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    MW504 Datasheets (1)

    Micronetics Wireless
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MW504
    		Micronetics Wireless VCO FOR WLL HANDSET APPLICATIONS Original PDF 31.62KB 1
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    MW504 Price and Stock

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    NIDEC Components ST-5EMW504

    - Rail/Tube (Alt: ST-5EMW504)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ST-5EMW504 Tube 15 Weeks 50
    • 1 -
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    • 100 $2.95
    • 1000 $2.79
    • 10000 $2.73
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    SMC Corporation of America MY1MW50-400

    CYLINDER, SLIDE BEARING GUIDE TYPE, SLIDE TABLE, MY1 SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS MY1MW50-400 Bulk 5 Weeks 1
    • 1 $1166.62
    • 10 $1166.62
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    SMC Corporation of America MY1MW50-400L

    CYLINDER, SLIDE BEARING GUIDE TYPE, SLIDE TABLE, MY1 SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS MY1MW50-400L Bulk 5 Weeks 1
    • 1 $1424.05
    • 10 $1424.05
    • 100 $1424.05
    • 1000 $1424.05
    • 10000 $1424.05
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    MW504 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MW504

    Abstract: MW500 Power 33
    Contextual Info: MW504 VCOS FOR WLL HANDSET APPLICATIONS SPECIFICATIONS Frequency Range: 2400 MHz @ 0.5V 2500 MHz @ 2.5V Tuning Sensitivity: <1.5:1 MHz/V Supply Voltage: +3V Phase Noise: @10 kHz: ≤-97 dBc/Hz @100 kHz: ≤-117 dBc/Hz Supply Current: <20 mA Harmonic Suppression:


    Original     		mw504mw500power 33 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		tim3742-4lmw504301963742-4l PDF

    TIM3742-16L

    Contextual Info: TOSHIBA TIM3742-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    Original     		tim3742-16l2-16g1bmw50470196 PDF

    TIM4450-4

    Abstract: TPM4450-4
    Contextual Info: TOSHIBA TIM4450-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package


    Original     		tim4450-42-11d1bmw50490196tpm4450-4 PDF

    TIM1415-8

    Contextual Info: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		tim1415-82-11c1bmw50410196 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -44 d B c at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		tim3742-16ltim3742-161powermw50470196 PDF

    TIM3742-16

    Abstract: TPM3742-16
    Contextual Info: TOSHIBA TIM3742-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		tim3742-162-16g1bmw50460196tpm3742-16 PDF

    TPM3742-8

    Abstract: TIM3742-8
    Contextual Info: TOSHIBA TIM3742-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 10.0 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		tim3742-82-11d1bmw50440196tpm3742-8 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		tim3742-30l95ghzmw50480196 PDF

    ip 4056

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		tim4450-4mw50490196tpm4450-4ip 4056 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		tim1415-4mw50400196 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		tim3742-16mw50460196tpm3742-16 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		tim3742-8lmw504501963742-8l PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 10.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		tim3742-4mw50420196tpm3742-4 PDF

    JE 33

    Contextual Info: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		tim1415-82-11c1bmw50410196je 33 PDF

    TIM3742-8L

    Contextual Info: TOSHIBA TIM3742-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain


    Original     		tim3742-8l2-11d1bmw50450196 PDF

    TPM3742-4

    Abstract: TIM3742-4
    Contextual Info: TOSHIBA TIM3742-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 10.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		tim3742-42-11d1bmw50420196tpm3742-4 PDF

    TIM1415-4

    Contextual Info: TOSHIBA TIM1415-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package


    Original     		tim1415-4mw50400196 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 10.0 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		tim3742-8mw50440196tpm3742-8 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		tim3742-16lmw50470196tch725g223sq+1gg22351 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level •H ig h power - P idB = 36 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		tim3742-4l95ghzmw50430196dg223bl PDF

    TIM3742-30L

    Contextual Info: TOSHIBA TIM3742-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 3.7 GHz to 4.2 GHz


    Original     		tim3742-30l2-16g1bmw50480196 PDF

    TIM3742-4L

    Contextual Info: TOSHIBA TIM3742-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz • High gain


    Original     		tim3742-4l2-11d1bmw50430196 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - PidB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain


    OCR Scan     		tim3742-8lmw50450196tgt72s000223ll PDF