MW50300196 Search Results
MW50300196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM1414-5Contextual Info: TOSHIBA TIM1414-5 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package |
Original |
TIM1414-5 MW50300196 Tim1414-5 | |
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB =37.5 dBm at 14.0 GHz to14.5 GHz • High gain - G 1dB =6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package |
OCR Scan |
TIM1414-5 MW50300196 |