGS= -10V

Contextual Info: STP190NF04 STB190NF04 - STB190NF04-1 N-channel 40V - 0.0039Ω - 120A - D2PAK/I2PAK/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STP190NF04 40V <0.0043Ω 120A STB190NF04 40V <0.0043Ω 120A STB190NF04-1 40V <0.0043Ω 120A •

ZXMC4A16DN8

Abstract: ZXMC4A16DN8TA ZXMC4A16DN8TC
Contextual Info: ZXMC4A16DN8 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits

MOSFET 923 54

Abstract: N06L vq3001 quad N-Channel MOSFET dip package 40v N- and P-Channel dip
Contextual Info: TQ3001 VQ3001 VQ7254 Supertax inc. N- and P-Channel Quad Power MOSFET Arrays Ordering Information vYa s th R ds (ON) (max) Q l + Q2 or Q3 + Q4 N-Channel P-Channel 14-Pin P-Dip 40V 3.0Q 2.0V -3.0V VQ3001N6 — 40V 3.o n 1.6V -2.4V — TQ3001N7 20V 3.0Q 2.0V

APM4568

Abstract: APM4568A APM4568AK N-Channel vgs 40V MOSFET pch 1275
Contextual Info: APM4568AK Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V

APM4568

Abstract: APM4568J apm*4568 36M0 P-Channel MOSFET code L 1A 40v 7.5a P-Channel N-Channel MS-001 STD-020C 40v 7.5a N- and P-Channel
Contextual Info: APM4568J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/7.5A, RDS(ON) =21mΩ (typ.) @ VGS = 10V RDS(ON) =30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -40V/-6A, RDS(ON) =36mΩ (typ.) @ VGS =-10V

p190nf04

Abstract: JESD97 STB190NF04 STB190NF04-1 STB190NF04T4 STP190NF04 95A 104 Marking
Contextual Info: STP190NF04 STB190NF04 - STB190NF04-1 N-channel 40V - 0.0039Ω - 120A - D2PAK/I2PAK/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STP190NF04 40V <0.0043Ω 120A STB190NF04 40V <0.0043Ω 120A STB190NF04-1 40V <0.0043Ω 120A •

APM4568

Abstract: apm*4568 APM4568K STD-020C
Contextual Info: APM4568K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V

12x6 lcd

Abstract: fault finding all type of lcd tv file 40V to 6V convertor step up convertor circuit diagram 48v dc to 12v dc convertor PAM2845 PAM2845KHR dc to dc voltage step up convertor 48V Switching convertor circuit power convertor dc to dc
Contextual Info: PAM2845 40V High Power Boost Convertor with 6 Channel Constant Current Source Features Description n Six Constant-Current Output Channels n Parallel Channels Allow Higher Current per LED String n Maximum 40V Continuous Voltage Output Limit for Each Channel

270N4F3

Abstract: ST 270N4f3 Part Marking TO-220 STMicroelectronics JESD97 STB270N4F3 STI270N4F3 STP270N4F3
Contextual Info: STB270N4F3 STI270N4F3 - STP270N4F3 N-channel 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N4F3 40V <2.9mΩ 120A 330W STI270N4F3 40V <2.5mΩ 160A 330W STP270N4F3 40V <2.9mΩ • 100% avalanche tested

D-PAK

Abstract: P270N04 STB270N04-1 STP270N04 B270N04 JESD97 STB270N04
Contextual Info: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W

B270N04

Abstract: JESD97 P270N04 STB270N04 STB270N04-1 STP270N04
Contextual Info: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W