N CHANNEL T MOS TRANSISTOR Search Results

2SK2723

Contextual Info: DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE P A C K A G E D IM EN SIO N S in m illim eter D E S C R IP T IO N T his product is N-Channel MOS Field Effect T ransistor designed for high current switching spplications.

k1498

Abstract: APPLICATION NOTE TEA-1035
Contextual Info: DATA SHEET T NEC , - • - MOS FIELD EFFECT POWER TRANSISTOR 2SK1497/2SK1498 à SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1497/2SK1498 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect T ra n s is to r designed PACKAGE DIMENSIONS in millimeter fo r hig h c u rre n t s w itc h in g applications,

ic nec 2501

Abstract: 2SK2483
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2483 is N-Channel MOS Field Effect T ransistor designed in millimeter for high voltage switching applications. FEATURES

2SK1285

Abstract: MEI-1202 TEA-1035
Contextual Info: N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET In d u s t r ia l u s e DESCRIPTION The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2499, 2SK2499-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2499 is N-Channel MOS Field Effect T ransistor de­ PACKAGE DIMENSIONS in m illim eters signed fo r high cu rren t sw itchin g applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2498 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK2498 is N-Channel MOS Field Effect T ra n s is to r designed fo r PACKAGE DIMENSIONS in millimeter high c u rre n t s w itc h in g a p p lica tio n s.

transistor BS170

Abstract: max 1987 BS170 kbl transistor
Contextual Info: BS170 J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low RDSon• Direct interface to C-MOS, T T L , etc.

2N6660

Abstract: 2N6659 2N6661 TP 1322 2N6661 transistor
Contextual Info: 2N 6659 2N 6660 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed fo r application as low-power, high-frequency inverters and line drivers. Features: • Direct interface to C-MOS, T T L , etc.

D1425

Abstract: 2SK3367 2SK3367-Z transistor A144
Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3367 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2982 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for high TO-251 current switching applications. FEATURES

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES

K2514

Abstract: Transistor dj rw
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2514is N-Channel MOS Field Effect T ra n s is to r designed fo r hig h c u rre n t s w itc h in g applications, FEATURES • S u p e r L o w O n-R esistance

2SK1588

Abstract: IEI-1213 MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1588 N-CHANNEL MOS FET FOR SWITCHING The 2 S K 15 88 is an N-channel vertical type MOS F E T which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS F E T is driven by low voltage and does not require con­

Contextual Info: D A TA S H E E T MOS FIELD EFFECT TRANSISTOR _ ¡1 PA1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description Package Drawing Unit : mm This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR _ 2SK3356 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3356 is N-channel MOS Field Effect Transistor PART NUM BER PACKAGE 2S K3356 T O -3 P designed for high current switching applications.

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ HPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power m anagement application of notebook com puters, and Li-ion battery application.

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ ¿¿PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. 8 5 FEATURES

2SK1283

Abstract: MEI-1202 TEA-1035
Contextual Info: DATA SHEET T im e c : P MOS FIELD EFFECT POWER TRANSISTOR 2SK1283 W SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The2SK1283 is N-channel MOS Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters solenoid, motor and lamp driver.

MFE823

Abstract: Field-Effect Transistors "Field-Effect Transistors"
Contextual Info: MFE823 silicon SILIC O N P-CHANNEL P-CHANNEL MOS F IE L D -E F F E C T T R A N SIS T O R S MOS F IE L D -E F F E C T T R A N SIS T O R S Enhancement Mode (T yp e C) MOS Field-Effect Transistors designed for use in smoke detector circuits. • Low Gate Reverse Current —

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2365/2SK2366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect T ransistor designed fo r high vo ltag e sw itching applications. PACKAGE DIMENSIONS

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS _ ¿ t P A 1 7 A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eter This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power

a1037

Abstract: uA753
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 753 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: m illim eter This product is Dual N-Channel MOS Field Ef­ fect T ransistor designed for power m anagem ent

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2409 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2409 is N-Channel MOS Field Effect T ra n sistor dé­ PACKAGE D IM E N S IO N in m illim eters signée! fo r solenoid, m otor, and lam p driver.