MW50250196 Search Results
MW50250196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM1213-8LContextual Info: TOSHIBA TIM1213-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz |
Original |
TIM1213-8L 2-11C1A) MW50250196 TIM1213-8L | |
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - ldB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1213-8 2-11C1A) MW50250196 TCH725G G2231S TDT7250 TIM1213-8L | |
|
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz |
OCR Scan |
TIM1213-8L 2-11C1A) MW50250196 |