MTTF TEST DATA Search Results

MTTF

Abstract: VC-706 failure rate VC70 VC706
Contextual Info: VC-706 PECL FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following

VCC6

Abstract: MTTF MTTF test data
Contextual Info: VCC6 PECL FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following

VCC1

Abstract: MTTF MTTF test data
Contextual Info: VCC1 SERIES FITS RATE AND MTTF LONG-TERM FAILURE RATES Using the previous cumulative ceramic oscillators life test data, the failure rates in FITs failure in billion device-hours of operation and Mean Time To Failures (MTTF) at both 60% and 90% confidence levels are depicted in the following

Hp 2564

Abstract: DOD-HDBK-1686
Contextual Info: warn H E W L E T T miCM P A C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Reliability Data HPMX-3002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the relevant MIL-STD-883 or HP inter­

XLO8

Abstract: diode hp 5082-2080 hp 5082-2830 DOD-HDBK-1686A DOD-HDBK-1686 hp 5082-2900 diode
Contextual Info: WhoI H EW L E T T 1 "KM PA CK A R D Tri Metal Beam Lead Schottky Diodes Reliability Data HSCH-5300 Series HSCH-5500 Series Conclusion Hewlett-Packard’s beam lead diodes have successfully passed stringent environmental testing. Hewlett-Packard beam lead diodes may be used in military

MTTF

Contextual Info: CMOS Phase Locked Loop Reliability Data HPLL-8001 Description The following cumulative test results have been obtained from testing performed for HewlettPackard Communication Semiconductor Solutions Division in accordance with the latest revi- sion of MIL-STD-883. Data was

MTTF

Abstract: AT-3XXXX wk 3 25 transistor DOD-HDBK-1686
Contextual Info: NPN Silicon Bipolar Transistor Reliability Data AT-3XXXX Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the

mosfet mttf

Abstract: MRF6VP11KH MRF6VP11KHR6 tuo-4 AN1955 T491X226K035AT capacitor mttf FAIR-RITE 2743021447 EKME MCCFR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical

HPMX-3002

Abstract: M2003 M2015
Contextual Info: Silicon Bipolar RFIC 900 MHz Driver Amplifier Reliability Data HPMX-3002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the relevant MIL-STD-883 or HP internal GSS methods. Data was

MTTF

Abstract: MTTF test data ina series
Contextual Info: Silicon Bipolar Monolithic Amplifier Reliability Data INA Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the

Contextual Info: NPN Silicon Bipolar Transistor Reliability Data AT-3XXXX Series Description The following cumulative test results have been obtained from testing performed at Agilent Technologies in accordance with the latest revision of MIL-STD-883. Data was gathered from the

Contextual Info: Low Noise Gallium Arsenide FET Reliability Data ATF-10XXX ATF-13XXX Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the

I 6506

Abstract: 5091-8326E HRS108
Contextual Info: Silicon Bipolar Monilithic Amplifiers Reliability Data MSA Series Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the

HFBr reliability

Abstract: HFBR-1521 MIL-STD-690 HFBR-2521 MTTF HFBR-0501 HFBR-15xx
Contextual Info: Agilent HFBR-0501 Series Versatile Link Plastic Fiber Optic Transmitter and Receiver Reliability Data Sheet Transmitters: HFBR-1521, 1522, 1524, 1531, 1532 Receivers: HFBR-2521, 2522, 2524, 2531, 2532 Introduction Agilent Technologies’ quality system includes an ongoing

Hp 2564

Abstract: M-1004 INA-51063 INA-52063 M2003 Hp+2564
Contextual Info: Low Noise Silicon MMIC Amplifiers Reliability Data INA-51063 INA-52063 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability

JESD22-A114A

Abstract: HPMX-5001 JESD22-A114-A
Contextual Info: HPMX-5001, HPMX-5002 Integrated Circuits Reliability Data HPMX-5001 HPMX-5002 Description The following cumulative test results have been obtained from testing performed at HewlettPackard. Data was gathered from the product qualification, reliability monitor, and engineering

250GX-0300-55-22

Abstract: CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT
Contextual Info: Document Number: MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical

MCCFR0W4J0102A50

Abstract: MRF6VP11KH mccfr0w4j CPF32 MRF6VP11KHR6 MRF6VP11KGSR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 8, 9/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial,

AT-41511

Abstract: AT-41533
Contextual Info: NPN Silicon Bipolar Transistor Reliability Data AT-41511 AT-41533 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability

Contextual Info: HPMX-2006, HPMX-2007 Integrated Circuits Reliability Data HPMX-2006 HPMX-2007 Description The following cumulative test results have been obtained from testing performed at HewlettPackard Company. Data was gathered from the product qualification, reliability monitor,

MTTF

Abstract: AT-41511
Contextual Info: NPN Silicon Bipolar Transistor Reliability Data AT-4xxxx The following cumulative test results have been obtained from testing performed at Agilent Technologies in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability

Contextual Info: NPN Silicon Bipolar Transistor Reliability Data AT-41511 AT-41533 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability

IAM-8XXXX

Abstract: MTTF
Contextual Info: Silicon Bipolar Active Mixer Reliability Data IAM-8XXXX Description The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical