N CHANNEL E- MOSFET Search Results
N CHANNEL E- MOSFET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
TK5R1A08QM |
![]() |
MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS | Datasheet | ||
TK155E65Z |
![]() |
N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ | Datasheet | ||
TK090U65Z |
![]() |
MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL | Datasheet | ||
TK5R3E08QM |
![]() |
MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB | Datasheet | ||
TK065U65Z |
![]() |
MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL | Datasheet |
N CHANNEL E- MOSFET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
marking code ct
Abstract: 50s MARKING CODE
|
Original |
CMRDM3575 OT-963 125mW 200mA marking code ct 50s MARKING CODE | |
Contextual Info: CMLDM3757 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM3757 OT-563 350mW 500mA 200mA 540mA, 215mA, | |
MARKING 3C7
Abstract: CMLDM3757 TH430 CMLDM375
|
Original |
CMLDM3757 OT-563 350mW 200mA 500mA 540mA, MARKING 3C7 CMLDM3757 TH430 CMLDM375 | |
8C7 marking
Abstract: CMLDM7484 8C7 SOT
|
Original |
CMLDM7484 OT-563 350mW 100mA 8C7 marking CMLDM7484 8C7 SOT | |
CMLDM3757Contextual Info: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed |
Original |
CMLDM3757 OT-563 350mW 28-January CMLDM3757 | |
Contextual Info: CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM7585 OT-563 350mW s200mA, 28-January | |
Contextual Info: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
Original |
CMRDM3575 OT-963 125mA 100mA 200mA 12-December | |
Contextual Info: CMLDM7585 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM7585 OT-563 200mA 500mA 400mA | |
N-Channel and P-ChannelContextual Info: CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM3757 OT-563 350mW N-Channel and P-Channel | |
Contextual Info: CMLDM7585 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM7585 OT-563 350mW OT-563 200mA, | |
sot963
Abstract: SOT-963
|
Original |
CMRDM3575 OT-963 200mA sot963 SOT-963 | |
Contextual Info: CMLDM7484 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM7484 OT-563 350mW 100mA | |
Contextual Info: CTLDM7181-M832D SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode |
Original |
CTLDM7181-M832D CTLDM7181-M832D TLM832D 950mA, | |
MARKING CFK
Abstract: marking code CFK code cfk TLM832D
|
Original |
CTLDM7181-M832D CTLDM7181-M832D TLM832D 950mA, 17-February MARKING CFK marking code CFK code cfk | |
|
|||
FR4 epoxyContextual Info: CMLDM7585 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM7585 OT-563 200mA 500mA 400mA FR4 epoxy | |
8C7 marking
Abstract: CMLDM7484
|
Original |
CMLDM7484 OT-563 350mW OT-50mm2 28-July 100mA 8C7 marking CMLDM7484 | |
MARKING 3C7
Abstract: CMLDM3757
|
Original |
CMLDM3757 OT-563 350mW 500mA 200mA 540mA, 215mA, MARKING 3C7 CMLDM3757 | |
Contextual Info: CMLDM7585 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM7585 OT-563 350mW 200mA 500mA 400mA | |
8C7 marking
Abstract: CMLDM7484 8C7 SOT
|
Original |
CMLDM7484 OT-563 350mW 27-January 100mA 8C7 marking CMLDM7484 8C7 SOT | |
marking code CFK
Abstract: MARKING CFK code cfk
|
Original |
CTLDM7181-M832D TLM832D 810mA 950mA, marking code CFK MARKING CFK code cfk | |
Contextual Info: CMLDM7585 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7585 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for |
Original |
CMLDM7585 OT-563 200mA 500mA 400mA | |
marking n3Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G I N E R E E MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Part o f the G reenLine Portfolio of devices with e n e rg y conserving traits. |
OCR Scan |
MGSF1N03LT1 marking n3 | |
Contextual Info: MOTOROLA Order this document by MMBF0201NLT1/D SEMICONDUCTOR TECHNICAL DATA •W; L G r e e n i n e MMBF0201NLT1 Low rDS on Sm all-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Motorola Preferred Device N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
OCR Scan |
MMBF0201NLT1/D MMBF0201NLT1 | |
Contextual Info: CMLDM7002A CMLDM7002AG* CMLDM7002AJ w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS |
Original |
CMLDM7002A CMLDM7002AG* CMLDM7002AJ CMLDM7002A CMLDM7002AJ CMLDM7002A: CMLDM7002AJ: 200mA OT-563 |