N 10 Q Search Results
N 10 Q Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SL60N10Q
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SLKOR | N-Channel Power MOSFET, VDS 100V, ID 60A, RDS(ON) < 11.5mΩ at VGS=10V, < 15mΩ at VGS=4.5V, DFN5x6 package. | Original | ||||
SL65N10Q
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SLKOR | Original |
N 10 Q Price and Stock
TE Connectivity TRD23N10QC04SWITCH ROCKER DPDT 3A 125V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TRD23N10QC04 | Bulk | 375 | 1 |
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TRD23N10QC04 | Bag | 32 Weeks | 400 |
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TRD23N10QC04 | Bulk | 400 |
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TRD23N10QC04 | Each | 175 | 5 |
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TRD23N10QC04 | 2 | 1 |
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TRD23N10QC04 |
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TRD23N10QC04 | 375 | 1 |
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Goford Semiconductor GT045N10QMOSFET N-CH 100V 145A 208W TO-24 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT045N10Q | Tube | 49 | 1 |
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Goford Semiconductor GT016N10QMOSFET N-CH 100V 228A TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT016N10Q | Tube | 25 | 1 |
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Goford Semiconductor GT035N10QMOSFET N-CH 100V 190A TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT035N10Q | Tube | 17 | 1 |
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Goford Semiconductor GT023N10QMOSFET N-CH 100V 226A 250W TO-2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT023N10Q | Tube | 9 | 1 |
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N 10 Q Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: QWL - accessories protection caps 10- 101046 - , 10 - 101531 -( ) plug protective covers 10 - 10 10 4 o : r r . I 0 - 10 I 5 3 I 10 - 101063 -( ), 10 - 101048 - receptacle protective covers 30 6 OOO QWL - accessories protection caps A ll d im e n s io n s f o r re fe re n c e o n ly . |
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3c500 | |
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Contextual Info: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION |
OCR Scan |
B10N07/K10N07FM VNP10N07FI/VNV10N07 O-263 VNB10N07, VNK10N07FM, VNP10N07FI VNV10N07 Vertical10N07FI-VNV10N07 PowerSO-10 | |
2N5434
Abstract: 2N5432 2N5433
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OCR Scan |
2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432/543 S-52424-- 14-Apr-97 2N5434 | |
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Contextual Info: 2 E £T X N 2 £ 0 O I0 -N 3 N O ISS IA ddd N d llld M Add in O H lI M d lV C K 0 V S V S °H i f M 12/10/10, A S 0/ddV o r o i’d V1V0VM VTH 'ON "DMO 12/10/10’ A9 Q/)IH3 12/10/10A9 NMvaa 00-05215-OS b , " >IH3^ 330333 N0I5IA33 (8EEEH 313 &3I S33NV33301 3V33N33 |
OCR Scan |
12/10/10A9 00-05215-OS N0I5IA33 S33NV33301 3V33N33 30NVH 333NIS N33M133 S30133NN03 330HI | |
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Contextual Info: LTC1663 10-Bit Rail-to-Rail Micropower DAC with 2-Wire Interface DESCRIPTION FEATURES n n n n n n n n n n n n Micropower 10-Bit DAC in SOT-23 Low Operating Current: 60µA Ultralow Power Shutdown Mode: 10µA 2-Wire Serial Interface Compatible with SMBus Selectable Internal Reference or Ratiometric to |
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LTC1663 10-Bit OT-23 75LSB OT-23 LTC1661 LTC1669 | |
7408 DIP
Abstract: 7404 inverter 7400 DIP 7404 dip 7408 7402 nand 7404 hex inverter 7404 7408 and T7430
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7404 dip
Abstract: 7493 4 bit binary counter 4 nand dip 16 74122 Retriggerable Monostable Multivibrator Noise immunity of 7408 7476 counter CI 7405 Noise immunity of 7486 decade counter 7492 7492 binary counter
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OCR Scan |
P4/5484 16-bit Divide-by-12 7404 dip 7493 4 bit binary counter 4 nand dip 16 74122 Retriggerable Monostable Multivibrator Noise immunity of 7408 7476 counter CI 7405 Noise immunity of 7486 decade counter 7492 7492 binary counter | |
CL10aContextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics Samsung P/N : CL10A106KQ8NNNE Product : Multi-layer Ceramic Capacitor Description : CAP, 10㎌, 6.3V, ±10%, X5R, 0603 A. Samsung Part Number ① Series CL 10 A 106 K Q 8 N N N E ① ② ③ |
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CL10A106KQ8NNNE 12/-0hrs 48/-0hrs 10sec. CL10a | |
PLL520-38
Abstract: PLL520-38OC PLL520-38OC-R PLL520-38QC PLL520-38QC-R PLL520-39 PLL520-39OC PLL520-39OC-R PLL520-39QC
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PLL520-38/-39 65-130MHz 65MHz 130MHz 65MHz 130MHz PLL520-38) PLL520-39) 16-Pin 520-3x PLL520-38 PLL520-38OC PLL520-38OC-R PLL520-38QC PLL520-38QC-R PLL520-39 PLL520-39OC PLL520-39OC-R PLL520-39QC | |
ANSI X3.263-1995 standard
Abstract: ANSI X3.263-1995 ANSI X3.263-1995 tests MDIO clause 22 simple circuit diagram of electronic choke RF REMOTE CONTROLLER 1/3 phase common mode choke 2 port 10/100 ethernet PHY transceiver RMII AM79C874 design 100BASE-FX
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Am79C875 10/100-TX/FX 10/100BASE-TX 10BASE-T ANSI X3.263-1995 standard ANSI X3.263-1995 ANSI X3.263-1995 tests MDIO clause 22 simple circuit diagram of electronic choke RF REMOTE CONTROLLER 1/3 phase common mode choke 2 port 10/100 ethernet PHY transceiver RMII AM79C874 design 100BASE-FX | |
SP377A
Abstract: SP337 SP337A SP387A
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OCR Scan |
SP337A SP377A SP387A 180/u SP337 | |
AES17
Abstract: TAS5086 TAS5152 TAS5152DKD TAS5152DKDR TAS5508 TAS5518
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TAS5152 SLES127 36-Pin 140-mW AES17 TAS5086 TAS5152 TAS5152DKD TAS5152DKDR TAS5508 TAS5518 | |
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Contextual Info: FQD13N10L / FQU13N10L N-Channel QFET MOSFET 100 V, 10 A, 180 mΩ Description Features This N-Channel enhancement mode power MOSFET • 10 A, 100 V, RDS on = 180 mΩ (Max.) @ VGS = 10 V, is produced using Fairchild Semiconductor’s proprietary ID = 5.0 A |
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FQD13N10L FQU13N10L | |
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Contextual Info: TAS5152 www.ti.com SLES127 − FEBRUARY 2005 TM STEREO DIGITAL AMPLIFIER POWER STAGE FEATURES D 2x125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE D 4×35 W at 10% THD+N Into 4-W SE |
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TAS5152 SLES127 36-Pin TAS5508) TAS5152. | |
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827LPR200MContextual Info: IC 7 ^ ^ UCTR0LYTICCA« 85 C * H'9h Current . Snap Mount . n n r B F LPR* LUG Capacitance Range: 100 Mfd to 22,000 Mfd Voltage Range: 10 WVDC to 450 WVDC Capacitance Tolerance: ± 2 0 % (M Standard ± 10% (K) Optional -10% , + 30% (Q) Optional Leakage Current: |
OCR Scan |
159LUG025M 229LPR010M 229LPR016M 478LPR025M 478LUG 478LPR035M 827LPR200M | |
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Contextual Info: LTC2242-10 10-Bit, 250Msps ADC FEATURES n n n n n n n n n n n n n n DESCRIPTION Sample Rate: 250Msps 60.5dB SNR 78dB SFDR 1.2GHz Full Power Bandwidth S/H Single 2.5V Supply Low Power Dissipation: 740mW LVDS, CMOS, or Demultiplexed CMOS Outputs Selectable Input Ranges: ±0.5V or ±1V |
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LTC2242-10 10-Bit, 250Msps 250Msps 740mW 250Msps: LTC2242-12 12-Bit) 10-Bit) | |
MARK NA5Contextual Info: LTC2241-10 10-Bit, 210Msps ADC FEATURES n n n n n n n n n n n n n n DESCRIPTION Sample Rate: 210Msps 60.5dB SNR 78dB SFDR 1.2GHz Full Power Bandwidth S/H Single 2.5V Supply Low Power Dissipation: 585mW LVDS, CMOS, or Demultiplexed CMOS Outputs Selectable Input Ranges: ±0.5V or ±1V |
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LTC2241-10 10-Bit, 210Msps 210Msps 585mW 250Msps: LTC2242-12 12-Bit) LTC2242-10 10-Bit) MARK NA5 | |
SP301A
Abstract: SP631A SP300A
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OCR Scan |
SP300A SP301A SP631A SP300A SP301A/631A /631A | |
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Contextual Info: LTC2240-10 10-Bit, 170Msps ADC FEATURES n n n n n n n n n n n n n n DESCRIPTION Sample Rate: 170Msps 60.6dB SNR 80dB SFDR 1.2GHz Full Power Bandwidth S/H Single 2.5V Supply Low Power Dissipation: 445mW LVDS, CMOS, or Demultiplexed CMOS Outputs Selectable Input Ranges: ±0.5V or ±1V |
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LTC2240-10 10-Bit, 170Msps 170Msps 445mW 250Msps: LTC2242-12 12-Bit) LTC2242-10 10-Bit) | |
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Contextual Info: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power ̈ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A |
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FDD8426H | |
BCM53125
Abstract: BCM57780 MT7530 RTL8153 RTL8370 RTL8111F QCA9558 RTL8376 AR8151 RTL8368S
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MSD57xx MSD489 MT7525 TS21C GST5009 G1PM109RN GST5009B MT7511 BCM53125 BCM57780 MT7530 RTL8153 RTL8370 RTL8111F QCA9558 RTL8376 AR8151 RTL8368S | |
2N5432
Abstract: TO206AC
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OCR Scan |
2N5432/5433/5434 2N5432 2N5433 2N5434 2N5432/5433/5434 P-37407--Rev. 2N5432 2N5433 TO206AC | |
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Contextual Info: FQB10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS on = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe |
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FQB10N50CF | |
BGM1043
Abstract: GLOBAL NAVIGATION 3000 BGM1043N7 LNA bluetooth lte tranceiver 1800MHz
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BGM1043N7 M120319 AN283, BGM1043N7 AN283 BGM1043 GLOBAL NAVIGATION 3000 LNA bluetooth lte tranceiver 1800MHz | |