MX66L Search Results

MX66L

Contextual Info: PRELIMINARY MX66L1G45G MX66L1G45G DATASHEET PRELIMINARY MX66L1G45G Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

MX66L512

Abstract: MX66L51235F MX66L51235FZ2 MX66L MX66L51235FMI-10G PM1832 MX66L51235FXDI-10G 027000H MX66L51235 11N12
Contextual Info: MX66L51235F MX66L51235F DATASHEET P/N: PM1832 MX66L51235F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

Contextual Info: MX66L51235F MX66L51235F DATASHEET P/N: PM1832 MX66L51235F Contents 1. FEATURES. 4 2. GENERAL DESCRIPTION. 6

Contextual Info: IY IJV MX66V2000 Low Power/Voltage 512k x 8 CMOS SRAM FEATURES S DESCRIPTION Wide operation voltage 2.4V ~ 5.5V a Low power consumption Vcc=3.0V 20mA Max. write current 2mA (Max.) read current luA (Typ.) CMOS standby current Vcc=5.0V 30mA (Max.) write current

TR321

Contextual Info: m MX66V2000 A Low Power/Voltage 512k x 8 CMOS SRAM FEATURES DESCRIPTION QJ Wide operation voltage 2.4V ~ 5.5V O Low power consumption Vcc=3.0V 20mA Max. write current 2mA (Max.) read current luA (Typ.) CMOS standby cuirent Vcc=5.0V 30mA (Max.) write current

Contextual Info: MX66X2000 lY I J V Extra Low Power 512k x 8 CMOS SRAM FEATURES DESCRIPTION S The MX66X2000 is a high performance, extra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a extra low range of supply voltage. Advanced CMOS technology and circuit techniques

Contextual Info: mA MX66U2000 Very Low Power 512k x 8 CMOS SRAM FEATURES □J Very low operation voltage 1.8V QJ Very low power consumption 1OmA Max. write current 1mA (Max.) read current luA (Typ.) CMOS standby current □ High speed access time 150ns (Max.) GJ Input levels are CMOS-compatible

MX66L

Contextual Info: m MX66X2000 A Extra Low Power 512kx 8 CMOS SRAM FEATURES DESCRIPTION Q Extra low operation voltage The MX66X2000 is a high performance, extra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a extra low range of supply voltage.