N 55B Search Results

Contextual Info: 2.50 + 0.80 * N/2-1 1.80 + 0.80 * (N/2-1) 0.80 * (N/2-1) f t H T T n n n 1 I L L d ^ d ^ :d _ :d _ : u : n H n n n n n n n n n n n n n n n f t l : u :d d ^ d ^ :d _ :d _ : u : u : u :d d ^ d ^ :d _ :d _ : : u :i M BTB —0 8 P —A xxx BTB —0 8 R —C xxx

MN5906

Abstract: MIL-PRF-38538 qml-38535 CDIP2-T18 GDIP1-T18 MN5906CD 50507
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED 12-10 R. M o n n i n C h a n g e s in accordance wit h N O R 5 9 62 - R 3 45-97. 97-06-17 R. M o n n i n C h a n g e s to table 99-07-16 R. M o n n i n C h a n g e s in accordance wit h N O R 5 9 62 - R 1 49-97.

MOS 4056

Abstract: 005V hc 4056
Contextual Info: rz z M l S G S -T H O M S O N HCC4054B /55B /56B HCF4054B /55B/56B LIQUID-CRYSTAL DISPLAY DRIVERS 4054B 4 -S E G M E N T D IS P L A Y D R IV E R S T R O B E D L A T C H F U N C T IO N 4055B B C D TO 7 -S E G M E N T D E C O D E R /D R IV E R , W IT H "D IS P L A Y -F R E Q U E N C Y " O U T P U T

2098-0105-54

Abstract: 1055236-1 T-4576 omni-spec cable list amp solder sleeve DSA003240
Contextual Info: Instruction Sheet 408-4937 was A.P. 20-512 SMA Straight Cable Plug Connectors Housing 12 MAY 05 Retaining Nut Dim. A Subassembly Contact TYCO PREVIOUS ELECTRONICS P/N Backup Inner Bushing Sleeve MIL P/N – M39012/55B P/N CABLE CLOSURE Dim D Dim. C Dim. B

MT6000A

Contextual Info: MARKTECH I N T E R N A T I O N A L S5E D • S TTTbSS D0QQ72b 55b ■ I1KT InGaAlP Ultra Bright LEDs PRELIMINARY FEATURES • New emission materialIndium Gallium Aluminum Phosphide InGaAlP • Ultra bright yellow and orange • Water clear lens • T -1 3/4 and 10mm package sizes

SMD marking code 55B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

290646

Abstract: 28F160C18 sr5 diode
Contextual Info: E ADVANCE INFORMATION 1.8 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F160C18 x16 n n n n n n Flexible SmartVoltage Technology  1.65 V–1.95 V Read/Program/Erase  12 V for Fast Production Programming High Performance  1.65 V–1.95 V: 90 ns Max Access

Contextual Info: Multimedia ICs Input selector switch for high definition displays BA7658AFS T h e B A 7 6 5 8 A F S is a n 1C d e s ig n e d fo r h ig h d e fin itio n d is p la y s , a n d h a s a n in te rn a l s e le c to r c irc u it fo r b r o a d b a n d R G B s ig n a ls a n d H d / V d s ig n a ls , a s y n c h ro n iz a tio n s e p a r a to r c irc u it, a n d a N U T E K s ig n a l d e te c to r c irc u it. T h is 1C

valvo handbuch rohren

Abstract: yl 1110 VALVO handbuch valvo magnetron 7090 triode rs 3060 cl Valvo Bauelemente GmbH valvo transistoren 5586 magnetron VALVO-Handbuch
Contextual Info: VALVD HANDBUCH Sende- und M ikro­ wellenröhren, Mikrowellenbauteile 1 Id W e ite re S p e z ia lrö h r e n m it d e m e n tsp re ch e n d e n Z u b e h ö r find e n Sie in den fo lg e n d e n V A L V O - H a n d b ü c h e r n : S p e z ia l-V e rs tä rk e rrö h re n

04A21

Abstract: SD-5566 55b6 cr 6224 T AM 22A 1043 5566S SD5566 ru 94v0 circuit MOLEX mxj 8A
Contextual Info: 10 3 7 „8 20 39 3 3 „6 8 3 4 .8 2 9 .4 6 3 0 „6 LO CM 2 „6 8 co co 9 .6 S 4 .2 — 4 'ST DIM. A F I n n 14 II 5 1 F I n n 14 H5 1p in F I M 7|b M 10II 1 M M »il6 M m T n 4 2 1? F I n n 14 I 5 16^ M 8II9 M l"l 12 13 IS IT n n n M M F in 1BI 3 1 f,3| »i 6

2SD425

Abstract: toshiba 2sd425 2SB556 251C 2SB55 2SB555 2SD426 3g2q
Contextual Info: ^ 'jD y N P N E M m w L W M h ^ y v x ? SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o n n m o m 2 s d 425 À 2 s d 42G U n i t i n mm m Pover A m p lifie r A p p lic a tio n s 02&OUAK. 0 2 1 .0 :*MAX. n • Irto : P C= 10 0 W 2 S D 4 2 5 ,2 S D 4 2 6 v j> t

HMC1012

Abstract: pht 094 HMC1501 HMC1512
Contextual Info: N o R a re E a r th M a g n e ts U n lik e H n 11 e ffe c t d e vice s w h ic h m a y re q u ire sa m a riu m co b a lt o r s im ila r rare e a rth ' m a g n e ts, the H M C 1501 an d H M C 1 0 1 2 c a n fu n c tio n w ith A ln ic o o r ce ra m ic ty p e m a g n e ts.

BUK9Y19-55B

Abstract: BUK9Y19-55B Rev. 02 BUK9Y19-55B,115
Contextual Info: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

BUK9Y40-55B

Abstract: 03np80
Contextual Info: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.

55b2

Contextual Info: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.

55B2

Abstract: MBL798
Contextual Info: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.

55B4

Abstract: BUK95 BUK9E06-55B
Contextual Info: BUK9E06-55B N-channel TrenchMOS FET Rev. 04 — 22 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate

55b1

Abstract: transistor 55B1
Contextual Info: BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 — 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

55b1

Abstract: transistor 55B1 BUK7E07-55B
Contextual Info: BUK7E07-55B N-channel TrenchMOS standard level FET Rev. 01 — 29 January 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has

Contextual Info: BUK9E06-55B N-channel TrenchMOS FET Rev. 01 — 15 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate

Contextual Info: BUK9E06-55B N-channel TrenchMOS FET Rev. 04 — 22 July 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate

Contextual Info: BUK7Y12-55B N-channel TrenchMOS standard level FET Rev. 03 — 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

55B3

Abstract: BUK9Y19-55B Rev. 02 BUK9Y19-55B
Contextual Info: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 — 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This