MULTICHIP BAUELEMENTE Search Results

MMDT3946

Contextual Info: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. SOT-363 FEATURE A E Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching

SMUN5211DW

Abstract: Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363
Contextual Info: SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are

npn3904

Abstract: NPN-3904 pnp3906 3906 PNP MMDT3946 3904 TRANSISTOR npn sot transistor 3906
Contextual Info: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. FEATURE SOT-363 Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching

Contextual Info: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product Dual General Purpose Transistor SOT-363 The MMDT3946 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6

MMDT2227

Abstract: PNP2907 NPN2222A 1N914 PNP2907A MMDT2227 equivalent multichip bauelemente
Contextual Info: MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features o .055 1.40 .047(1.20) Power dissipation .026TYP (0.65TYP) PCM : 0.2 W (Tamp.= 25 C) O .021REF (0.525)REF Collector current ICM : 0.2/-0.2 A

Contextual Info: MMST3946 Multi-Chip Transistors NPN+PNP Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product FEATURES * * * * * * SOT-563 hFE, 100-300 Low VCE sat , 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead-Free Solder Plating

UMD2N

Abstract: Digital Transistor npn-pnp CHIP TRANSISTOR transistor DTC124E npn-pnp symbol d2 transistor NPN/PNP transistor DTA124E
Contextual Info: UMD2N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) Features .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA124E and DTC124E transistors are built-in a SOT-363 package.

Contextual Info: BC847PN NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.2 W (Tamp.= 25 C)

BC847PN

Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
Contextual Info: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C

Contextual Info: MMDT847 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) * Features o 8 o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation .053(1.35) .045(1.15) .096(2.45) .085(2.15) PCM : 0.3 W (Temp.= 25 C)

BC847S

Abstract: SC70-6
Contextual Info: BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)

MMDT2907A

Contextual Info: MMDT2907A PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 A suffix of "-C" specifies halogen-free * Features .055 1.40 .047(1.20) o .026TYP (0.65TYP) 8 o .021REF (0.525)REF Power dissipation PCM : 0.15 W (Tamp.= 25 C)

UMH15N

Abstract: DTC144T transistor H15 marking H15 multi emitter transistor 003 SOT363
Contextual Info: UMH15N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) Features * Two DTC144T chips in a package o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent, eliminating interference.

MMDT2222A

Abstract: 1N914
Contextual Info: MMDT2222A NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) 8 o .021REF (0.525)REF Power dissipation O Collector current : 0.6 A C1 B2 .018(0.46) .010(0.26) E2 .014(0.35) .006(0.15)

MMDT5401

Abstract: MMDT5551
Contextual Info: MMDT5401 Plastic-Encapsulate Multi-Chip PNP+PNP Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features .021REF (0.525)REF * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) C2 B1

MMDT4401

Contextual Info: MMDT4401 NPN Plastic-Encapsulate Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product * Features SOT-363 .055 1.40 .047(1.20) : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : 0.6 A C2 Collector-Base vVoltage B1 E1 .014(0.35) .006(0.15) .006(0.15)

MMDT4403

Abstract: transistor EB 525
Contextual Info: MMDT4403 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : - 0.6 A C2 Collector -base voltage

BC857S

Contextual Info: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)

UMH9N

Contextual Info: UMH9N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features * Transistor elements are independent, eliminating interference. .018(0.46)

UMH11N

Abstract: marking h11 H11 sot-363 DTC114E
Contextual Info: UMH11N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 Features .055 1.40 .047(1.20) * Mounting possible with UMT3 automatic mounting machines. o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent,

Contextual Info: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C) O ICM .053(1.35 .045(1.15 .096(2.45)

Contextual Info: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46) .010(0.26) : - 0.2 A C2 Collector -base voltage

MMDT3904

Contextual Info: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C)

MMDT3906

Abstract: transistor Vbe 1 Vbe 40 transistor
Contextual Info: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46)