N 1210 TRANSISTOR Search Results

Contextual Info: V N 1206 V N 1210 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B Vdss I Order Number / Package ^DS O N *D(0N> BV dgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L VN1206D 120 V 1 0 ÌÌ

Contextual Info: □ï SUPERTEX INC 1 7 07732^5 DOOlbSÖ h V N 1206 V N 1210 r- -if-os’ N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L

varistor 222

Abstract: harris varistor V14MLA0603 V14MLA0805 V14MLA0805L V14MLA1206 V9MLA0603 V14MLA0805 T
Contextual Info: ML Series S E M I C O N D U C T O R Multilayer Surface Mount Transient Voltage Surge Suppressors April 1997 Features Description • Leadless 0603, 0805, 1206 and 1210 Chip Sizes The ML Series is a family of Transient Voltage Surge Suppression devices based on the Harris Multilayer

Contextual Info: >ki>jxiyki 19-1210; Rev 0 :3 /9 7 +3.3 V, 6 2 2 M b p s , S DH/ SONET 1:8 D e s e r i a l i z e r w i t h TTL O u t p u t s Features The M A X 3 68 0 d e s e ria liz e r is id e a l fo r c o n v e rtin g 6 22 M b ps serial d a ta to 8 -b it-w id e , 7 7M bp s parallel

TPC8401

Contextual Info: TOSHIBA TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SOP-8 •

Contextual Info: T O SH IB A TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U -M O SII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8

Tlp832

Contextual Info: TOSHIBA TLP832 TOSHIBA PHOTO INTERRUPTER INFRARED LED + PHOTO TRANSISTOR TLP832 HOME ELECTRONICS EQUIPMENT SUCH AS VCRS AND CD PLAYERS OA EQUIPMENT SUCH AS COPIERS, PRINTERS, AND FACSIMILES AUTOMATIC SERVICING EQUIPMENT SUCH AS COMMODITY AND TICKET VENDING MACHINES

Contextual Info: TO SH IBA 2SA1245 TOSHIBA TRANSISTOR 2 S SILICON PNP EPITAXIAL PLANAR TYPE A 1 2 4 5 HIGH FREQUENCY AMPLIFIER AND SWITCHING APPLICATIONS U n it in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC SYMBOL RATING

Contextual Info: TOSHIBA TPS604 TOSHIBA PHOTOTRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS604 PHOTO TRANSISTOR FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • TO-18 m etal package • High sensitivity. • Sharp directivity. Incident light can be effectively used.

2SK302

Contextual Info: TO SH IBA 2SK302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK302 Unit in mm FM TUNER, VHF RF AMPLIFIER APPLICATIONS • • • • Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Gpg = 28dB (Typ.) 5-15V Low Reverse Transfer Capacitance Low Noise Figure

TLP91

Abstract: TLP910
Contextual Info: TLP910 T O SH IB A TENTATIVE TLP91 0 TOSHIBA PHOTO REFLECTIVE SENSOR GaAs LED + PHOTO TRANSISTOR PHOTO-REFLECTIVE SENSOR FOR SURFACE MOUNT FOR REFLOW SOLDERING USE ONLY DETECTION OF VCR REEL ROTATION TIMING DETECTION FOR ELECTRONIC PRINTERS AND TYPEWRITERS

Contextual Info: TOSHIBA SSM3K03FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K03FE HIGH SPEED SWITCH APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 • 2.5 V Gate Drive • High Input Impedance • Low Gate Threshold Voltage •

S3V 05

Abstract: S3V 03
Contextual Info: TO SH IBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS + 0.2 2 .9 -0 .3 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage Gate2-Drain Voltage Gatel-Source Voltage

Contextual Info: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

MRF372

Abstract: MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010
Contextual Info: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

part marking information vishay HD 1

Abstract: l1a marking MRF372R5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

R10B

Contextual Info: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

Contextual Info: TO SH IBA 2SK710 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK710 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 4 .2 M A X AUDIO FREQUENCY AMPLIFIER APPLICATIONS — • High |Yfs| : |Yfs| = 25 mb Typ.

R4A marking

Contextual Info: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

marking c14a

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

marking c14a

Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

CJB99

Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 RF Reference Design Library RF Power Field Effect Transistor MRF21120R6 UMTS N - Channel Enhancement - Mode Lateral MOSFET

transistor smd d9d

Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
Contextual Info: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to

Contextual Info: ZV Series — Low Voltage SMD Varistors Description The ZV Series of low voltage varistors is designed to protect sensitive electronics devices against high voltage surges in the low voltage region. They offer excellent transient energy absorption due to improved energy volume distribution and power dissipation. Low voltage