N CHANNEL 9A 50V MOSFET Search Results

FS18SM14A

Abstract: FS18SM-14A FS18SM tl 464
Contextual Info: MITSUBISHI Neh POWER MOSFET ! FS18SM-14A HIGH-SPEED SWITCHING USE FS18SM-14A • VDSS . 700V • rDS ON (MAX) . 0.55Q. • Id . 18A

OCO-32

Contextual Info: MITSUBISHI Neh POWER MOSFET j F S 1 8 S M -9 j J HIGH-SPEED SWITCHING USE FS18SM-9 • VDSS . 450V • rDS ON (MAX) . 0.33Ì2 • I d . 18A

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

J656

Abstract: 2SJ656 p3nb90
Contextual Info: Ordering number : ENN7684 2SJ656 P-Channl Silicon MOSFET 2SJ656 General-Purpose Switching Device Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ656] 10.0 5.6

IRF130

Contextual Info: IRF130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)

Contextual Info: IRF130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 4.4 1.0 5.45 5.45 0.6 If Q w . . 500V ' V ' rDS ON (M A X ). . 0.50Í2

MOSFET 8A 900V

Contextual Info: SSFP9N90 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 900V Simple Drive Requirement ID25 = 8.0A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

IRFM350

Contextual Info: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

Contextual Info: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

luo24

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 O UTLINE DRAWING Dimensions in mm 4.5 r~ ! ! •i 1.5 j . 500V • TDS ON (MAX) .0.50Q.

055II

Abstract: FS18SM14A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS18SM-14A HIGH-SPEED SWITCHING USE FS18SM-14A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX • r 4.4 1.0 w 5.45 5.45 0.6 f= d J bd^ Q w r V d s s . 700V

5218a

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING Dimensions in mm .4.5 15.9MAX. 1.5 20.0 4' \ Of k2 0 3.2 W W 4 •’ v ^ h r " ¡[K s in - , 1 0.6 j 5.45 , _ . 4 . SAS jiJ_.'l fm . I M'i ■i. G AT E 2 D R A IN

KF9N50

Contextual Info: SEMICONDUCTOR KF9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

Contextual Info: HARRIS SEIUCOND SECTOR m SfiE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H • 43D2271 GD4Sh72 13T H H A S 2N7271U, 2N7271H 2N7271H . Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 14A, 100V, RDS<on)» 0.180Q

MOSFET 14A 400V

Contextual Info: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)

KF9N50

Abstract: kf9n50p KF9N50F
Contextual Info: SEMICONDUCTOR KF9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

kf9n25

Abstract: KF9N25D
Contextual Info: SEMICONDUCTOR KF9N25D TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters

NTE2993

Contextual Info: NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling Absolute Maximum Ratings: Drain−Source Voltage VGS = 0V, ID = 1mA , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

30ym

Contextual Info: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H 2N7271D, 2N7271R 2N7271H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 14A, 100V, RDS<on) - 0.180Q TQ-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

KHB9D0N50F1

Abstract: KHB9D0N50P1 36 W ballast KHB9D0N50F
Contextual Info: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

NTE2944

Contextual Info: NTE2944 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Static Drain–Source ON Resistance D Improved Inductive Ruggedness D Fast Switching Times D Low Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability

BUZ71

Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Contextual Info: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

12v transformer

Contextual Info: SI H A R R IS S E M I C O N D U C T O R FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features TO-204AA • 14A, 100V, RDS on = 0.180Q • Second Generation Rad Hard MOSFET Results From New Design Concepts