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    MW504 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MW504
    		Micronetics Wireless VCO FOR WLL HANDSET APPLICATIONS Original PDF 31.62KB 1
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    NIDEC Components ST-5EMW504

    TRIMMER 500-500KOHM 0.25W GW TOP
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    Trimmer Resistors - SMD 500 KW 6mm SMD multi turn Gull wing, top adj.
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    MW504 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MW504

    Abstract: MW500 Power 33
    Contextual Info: MW504 VCOS FOR WLL HANDSET APPLICATIONS SPECIFICATIONS Frequency Range: 2400 MHz @ 0.5V 2500 MHz @ 2.5V Tuning Sensitivity: <1.5:1 MHz/V Supply Voltage: +3V Phase Noise: @10 kHz: ≤-97 dBc/Hz @100 kHz: ≤-117 dBc/Hz Supply Current: <20 mA Harmonic Suppression:


    Original     		MW504 MW500 Power 33 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		TIM3742-4L MW50430196 3742-4L PDF

    TIM3742-16L

    Contextual Info: TOSHIBA TIM3742-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    Original     		TIM3742-16L 2-16G1B) MW50470196 TIM3742-16L PDF

    TIM4450-4

    Abstract: TPM4450-4
    Contextual Info: TOSHIBA TIM4450-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4450-4 2-11D1B) MW50490196 TPM4450-4 TIM4450-4 PDF

    TIM1415-8

    Contextual Info: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1415-8 2-11C1B) MW50410196 TIM1415-8 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -44 d B c at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		TIM3742-16L TIM3742-161Power MW50470196 TIM3742-16L PDF

    TIM3742-16

    Abstract: TPM3742-16
    Contextual Info: TOSHIBA TIM3742-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM3742-16 2-16G1B) MW50460196 TPM3742-16 TIM3742-16 PDF

    TPM3742-8

    Abstract: TIM3742-8
    Contextual Info: TOSHIBA TIM3742-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 10.0 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM3742-8 2-11D1B) MW50440196 TPM3742-8 TIM3742-8 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		TIM3742-30L 95GHz MW50480196 TIM3742-30L PDF

    ip 4056

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM4450-4 MW50490196 TPM4450-4 ip 4056 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1415-4 MW50400196 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM3742-16 MW50460196 TPM3742-16 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		TIM3742-8L MW50450196 3742-8L PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 10.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM3742-4 MW50420196 TPM3742-4 PDF

    JE 33

    Contextual Info: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		TIM1415-8 2-11C1B) MW50410196 JE 33 PDF

    TIM3742-8L

    Contextual Info: TOSHIBA TIM3742-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain


    Original     		TIM3742-8L 2-11D1B) MW50450196 TIM3742-8L PDF

    TPM3742-4

    Abstract: TIM3742-4
    Contextual Info: TOSHIBA TIM3742-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 10.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM3742-4 2-11D1B) MW50420196 TPM3742-4 TIM3742-4 PDF

    TIM1415-4

    Contextual Info: TOSHIBA TIM1415-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		TIM1415-4 MW50400196 TIM1415-4 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 10.0 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM3742-8 MW50440196 TPM3742-8 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		TIM3742-16L MW50470196 TCH725G 223SQ TIM3742-16L GG22351 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level •H ig h power - P idB = 36 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		TIM3742-4L 95GHz MW50430196 TIM3742-4L DG223bl PDF

    TIM3742-30L

    Contextual Info: TOSHIBA TIM3742-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 3.7 GHz to 4.2 GHz


    Original     		TIM3742-30L 2-16G1B) MW50480196 TIM3742-30L PDF

    TIM3742-4L

    Contextual Info: TOSHIBA TIM3742-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz • High gain


    Original     		TIM3742-4L 2-11D1B) MW50430196 TIM3742-4L PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - PidB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain


    OCR Scan     		TIM3742-8L MW50450196 TIM3742-8L TGT72S0 00223LL PDF