N MOSFET Search Results

k3868

Abstract: LTC3868E LTC3868EUH LTC3868I LTC3868IUH LTC3868-1 LTC3890-1 150w mosfet audio amplifier
Contextual Info: LTC3868 Low IQ, Dual 2-Phase Synchronous Step-Down Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n The LTC 3868 is a high performance dual step-down switching regulator controller that drives all N-channel synchronous power MOSFET stages. A constant frequency

Contextual Info: LTC4354 Negative Voltage Diode-OR Controller and Monitor DESCRIPTION FEATURES n n n n n n n n n Controls N-Channel MOSFETs Replaces Power Schottky Diodes Less Than 1µs Turn-off Time Limits Peak Fault Current 80V Operation Smooth Switchover without Oscillation

STE48NM50

Contextual Info: STE48NM50 N-CHANNEL 500V - 0.08Ω - 48A ISOTOP MDmesh Power MOSFET TYPE STE48NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 48 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

STW45NM50FD

Abstract: ZVS phase-shift converters stw45nm50f
Contextual Info: STW45NM50FD N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE TYPE STW45NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

Contextual Info: SSS3N90A Advanced Power MOSFET FEATURES BVDSS = 900 V n Avalanche Rugged Technology RDS on = 6.2 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2 A n Improved Gate Charge n Extended Safe Operating Area TO-220F n Lower Leakage Current : 25 A (Max.) @ VDS = 900V

W26NM60

Abstract: Zener Diodes 300v STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

SI4544DY

Contextual Info: SÌ4544DY VI^ Y - Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N -C h a n n e l P -C h a n n e l r DS(O N) (-2) Id (A) 0 .0 3 5 @ V GS = 10 V ± 6 .5 0 .0 5 0 @ V GS = 4 .5 V

VNS3NV04D

Abstract: OMNIFET
Contextual Info: VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNS3NV04D RDS on 120 mΩ (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN

VNS1NV04D

Abstract: omnifet ii OMNIFET
Contextual Info: VNS1NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNS1NV04D RDS on 250 mΩ (*) Ilim 1.7 A (*) Vclamp 40 V (*) (*) Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN

GT3585

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and

GSS4569

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/09/20 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 40m N-CH ID 5.0A P-CH BVDSS -40V N-CH RDS(ON) 100m N-CH ID -4.4A GSS4569 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4569 provide the designer with the best combination of fast switching, ruggedized device design, low

GT2530

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

GP4565

Abstract: 40v N- and P-Channel dip
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A GP4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4565 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: Tem ic SÌ4936DY S e m i c o n d u c t o r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 30 rDS(on) (Q) I d (A) 0.037 @ VGS = 10 V ±5.8 0.055 @ VGS = 4.5 V ±4.7 u D, SO-8 IÎ 3l O u D 2 Ö2 D! >| N -C h a n n el M O S F E T G2 c ji N -C h a n n el M O S F E T

GSS4507

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 36m N-CH ID 6.0A P-CH BVDSS -30V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4507 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4507 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: Supertex inc. AN0332 8 N-Channel Latchable Power MOSFET Array Ordering Information v DD Ro ON •0(0N) *0(0FF) (max) (max) (min) (max) SO-16 Order Number/Package Die 320V 350Q 25mA -1 .OnA AN0332CG AN0332ND 'A v e r a g e c u r r e n t p e r c h a n n e l, m e a s u re d w ith a ll e ig h t c h a n n e ls c o n n e c te d in p a ra lle l.

P11NM60AFP

Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
Contextual Info: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

IRFC420

Abstract: IR51H420 IR2151 2.5v zener chip
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.057D IR51H420 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

IRF7343

Abstract: IR*343
Contextual Info: PD -91709 IRF7343 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P -C H A N N E L M O S F E T

VND1NV04

Abstract: VNN1NV04 VNS1NV04
Contextual Info: VND1NV04 / VNN1NV04 / VNS1NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND1NV04 RDS on VNN1NV04 250 mΩ Ilim Vclamp 2 1.7 A 40 V VNS1NV04 2 1 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

GSS6982

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : CH1 BVDSS 30V N-CH RDS ON 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A GSS6982 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra

Contextual Info: LTM4601AHV 12A, 28VIN DC/DC µModule Regulator with PLL, Output Tracking and Margining DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 28V 12A DC Typical, 14A Peak Output Current