N 4007 Search Results

N4003

Abstract: n 5402 n4005 n 4002 N 5406 n4002 N5404 N5408 BY172 4003
Contextual Info: PLASTIC SILICON RECTIFIERS TYPE NUMBER MINIATURE lo/T* A /(”C) V rm (V) 1.0/75 1.0/75 1.0/75 1.0/75 1.0/75 1.0/75 1.0/75 1.0/50 50 100 200 400 600 800 1000 800 1 N 4001 1 N 4002 1 N 4003 1 N 4004 1 N 4005 1 N 4006 1 N 4007 TVP 8 (BY 127) Plastic I fsm (A)

n 4002

Contextual Info: Rectifier Diodes Ifrm s maximum value for continuous operation V rsm 3A V rrm 1 N 4001 . . . 4007 G Ifav (sin. 180; T am b = 45 °C; Rthja = 80 CC/W 1,4 A Types V 1 1 1 1 1 1 50 100 400 600 800 1000 N 4001 N 4002 N 4004 N 4005 N 4006 N 4007 G G G G G G T re t

sn 4002

Abstract: FRMS xa 4002
Contextual Info: 1N4002.4007, SN 113 V rrm I fav *FRMS"S A » , FAV~1 A 1 N 4002 1 N 4003 1 N 4004 1 N 4005 1 N 4006 1 N 4007 SN 113 100 V 200 V 400 V 600 V 800 V 1000 V 1300 V Tomb = 4 5 °C ,s in . 180 °el 1A 5A I frms Ifcl (Tamb = 45 °C) 0,8 A IfSM (Tvi = 25 °C)

1N4001

Abstract: diode 1N4001 specifications 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
Contextual Info: 1N4001 . . . 4007 Series Data Sheet 1.0 Amp MINIATURE PLASTIC SILICON RECTIFIERS Description Mechanical Dimensions JEDEC D0-41 .205 .160 1.00 Min. .080 .107 .031 typ. Features n LOW COST n DIFFUSED JUNCTION n LOW LEAKAGE n MEETS UL SPECIFICATION 94V-0 Electrical Characteristics @ 25oC.

4007g

Abstract: 1N4001G 1N4004G 1N4005G 1N4006G 1N4007G 1N4002G 1N4003G 1N400* series
Contextual Info: 1N4001G . . . 4007G Series Data Sheet 1.0 Amp GLASS PASSIVATED MINIATURE PLASTIC SILICON RECTIFIERS Description Mechanical Dimensions JEDEC D0-41 .205 .160 1.00 Min. .080 .107 .031 typ. Features n GLASS PASSIVATED DIE n DIFFUSED JUNCTION n LOW LEAKAGE n MEETS UL SPECIFICATION 94V-0

1 N 4004 semikron

Abstract: N4002G n 4002 N4001
Contextual Info: S1E » • fll3 b b 71 Q G 0 3 6 M 4 441 « S E K G SEMIKRON INC Ifav sin. 180; Tam b = 45 °C; 1,4 A Rthja Types V 50 100 400 600 800 1000 1 1 1 1 1 1 N 4001 N 4002 N 4004 N 4005 N 4006 N 4007 G G G G G G Ifcl = 130 °C; L = 10 mm; sin. 180 sin. 180; Tam b = 75 °C; Rthja = 80 °C/W

4007 IC DATASHEET mosfet

Abstract: LTC4007EGN thermistor ntc 60 0250 FDC6459 LTC4007 Si4431DY 10A PWM Charger 4007 IC mosfet ntc thermistor 10k 4007 mosfet
Contextual Info: LTC4007 4A, High Efficiency, Standalone Li-Ion Battery Charger FEATURES n n n n n n n n n n n n n DESCRIPTION Complete Charger Controller for 3- or 4-Cell Lithium-Ion Batteries High Conversion Efficiency: Up to 96% Output Currents Exceeding 4A ±0.8% Charging Voltage Accuracy

LTC-07

Abstract: APPLICATION OF IC 4007 4007 mosfet SI4431DY
Contextual Info: LTC4007 4A, High Efficiency, Standalone Li-Ion Battery Charger FEATURES n n n n n n n n n n n n n DESCRIPTION Complete Charger Controller for 3- or 4-Cell Lithium-Ion Batteries High Conversion Efficiency: Up to 96% Output Currents Exceeding 4A ±0.8% Charging Voltage Accuracy

IC 4007

Contextual Info: LTC4007 4A, High Efficiency, Standalone Li-Ion Battery Charger FEATURES n n n n n n n n n n n n n DESCRIPTION Complete Charger Controller for 3- or 4-Cell Lithium-Ion Batteries High Conversion Efficiency: Up to 96% Output Currents Exceeding 4A ±0.8% Charging Voltage Accuracy

THOMSON-CSF CCD

Abstract: peltier effect element peltier power supply Thomson-CSF amplifier Peltier element TH7888AVRHRB BG38 Thomson-CSF B10 Cree optics peltier cooler
Contextual Info: TH7888A AREA ARRAY CCD IMAGE SENSOR 1024 x 1024 PIXELS WITH ANTIBLOOMING n n n n n n n n n n n 1024 x 1024 pixels with memory zone Up to 30 images / second Built-in antiblooming device providing an electronic shutter function. Pixel : 14 mm x 14 mm Image zone : 14,34 x 14,34 mm²

Thomson-CSF B10

Abstract: peltier effect element TH78
Contextual Info: TH7888A AREA ARRAY CCD IMAGE SENSOR 1024 x 1024 PIXELS WITH ANTIBLOOMING n n n n n n n n n n n 1024 x 1024 pixels with memory zone Up to 30 images / second Built-in antiblooming device providing an electronic shutter function. Pixel : 14 mm x 14 mm Image zone : 14,34 x 14,34 mm²

D836A

Abstract: k1606 B948A K 1833 N6015 D856A K753 K379 K749A b941a
Contextual Info: Maintenance Types • M aintenance Types • M O S LSIs T y p e No. A lte r n a tiv e _ M N 158455 - M N 40174B /S A lt e r n a t i v e _ M N 1204B - M N 158481 — M N 40175B /S _ M N 50003 M N 1215P - M N 158482 - M N 4018B/S _ M N 50007 M N 1215 - MN 158483

2SC4007

Contextual Info: h "7 2SC4007 /T r a n s is to r s 2SC 4007 Triple Diffused Planar NPN Silicon Transistor Freq. Power Amp. • f tf f iv f iiH / D im e n s io n s Unit : mm 1 ) V c E ( s a t ) * ' ' ^ 'o V c E (s a t)= 0 3 V (T y p .) ( lc /lB = 2 A /0 .2 A ) 2) hFE n r t 'S o

Contextual Info: 531-40070 NOTES: 1. MATERIALS AND F I N I S H E S : BODY CONTACT SPRING C L I P INSULATOR 2. DRAW ING - BRASS BeCu BeCu PTFE TH PROJ. <§ > D E S C R 1P T I O N A B T I N PLATED GOL D P L A T E D T I N PLATED c RELEASE REVISED SEE S H EE T I.A.W. DATE TO MFG.

Contextual Info: Data sheet • Conductor connectors Modular terminal blocks with tension clamp connection ZDK 2.5/3AN NEW The new ZDK 2.5/3AN means that We i d m ü l l e r c a n n o w o ff e r a m o d u l a r terminal block which, with its six c o n n e c t i o n s a n d t w o c ro s s - c o n n e c t i o n

Contextual Info: Data sheet • Conductor connectors Modular terminal blocks with tension clamp connection ZDK 2.5/3AN NEW The new ZDK 2.5/3AN means that We i d m ü l l e r c a n n o w o ff e r a m o d u l a r terminal block which, with its six c o n n e c t i o n s a n d t w o c ro s s - c o n n e c t i o n

CMOS 4000B series device

Abstract: 4007UB 4007ubdc P311G 4000B Dual N P-Channel
Contextual Info: 4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER DE S C R IP TIO N — The 4 00 7U B is a Dual C o m plem entary Pair and an Inverter w ith access to each device. It has three n-channel and three p-channel enhancem ent m ode MOS transistors. For proper ope ratio n V g s < V-j < ^ D D -

BYY91

Abstract: BYY88 BYY92 BYY90 BYY32 BY154 BYY31 byy34 BYY35 BYY36
Contextual Info: Silicon Rectifiers S ilic o n R e c tifie rs nom. current 0,5 A and 1 A in epoxy packages Type M axim um Ratings Code JEDEC Code ITT Peak repetitive reverse current V rrl 1N 2070 — 1 N 4001 1 N 4002 1 N 4003 _ EM EM EM EM EM EM EM 1 N 4004 1 N 4005 1 N 4006

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

cd4007 application

Abstract: CD4007 RCA-CD4007 complementary pairs cd4007a
Contextual Info: CMOS LOGIC CIRCUITS TYPES TF4007A, TP4007A DUAL COMPLEMENTARY PAIRS PLUS INVERTERS !> L P T tM tíE R 1975 J OR N D U A L IN - L IN E P A C K A G E T O P V IE W Designed to be Interchangeable w ith RCA CD 4007A I schematic T J i i n i r m 1SN oION T i n i r

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

220v ac to 3.7v dc converter

Abstract: in4004 motorola diode 230V AC to 3V DC rec 12V 300w inverter power supply IRF830 APPLICATION 29-YF ballast 80W H7C1 transformer 300W HI FI AMPLIFIER input 220V AC output 3,3V AC RC circuit
Contextual Info: LIN Doc #; 1562 L X 1 5 6 2 /1 5 6 3 M i t T he I n f i n i t e is I I I P o w e r î of I k () \ I I ( S S e c o n d n n o v a t i o n P - G P o w e r r o d u c t i o n D e n e r a t i o n DESCRIPTION The LX1562 is a second-generation family o f pow er factor correction

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

Contextual Info: R e v is e d J a n u a ry 199 9 EMICQNDUCTGR tm General Description F o r p ro p e r o p e ra tio n th e v o lta g e s a t all p in s m u s t be c o n ­ s tra in e d to be b e tw e e n V Ss - 0 -3 V a n d V DD + 0 .3 V a t all T h e C D 4 0 0 7 C c o n s is ts o f th re e c o m p le m e n ta ry p a irs o f Nan d P -c h a n n e l e n h a n c e m e n t m o d e M O S tra n s is to rs s u it­