N TRANSISTOR NEC K 2500 Search Results

PS2003

Abstract: PS2003B NEC photo coupler
Contextual Info: NEC PHOTO COUPLER B fC IR O N O E V K PS2003B PHOTO COUPLER -NEPOC SERIES - DESCRIPTION The PS2003B is an o p tic a lly coupled isolator containing a GaAs lig h t em ittin g diode and an NPN silicon ph oto transistor. FEATURES PACKAGE DIMENSIONS in m illim eter! in c h n

TG 2309

Abstract: NEC photo coupler
Contextual Info: DATA SHEET NEC PHOTO COUPLER PS2732 ELECTRON DEVICE HIGH ISOLATION VOLTAGE H IG H COLLECTOR TO EM ITTER VOLTAGE SO P PHOTO C O U PLER D E SC R IP T IO N P A C K A G E D IM E N S IO N S Unit: mm The PS2732 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon darlingtonconnected photo-transistor.

NEC K 2500

Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

nec optocoupler

Abstract: igbt display plasma optocouplers 3030 optocoupler 4-pin dip open collector transistor NEC 2500 PS9301 DIP4 gull wing SSOP12 NEC K 2500 PS8551
Contextual Info: N E C E l ec t r o n i c s O P TO C O U P L E RS — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include

2SC1223

Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and

2SC2150

Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise

nec 2501

Abstract: nec 2501 optocoupler 2501 optocoupler nec 2701 optocoupler 2501 2701 optocoupler NEC-2701 optocoupler 2501 dip 2501 NEC nec optocoupler
Contextual Info: California Eastern Laboratories Optocouplers Selection Guide NUMBERING SYSTEM All devices are available in lead free versions P S X X X X X — X — X — X— X Lead Finish None = Standard Finish A = Lead (Pb) Free Finish Identification number CTR Rank

transistor NEC D 586

Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise

PS8551L4

Abstract: PS2581 PS2581A NEC PS2581 PS9451 PS9317 PS9817A-1 ps9122 PS9302 ps2805c
Contextual Info: IC output optocoupler Transistor optocoupler May 2009 Introduction Based on all in-house technologies Bipolar, CMOS and Bi-CMOS NEC Electronics can offer a complete portfolio of optoisolation products. The long of experience of NEC Electronics in developing and manufacturing highest quality optoelectronic products is reflected in hundreds

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

NEC JAPAN 282 110 01

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /zPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC2709T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The /¿PC2709T is a silicon monolithic integrated circuit designed as 1st IF amplifier for DBS tuners. This IC is packaged in minimold package.

CSTCE8M00G15C

Abstract: transistor K 1413 PS2701A-1-F3 PS2801A-1 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4 PS2801A-4-F3 PS2801A-4-F4 ps2701A
Contextual Info: NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 and PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted in a plastic

CSTCE8M00G15C

Abstract: Switching diode 4 PS2801A-1 PS2801A-1-F3 PS2801A-1-F4 PS2801A-4 PS2801A-4-F3 PS2801A-4-F4
Contextual Info: NEC's HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER PS2801A-1 PS2801A-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 Vr.m.s. NEC's PS2801A-1 and PS2801A-4 is an optically coupled isolator containing a GaAs light emitting diode and a NPN silicon phototransistor. This device is mounted in a plastic

uPD4050

Abstract: PD4050 PS2806-1 PS2806-1-F3 PS2806-1-F4 PS2806-4 PS2806-4-F3 PS2806-4-F4 "AC Motor" APPLICATIONS
Contextual Info: HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER PS2806-1 PS2806-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 kVr.m.s. PS2806-1 and PS2806-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

IC ATA 2398

Abstract: ata 2398 transistor D 2395 NE33284A te 2395 TRANSISTOR low noise FET NEC U TVR 681
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The N E33284A is a Herero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for GPS,

IC/CTC 1351 transistor pin detail

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC 2 7 1 0 TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular

darlington pair transistor

Abstract: PS2501 PS2500 PS2501L PS2502 PS2505 PS2505L PS2506 ps2506-1 ps2506 equivalent
Contextual Info: Application Note PS2500-SERIES MULTI-CHANNEL PHOTOCOUPLER Document No. P11278EJ3V0AN00 3rd edition Date Published November 1997 N 1992 Printed in Japan [MEMO] 2 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the

nec a 634

Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS

transistor NEC D 822 P

Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent

TRANSISTOR BO 345

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

a 1712 8pin

Abstract: C10535E VP15-00-3
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1679G 5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter